Molecular beam epitaxy of stoichiometric tin–telluride thin films

Kaito Tsuboi*, Nan Su, Shotaro Kobayashi, Kota Sugimoto, Masakazu Kobayashi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Tin–telluride (SnTe) thin films were grown on (0 0 1)-oriented GaAs substrates using molecular beam epitaxy. Samples were grown with various molecular beam intensity ratios at substrate temperatures of 225 °C and 240 °C. The crystallinity of the SnTe thin films was studied using X-ray diffraction θ–2θ measurements. Stoichiometric SnTe layers were achieved by tuning both molecular beam intensity ratio and substrate temperature. It was also found that the excess Te remained in films when the molecular beam intensity ratio was Te rich. The (1 1 1)-oriented domain was confirmed when the substrate temperature was 240 °C. Continuous film formation was confirmed from cross-sectional transmission electron microscopy (TEM) observation. The segregation of Te for certain samples were also confirmed from the TEM energy dispersive x-ray mapping.

Original languageEnglish
Article number126805
JournalJournal of Crystal Growth
Volume597
DOIs
Publication statusPublished - 2022 Nov 1

Keywords

  • A1. Interfaces
  • A1. X-ray diffraction
  • A1. transmission electron microscopy
  • A3. Molecular beam epitaxy
  • B1. Tellurides
  • B2. Topological crystalline insulators

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'Molecular beam epitaxy of stoichiometric tin–telluride thin films'. Together they form a unique fingerprint.

Cite this