Monolithically integrated photodetector-amplifier using a-Si: H p-i-n photodiodes and poly-Si thin-film transistors

Noriyoshi Yamauchi, Yasushi Inaba, Masamichi Okamura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

To achieve two-dimensional arrays with massive pixels, we propose a photodetecting circuit consisting of a bridge photodetector surface and a CMOS differential amplifier, both monolithically integrated on a transparent substrate. In this work, we have fabricated and characterized a test circuit using a a-Si:H p-i-n photodiodes (PDs) and poly-Si thin-film transistors (TFTs) to demonstrate the feasibility of such photodetctor-amplifier.

Original languageEnglish
Title of host publicationConference on Solid State Devices and Materials
Place of PublicationTokyo, Japan
PublisherPubl by Business Cent for Acad Soc Japan
Pages691-692
Number of pages2
Publication statusPublished - 1992
Externally publishedYes
EventExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
Duration: 1992 Aug 261992 Aug 28

Other

OtherExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
CityTsukuba, Jpn
Period92/8/2692/8/28

Fingerprint

Thin film transistors
Photodetectors
Photodiodes
Polysilicon
Differential amplifiers
Networks (circuits)
Pixels
Substrates

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Yamauchi, N., Inaba, Y., & Okamura, M. (1992). Monolithically integrated photodetector-amplifier using a-Si: H p-i-n photodiodes and poly-Si thin-film transistors. In Conference on Solid State Devices and Materials (pp. 691-692). Tokyo, Japan: Publ by Business Cent for Acad Soc Japan.

Monolithically integrated photodetector-amplifier using a-Si : H p-i-n photodiodes and poly-Si thin-film transistors. / Yamauchi, Noriyoshi; Inaba, Yasushi; Okamura, Masamichi.

Conference on Solid State Devices and Materials. Tokyo, Japan : Publ by Business Cent for Acad Soc Japan, 1992. p. 691-692.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yamauchi, N, Inaba, Y & Okamura, M 1992, Monolithically integrated photodetector-amplifier using a-Si: H p-i-n photodiodes and poly-Si thin-film transistors. in Conference on Solid State Devices and Materials. Publ by Business Cent for Acad Soc Japan, Tokyo, Japan, pp. 691-692, Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, Tsukuba, Jpn, 92/8/26.
Yamauchi N, Inaba Y, Okamura M. Monolithically integrated photodetector-amplifier using a-Si: H p-i-n photodiodes and poly-Si thin-film transistors. In Conference on Solid State Devices and Materials. Tokyo, Japan: Publ by Business Cent for Acad Soc Japan. 1992. p. 691-692
Yamauchi, Noriyoshi ; Inaba, Yasushi ; Okamura, Masamichi. / Monolithically integrated photodetector-amplifier using a-Si : H p-i-n photodiodes and poly-Si thin-film transistors. Conference on Solid State Devices and Materials. Tokyo, Japan : Publ by Business Cent for Acad Soc Japan, 1992. pp. 691-692
@inproceedings{0727fad7020242d09fd0e4fbdb9ceb76,
title = "Monolithically integrated photodetector-amplifier using a-Si: H p-i-n photodiodes and poly-Si thin-film transistors",
abstract = "To achieve two-dimensional arrays with massive pixels, we propose a photodetecting circuit consisting of a bridge photodetector surface and a CMOS differential amplifier, both monolithically integrated on a transparent substrate. In this work, we have fabricated and characterized a test circuit using a a-Si:H p-i-n photodiodes (PDs) and poly-Si thin-film transistors (TFTs) to demonstrate the feasibility of such photodetctor-amplifier.",
author = "Noriyoshi Yamauchi and Yasushi Inaba and Masamichi Okamura",
year = "1992",
language = "English",
pages = "691--692",
booktitle = "Conference on Solid State Devices and Materials",
publisher = "Publ by Business Cent for Acad Soc Japan",

}

TY - GEN

T1 - Monolithically integrated photodetector-amplifier using a-Si

T2 - H p-i-n photodiodes and poly-Si thin-film transistors

AU - Yamauchi, Noriyoshi

AU - Inaba, Yasushi

AU - Okamura, Masamichi

PY - 1992

Y1 - 1992

N2 - To achieve two-dimensional arrays with massive pixels, we propose a photodetecting circuit consisting of a bridge photodetector surface and a CMOS differential amplifier, both monolithically integrated on a transparent substrate. In this work, we have fabricated and characterized a test circuit using a a-Si:H p-i-n photodiodes (PDs) and poly-Si thin-film transistors (TFTs) to demonstrate the feasibility of such photodetctor-amplifier.

AB - To achieve two-dimensional arrays with massive pixels, we propose a photodetecting circuit consisting of a bridge photodetector surface and a CMOS differential amplifier, both monolithically integrated on a transparent substrate. In this work, we have fabricated and characterized a test circuit using a a-Si:H p-i-n photodiodes (PDs) and poly-Si thin-film transistors (TFTs) to demonstrate the feasibility of such photodetctor-amplifier.

UR - http://www.scopus.com/inward/record.url?scp=0026959158&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026959158&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0026959158

SP - 691

EP - 692

BT - Conference on Solid State Devices and Materials

PB - Publ by Business Cent for Acad Soc Japan

CY - Tokyo, Japan

ER -