Molecular dynamics simulation on LO phonon mode decay in Si nano-structure covered with oxide films

T. Zushi, I. Ohdomari, Takanobu Watanabe, Y. Kamakura, K. Taniguchi

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    A series of molecular dynamics (MD) simulations is conducted to investigate the dynamics of longitudinal optical (LO) phonon in Si nano-structure confined with oxide films. This work is motivated by heat issues in nanoscopic devices; it is considered that the LO phonons with low group velocity are accumulated in the nanoscopic device and the electric property deteriorates. We estimate the relaxation time of the LO phonon and investigate its dependency on the oxide thickness. The calculation results show that the LO phonon decays faster as the oxide thickness increases and turns into acoustic phonon. The result indicates that the presence of SiO2 films promotes the scattering of the phonon and this is effective to diminish the optical phonon.

    Original languageEnglish
    Title of host publicationInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
    Pages73-76
    Number of pages4
    DOIs
    Publication statusPublished - 2010
    Event15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010 - Bologna
    Duration: 2010 Sep 62010 Sep 8

    Other

    Other15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010
    CityBologna
    Period10/9/610/9/8

    Fingerprint

    Phonon
    Nanostructures
    Molecular Dynamics Simulation
    Oxide films
    Oxides
    Molecular dynamics
    Decay
    Computer simulation
    Phonons
    Relaxation time
    Electric properties
    Acoustics
    Scattering
    Group Velocity
    SiO2
    Relaxation Time
    Heat
    Series
    Estimate
    Hot Temperature

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Computer Science Applications
    • Modelling and Simulation

    Cite this

    Zushi, T., Ohdomari, I., Watanabe, T., Kamakura, Y., & Taniguchi, K. (2010). Molecular dynamics simulation on LO phonon mode decay in Si nano-structure covered with oxide films. In International Conference on Simulation of Semiconductor Processes and Devices, SISPAD (pp. 73-76). [5604568] https://doi.org/10.1109/SISPAD.2010.5604568

    Molecular dynamics simulation on LO phonon mode decay in Si nano-structure covered with oxide films. / Zushi, T.; Ohdomari, I.; Watanabe, Takanobu; Kamakura, Y.; Taniguchi, K.

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. 2010. p. 73-76 5604568.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Zushi, T, Ohdomari, I, Watanabe, T, Kamakura, Y & Taniguchi, K 2010, Molecular dynamics simulation on LO phonon mode decay in Si nano-structure covered with oxide films. in International Conference on Simulation of Semiconductor Processes and Devices, SISPAD., 5604568, pp. 73-76, 15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010, Bologna, 10/9/6. https://doi.org/10.1109/SISPAD.2010.5604568
    Zushi T, Ohdomari I, Watanabe T, Kamakura Y, Taniguchi K. Molecular dynamics simulation on LO phonon mode decay in Si nano-structure covered with oxide films. In International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. 2010. p. 73-76. 5604568 https://doi.org/10.1109/SISPAD.2010.5604568
    Zushi, T. ; Ohdomari, I. ; Watanabe, Takanobu ; Kamakura, Y. ; Taniguchi, K. / Molecular dynamics simulation on LO phonon mode decay in Si nano-structure covered with oxide films. International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. 2010. pp. 73-76
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    AU - Taniguchi, K.

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