Molecular dynamics simulation on LO phonon mode decay in Si nano-structure covered with oxide films

T. Zushi; I. Ohdomari; T. Watanabe; Y. Kamakura; K. Taniguchi

doi:10.1109/SISPAD.2010.5604568

Molecular dynamics simulation on LO phonon mode decay in Si nano-structure covered with oxide films

T. Zushi^*, I. Ohdomari, T. Watanabe, Y. Kamakura, K. Taniguchi

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A series of molecular dynamics (MD) simulations is conducted to investigate the dynamics of longitudinal optical (LO) phonon in Si nano-structure confined with oxide films. This work is motivated by heat issues in nanoscopic devices; it is considered that the LO phonons with low group velocity are accumulated in the nanoscopic device and the electric property deteriorates. We estimate the relaxation time of the LO phonon and investigate its dependency on the oxide thickness. The calculation results show that the LO phonon decays faster as the oxide thickness increases and turns into acoustic phonon. The result indicates that the presence of SiO₂ films promotes the scattering of the phonon and this is effective to diminish the optical phonon.

Original language	English
Title of host publication	15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010
Pages	73-76
Number of pages	4
DOIs	https://doi.org/10.1109/SISPAD.2010.5604568
Publication status	Published - 2010
Event	15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010 - Bologna, Italy Duration: 2010 Sept 6 → 2010 Sept 8

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference	15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010
Country/Territory	Italy
City	Bologna
Period	10/9/6 → 10/9/8

ASJC Scopus subject areas

Electrical and Electronic Engineering
Computer Science Applications
Modelling and Simulation

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10.1109/SISPAD.2010.5604568

Cite this

Zushi, T., Ohdomari, I., Watanabe, T., Kamakura, Y., & Taniguchi, K. (2010). Molecular dynamics simulation on LO phonon mode decay in Si nano-structure covered with oxide films. In 15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010 (pp. 73-76). [5604568] (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). https://doi.org/10.1109/SISPAD.2010.5604568

Molecular dynamics simulation on LO phonon mode decay in Si nano-structure covered with oxide films. / Zushi, T.; Ohdomari, I.; Watanabe, T. et al.

15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010. 2010. p. 73-76 5604568 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zushi, T, Ohdomari, I, Watanabe, T, Kamakura, Y & Taniguchi, K 2010, Molecular dynamics simulation on LO phonon mode decay in Si nano-structure covered with oxide films. in 15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010., 5604568, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, pp. 73-76, 15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010, Bologna, Italy, 10/9/6. https://doi.org/10.1109/SISPAD.2010.5604568

Zushi T, Ohdomari I, Watanabe T, Kamakura Y, Taniguchi K. Molecular dynamics simulation on LO phonon mode decay in Si nano-structure covered with oxide films. In 15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010. 2010. p. 73-76. 5604568. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). doi: 10.1109/SISPAD.2010.5604568

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title = "Molecular dynamics simulation on LO phonon mode decay in Si nano-structure covered with oxide films",

abstract = "A series of molecular dynamics (MD) simulations is conducted to investigate the dynamics of longitudinal optical (LO) phonon in Si nano-structure confined with oxide films. This work is motivated by heat issues in nanoscopic devices; it is considered that the LO phonons with low group velocity are accumulated in the nanoscopic device and the electric property deteriorates. We estimate the relaxation time of the LO phonon and investigate its dependency on the oxide thickness. The calculation results show that the LO phonon decays faster as the oxide thickness increases and turns into acoustic phonon. The result indicates that the presence of SiO2 films promotes the scattering of the phonon and this is effective to diminish the optical phonon.",

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T1 - Molecular dynamics simulation on LO phonon mode decay in Si nano-structure covered with oxide films

AU - Zushi, T.

AU - Ohdomari, I.

AU - Watanabe, T.

AU - Kamakura, Y.

AU - Taniguchi, K.

PY - 2010

Y1 - 2010

N2 - A series of molecular dynamics (MD) simulations is conducted to investigate the dynamics of longitudinal optical (LO) phonon in Si nano-structure confined with oxide films. This work is motivated by heat issues in nanoscopic devices; it is considered that the LO phonons with low group velocity are accumulated in the nanoscopic device and the electric property deteriorates. We estimate the relaxation time of the LO phonon and investigate its dependency on the oxide thickness. The calculation results show that the LO phonon decays faster as the oxide thickness increases and turns into acoustic phonon. The result indicates that the presence of SiO2 films promotes the scattering of the phonon and this is effective to diminish the optical phonon.

AB - A series of molecular dynamics (MD) simulations is conducted to investigate the dynamics of longitudinal optical (LO) phonon in Si nano-structure confined with oxide films. This work is motivated by heat issues in nanoscopic devices; it is considered that the LO phonons with low group velocity are accumulated in the nanoscopic device and the electric property deteriorates. We estimate the relaxation time of the LO phonon and investigate its dependency on the oxide thickness. The calculation results show that the LO phonon decays faster as the oxide thickness increases and turns into acoustic phonon. The result indicates that the presence of SiO2 films promotes the scattering of the phonon and this is effective to diminish the optical phonon.

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Molecular dynamics simulation on LO phonon mode decay in Si nano-structure covered with oxide films

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