MOSFETs on polished surfaces of polycrystalline diamond

K. Kitatani, H. Umezawa, K. Tsugawa, K. Ueyama, T. Ishikura, S. Yamashita, H. Kawarada

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

MOSFETs on polished polycrystalline diamond surfaces have been fabricated. The best transconductance is 1.0mS/mm. The breakdown voltages of these FETs are over 200V, comparable to those reported in homoepitaxial diamond MESFETs. A polycrystalline diamond FET is a candidate for sensors in hard environment, due to its feasibility in large-area wafers.

Original languageEnglish
Pages (from-to)1831-1833
Number of pages3
JournalDiamond and Related Materials
Volume8
Issue number10
DOIs
Publication statusPublished - 1999 Oct

Keywords

  • Diamond
  • Hydrogen-terminated
  • MOSFET
  • Polycrystalline

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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  • Cite this

    Kitatani, K., Umezawa, H., Tsugawa, K., Ueyama, K., Ishikura, T., Yamashita, S., & Kawarada, H. (1999). MOSFETs on polished surfaces of polycrystalline diamond. Diamond and Related Materials, 8(10), 1831-1833. https://doi.org/10.1016/S0925-9635(99)00121-1