Molecular dynamics simulation of heat transport in silicon nano-structures covered with oxide films

Tomofumi Zushi, Yoshinari Kamakura, Kenji Taniguchi, Iwao Ohdomari, Takanobu Watanabe

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We perform a series of molecular dynamics (MD) simulations to investigate the heat transport in Si nano-structures, while explicitly including oxide cover layers in the simulation system for the first time. The dependences of thermal diffusion velocity on the thicknesses of the SiO2 film and Si lattice are investigated. The results show that thermal diffusion velocity decreases with Si lattice thickness and does not depend on SiO2 film thickness.

Original languageEnglish
Article number04DN08
JournalJapanese journal of applied physics
Volume49
Issue number4 PART 2
DOIs
Publication statusPublished - 2010 Apr 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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