Monolayer MoSe2 grown by chemical vapor deposition for fast photodetection

Yung Huang Chang, Wenjing Zhang, Yihan Zhu, Yu Han, Jiang Pu, Jan Kai Chang, Wei Ting Hsu, Jing Kai Huang, Chang Lung Hsu, Ming Hui Chiu, Taishi Takenobu, Henan Li, Chih I. Wu, Wen Hao Chang, Andrew Thye Shen Wee, Lain Jong Li

    Research output: Contribution to journalArticle

    268 Citations (Scopus)

    Abstract

    Monolayer molybdenum disulfide (MoS2) has become a promising building block in optoelectronics for its high photosensitivity. However, sulfur vacancies and other defects significantly affect the electrical and optoelectronic properties of monolayer MoS2 devices. Here, highly crystalline molybdenum diselenide (MoSe2) monolayers have been successfully synthesized by the chemical vapor deposition (CVD) method. Low-temperature photoluminescence comparison for MoS2 and MoSe 2 monolayers reveals that the MoSe2 monolayer shows a much weaker bound exciton peak; hence, the phototransistor based on MoSe2 presents a much faster response time (<25 ms) than the corresponding 30 s for the CVD MoS2 monolayer at room temperature in ambient conditions. The images obtained from transmission electron microscopy indicate that the MoSe exhibits fewer defects than MoS2. This work provides the fundamental understanding for the differences in optoelectronic behaviors between MoSe2 and MoS2 and is useful for guiding future designs in 2D material-based optoelectronic devices.

    Original languageEnglish
    Pages (from-to)8582-8590
    Number of pages9
    JournalACS Nano
    Volume8
    Issue number8
    DOIs
    Publication statusPublished - 2014

    Fingerprint

    Chemical vapor deposition
    Monolayers
    vapor deposition
    molybdenum disulfides
    phototransistors
    Optoelectronic devices
    photosensitivity
    defects
    optoelectronic devices
    molybdenum
    sulfur
    electrical properties
    excitons
    photoluminescence
    transmission electron microscopy
    Molybdenum
    room temperature
    Phototransistors
    Defects
    Photosensitivity

    Keywords

    • photoresponse
    • transition metal dichalcogenides
    • two-dimensional materials

    ASJC Scopus subject areas

    • Engineering(all)
    • Materials Science(all)
    • Physics and Astronomy(all)

    Cite this

    Chang, Y. H., Zhang, W., Zhu, Y., Han, Y., Pu, J., Chang, J. K., ... Li, L. J. (2014). Monolayer MoSe2 grown by chemical vapor deposition for fast photodetection. ACS Nano, 8(8), 8582-8590. https://doi.org/10.1021/nn503287m

    Monolayer MoSe2 grown by chemical vapor deposition for fast photodetection. / Chang, Yung Huang; Zhang, Wenjing; Zhu, Yihan; Han, Yu; Pu, Jiang; Chang, Jan Kai; Hsu, Wei Ting; Huang, Jing Kai; Hsu, Chang Lung; Chiu, Ming Hui; Takenobu, Taishi; Li, Henan; Wu, Chih I.; Chang, Wen Hao; Wee, Andrew Thye Shen; Li, Lain Jong.

    In: ACS Nano, Vol. 8, No. 8, 2014, p. 8582-8590.

    Research output: Contribution to journalArticle

    Chang, YH, Zhang, W, Zhu, Y, Han, Y, Pu, J, Chang, JK, Hsu, WT, Huang, JK, Hsu, CL, Chiu, MH, Takenobu, T, Li, H, Wu, CI, Chang, WH, Wee, ATS & Li, LJ 2014, 'Monolayer MoSe2 grown by chemical vapor deposition for fast photodetection', ACS Nano, vol. 8, no. 8, pp. 8582-8590. https://doi.org/10.1021/nn503287m
    Chang YH, Zhang W, Zhu Y, Han Y, Pu J, Chang JK et al. Monolayer MoSe2 grown by chemical vapor deposition for fast photodetection. ACS Nano. 2014;8(8):8582-8590. https://doi.org/10.1021/nn503287m
    Chang, Yung Huang ; Zhang, Wenjing ; Zhu, Yihan ; Han, Yu ; Pu, Jiang ; Chang, Jan Kai ; Hsu, Wei Ting ; Huang, Jing Kai ; Hsu, Chang Lung ; Chiu, Ming Hui ; Takenobu, Taishi ; Li, Henan ; Wu, Chih I. ; Chang, Wen Hao ; Wee, Andrew Thye Shen ; Li, Lain Jong. / Monolayer MoSe2 grown by chemical vapor deposition for fast photodetection. In: ACS Nano. 2014 ; Vol. 8, No. 8. pp. 8582-8590.
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