Monolithically integrated photodetector-amplifier using a-Si: H p-i-n photodiodes and poly-Si thin-film transistors

Noriyoshi Yamauchi, Yasushi Inaba, Masamichi Okamura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

To achieve two-dimensional arrays with massive pixels, we propose a photodetecting circuit consisting of a bridge photodetector surface and a CMOS differential amplifier, both monolithically integrated on a transparent substrate. In this work, we have fabricated and characterized a test circuit using a a-Si:H p-i-n photodiodes (PDs) and poly-Si thin-film transistors (TFTs) to demonstrate the feasibility of such photodetctor-amplifier.

Original languageEnglish
Title of host publicationConference on Solid State Devices and Materials
Place of PublicationTokyo, Japan
PublisherPubl by Business Cent for Acad Soc Japan
Pages691-692
Number of pages2
Publication statusPublished - 1992
Externally publishedYes
EventExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
Duration: 1992 Aug 261992 Aug 28

Other

OtherExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
CityTsukuba, Jpn
Period92/8/2692/8/28

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Yamauchi, N., Inaba, Y., & Okamura, M. (1992). Monolithically integrated photodetector-amplifier using a-Si: H p-i-n photodiodes and poly-Si thin-film transistors. In Conference on Solid State Devices and Materials (pp. 691-692). Publ by Business Cent for Acad Soc Japan.