Molecular dynamics simulation of heat transport in silicon fin structures

T. Zushi, T. Watanabe, K. Ohmori, K. Yamada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A series of molecular dynamics (MD) simulations has been conducted to investigate the transport process of heat from a heat source consisting only longitudinal optical (LO) phonon in Bulk and SOI Fin structures. The calculation results show that the heat transport from the Fin to the Si substrate is delayed when the buried oxide (BOX) layer exists even if the thickness is only one atomic layer. The kinetic energy distributions of LO and longitudinal acoustic (LA) phonons in SOI Fin structures are extracted from the MD simulations, and the result suggests that the heat transport process is impeded since acoustic phonon stays near the SiO2/Si interface. That is, the retarded heat is an unavoidable in a SOI Fin, a nanowire, or any channel structure confined in an insulating material. Having a heat duct in a device can be effective to avoid the self-heating problem for advanced transistor structures.

Original languageEnglish
Title of host publicationInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages59-62
Number of pages4
ISBN (Electronic)9780615717562
Publication statusPublished - 2012
Event2012 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 - Denver, United States
Duration: 2012 Sep 52012 Sep 7

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference2012 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012
CountryUnited States
CityDenver
Period12/9/512/9/7

Keywords

  • Fin stuructures
  • Molecular dynamics simulations
  • Nanowires
  • Phonons
  • Self-heating effect
  • SOI

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

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