Molecular dynamics simulation of heat transport in silicon nano-structures covered with oxide films

Tomofumi Zushi, Yoshinari Kamakura, Kenji Taniguchi, Iwao Ohdomari, Takanobu Watanabe

    Research output: Contribution to journalArticle

    8 Citations (Scopus)

    Abstract

    We perform a series of molecular dynamics (MD) simulations to investigate the heat transport in Si nano-structures, while explicitly including oxide cover layers in the simulation system for the first time. The dependences of thermal diffusion velocity on the thicknesses of the SiO2 film and Si lattice are investigated. The results show that thermal diffusion velocity decreases with Si lattice thickness and does not depend on SiO2 film thickness.

    Original languageEnglish
    Article number04DN08
    JournalJapanese Journal of Applied Physics
    Volume49
    Issue number4 PART 2
    DOIs
    Publication statusPublished - 2010 Apr

    Fingerprint

    Thermal diffusion
    thermal diffusion
    Oxide films
    oxide films
    Molecular dynamics
    molecular dynamics
    heat
    Silicon
    systems simulation
    Computer simulation
    silicon
    Film thickness
    film thickness
    simulation
    Oxides
    oxides
    Hot Temperature

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Molecular dynamics simulation of heat transport in silicon nano-structures covered with oxide films. / Zushi, Tomofumi; Kamakura, Yoshinari; Taniguchi, Kenji; Ohdomari, Iwao; Watanabe, Takanobu.

    In: Japanese Journal of Applied Physics, Vol. 49, No. 4 PART 2, 04DN08, 04.2010.

    Research output: Contribution to journalArticle

    Zushi, Tomofumi ; Kamakura, Yoshinari ; Taniguchi, Kenji ; Ohdomari, Iwao ; Watanabe, Takanobu. / Molecular dynamics simulation of heat transport in silicon nano-structures covered with oxide films. In: Japanese Journal of Applied Physics. 2010 ; Vol. 49, No. 4 PART 2.
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