Molecular dynamics simulations for a nickel metal with an edge dislocation and some impurities

Takayuki Sakai*, Hideyuki Murakami, Hiroshi Harada

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Examination of dislocation behavior in the level of atomic scale is one of effective approaches for understanding inelastic deformation behavior of engineering materials. In this study, a molecular dynamics code incorporated with a modified EAM (MEAM) potential proposed by Baskes was developed to investigate the dislocation behavior in nickel alloys. As verification of the code, molecular dynamics simulations for a nickel metal containing with an edge dislocation and an impurity element were carried out. Consequently, it was shown that the dislocation behavior had some temperature dependences in terms of dislocation velocity and Peiers stress. Then, it was demonstrated that the edge dislocation was made transferred under the influence of some kinds of element that seemed to be effective for solid-solution strengthening of nickel alloys. Therefore, it was proved that the MEAM potential was effective for at least qualitative evaluation of dislocation behavior.

Original languageEnglish
Title of host publicationProceedings of Asian Simulation Conference; System Simulation and Scientific Computing (Shanghai)
EditorsC. Zongij, F. Minrui, H. Guosen, P. Xiaoyuan, X. Guangleng, C. Zongji, F. Minrui, H. Guosen, P. Xiaoyuan, X. Guangleng
Pages239-243
Number of pages5
Publication statusPublished - 2002
Externally publishedYes
EventProceedings of Asian Simulation Conference/the 5th International Conference on: System Simulation and Scientific Computing (Shanghai) - Shanghai, China
Duration: 2002 Nov 32002 Nov 6

Publication series

NameProceedings of Asian Simulation Conference; System Simulation and Scientific Computing (Shanghai)

Other

OtherProceedings of Asian Simulation Conference/the 5th International Conference on: System Simulation and Scientific Computing (Shanghai)
Country/TerritoryChina
CityShanghai
Period02/11/302/11/6

ASJC Scopus subject areas

  • Modelling and Simulation

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