Molecular dynamics simulation on LO phonon mode decay in Si nano-structure covered with oxide films

T. Zushi, I. Ohdomari, T. Watanabe, Y. Kamakura, K. Taniguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A series of molecular dynamics (MD) simulations is conducted to investigate the dynamics of longitudinal optical (LO) phonon in Si nano-structure confined with oxide films. This work is motivated by heat issues in nanoscopic devices; it is considered that the LO phonons with low group velocity are accumulated in the nanoscopic device and the electric property deteriorates. We estimate the relaxation time of the LO phonon and investigate its dependency on the oxide thickness. The calculation results show that the LO phonon decays faster as the oxide thickness increases and turns into acoustic phonon. The result indicates that the presence of SiO2 films promotes the scattering of the phonon and this is effective to diminish the optical phonon.

Original languageEnglish
Title of host publication15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010
Pages73-76
Number of pages4
DOIs
Publication statusPublished - 2010 Dec 6
Event15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010 - Bologna, Italy
Duration: 2010 Sep 62010 Sep 8

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010
CountryItaly
CityBologna
Period10/9/610/9/8

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

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    Zushi, T., Ohdomari, I., Watanabe, T., Kamakura, Y., & Taniguchi, K. (2010). Molecular dynamics simulation on LO phonon mode decay in Si nano-structure covered with oxide films. In 15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010 (pp. 73-76). [5604568] (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). https://doi.org/10.1109/SISPAD.2010.5604568