Monolithically integrated quantum dot optical gain modulator with semiconductor optical amplifier for 10-Gb/s photonic transmission

Naokatsu Yamamoto, Kouichi Akahane, Toshimasa Umezawa, Tetsuya Kawanishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Short-range interconnection and/or data center networks require high capacity and a large number of channels in order to support numerous connections. Solutions employed to meet these requirements involve the use of alternative wavebands to increase the usable optical frequency range. We recently proposed the use of the T-and O-bands (Thousand band: 1000-1260 nm, Original band: 1260-1360 nm) as alternative wavebands because large optical frequency resources (>60 THz) can be easily employed. In addition, a simple and compact Gb/s-order high-speed optical modulator is a critical photonic device for short-range communications. Therefore, to develop an optical modulator that acts as a highfunctional photonic device, we focused on the use of self-assembled quantum dots (QDs) as a three-dimensional (3D) confined structure because QD structures are highly suitable for realizing broadband optical gain media in the T+O bands. In this study, we use the high-quality broadband QD optical gain to develop a monolithically integrated QD optical gain modulator (QD-OGM) device that has a semiconductor optical amplifier (QD-SOA) for Gb/s-order highspeed optical data generation in the 1.3-μm waveband. The insertion loss of the device can be compensated through the SOA, and we obtained an optical gain change of up to ∼7 dB in the OGM section. Further, we successfully demonstrate a 10-Gb/s clear eye opening using the QD-OGM/SOA device with a clock-data recovery sequence at the receiver end. These results suggest that the monolithic QD-EOM/SOA is suitable for increasing the number of wavelength channels for smart short-range communications.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSPIE
Volume9359
ISBN (Print)9781628414493
DOIs
Publication statusPublished - 2015
Externally publishedYes
EventOptical Components and Materials XII - San Francisco, United States
Duration: 2015 Feb 92015 Feb 11

Other

OtherOptical Components and Materials XII
CountryUnited States
CitySan Francisco
Period15/2/915/2/11

Fingerprint

Semiconductor Optical Amplifier
Optical gain
Semiconductor optical amplifiers
Modulator
Quantum Dots
Photonics
light amplifiers
Modulators
Semiconductor quantum dots
modulators
quantum dots
photonics
Service oriented architecture (SOA)
Photonic devices
Light modulators
communication
Range of data
Broadband
Naphazoline
broadband

Keywords

  • Data transmission
  • Monolithically integrated photonic device
  • Optical fiber communication
  • Optical frequency resource
  • Optical interconnection
  • Optical modulator
  • Quantum dot
  • Semiconductor optical amplifier

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Yamamoto, N., Akahane, K., Umezawa, T., & Kawanishi, T. (2015). Monolithically integrated quantum dot optical gain modulator with semiconductor optical amplifier for 10-Gb/s photonic transmission. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 9359). [93591E] SPIE. https://doi.org/10.1117/12.2077346

Monolithically integrated quantum dot optical gain modulator with semiconductor optical amplifier for 10-Gb/s photonic transmission. / Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 9359 SPIE, 2015. 93591E.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yamamoto, N, Akahane, K, Umezawa, T & Kawanishi, T 2015, Monolithically integrated quantum dot optical gain modulator with semiconductor optical amplifier for 10-Gb/s photonic transmission. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 9359, 93591E, SPIE, Optical Components and Materials XII, San Francisco, United States, 15/2/9. https://doi.org/10.1117/12.2077346
Yamamoto N, Akahane K, Umezawa T, Kawanishi T. Monolithically integrated quantum dot optical gain modulator with semiconductor optical amplifier for 10-Gb/s photonic transmission. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 9359. SPIE. 2015. 93591E https://doi.org/10.1117/12.2077346
Yamamoto, Naokatsu ; Akahane, Kouichi ; Umezawa, Toshimasa ; Kawanishi, Tetsuya. / Monolithically integrated quantum dot optical gain modulator with semiconductor optical amplifier for 10-Gb/s photonic transmission. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 9359 SPIE, 2015.
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abstract = "Short-range interconnection and/or data center networks require high capacity and a large number of channels in order to support numerous connections. Solutions employed to meet these requirements involve the use of alternative wavebands to increase the usable optical frequency range. We recently proposed the use of the T-and O-bands (Thousand band: 1000-1260 nm, Original band: 1260-1360 nm) as alternative wavebands because large optical frequency resources (>60 THz) can be easily employed. In addition, a simple and compact Gb/s-order high-speed optical modulator is a critical photonic device for short-range communications. Therefore, to develop an optical modulator that acts as a highfunctional photonic device, we focused on the use of self-assembled quantum dots (QDs) as a three-dimensional (3D) confined structure because QD structures are highly suitable for realizing broadband optical gain media in the T+O bands. In this study, we use the high-quality broadband QD optical gain to develop a monolithically integrated QD optical gain modulator (QD-OGM) device that has a semiconductor optical amplifier (QD-SOA) for Gb/s-order highspeed optical data generation in the 1.3-μm waveband. The insertion loss of the device can be compensated through the SOA, and we obtained an optical gain change of up to ∼7 dB in the OGM section. Further, we successfully demonstrate a 10-Gb/s clear eye opening using the QD-OGM/SOA device with a clock-data recovery sequence at the receiver end. These results suggest that the monolithic QD-EOM/SOA is suitable for increasing the number of wavelength channels for smart short-range communications.",
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