MOSFETs on (110) C-H Diamond: ALD Al2O3/Diamond Interface Analysis and High Performance Normally-OFF Operation Realization

Benjian Liu, Te Bi, Yu Fu, Ken Kudara, Shoichiro Imanishi, Kang Liu, Bing Dai, Jiaqi Zhu, Hiroshi Kawarada*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Hole concentration of 2-D hole gas (2DHG) on (110) diamond is higher than that on other faces, making it the best choice for power device application. Detailed analysis of atomic layer deposition (ALD) Al2O3/(110) C-H diamond interface structure is of vital importance. MOSFETs with thin (10 nm) and thick (100 nm) ALD Al2O3 layer were made in this study. The microstructure of Al2O3 on (110) C-H diamond was analyzed. Abrupt interface of ALD Al2O3/C-H diamond was observed through high resolution transmission electron microscope (HRTEM). Cascode structure using diamond MOSFETs and enhancement mode silicon MOSFET is fabricated and its high performance is confirmed.

Original languageEnglish
Pages (from-to)949-955
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume69
Issue number3
DOIs
Publication statusPublished - 2022 Mar 1

Keywords

  • Atomic layer deposition (ALD) AlâOâ
  • FET
  • conduction mechanism
  • diamond
  • normally-OFF

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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