MOSFETs on polished polycrystalline diamond surfaces have been fabricated. The best transconductance is 1.0mS/mm. The breakdown voltages of these FETs are over 200V, comparable to those reported in homoepitaxial diamond MESFETs. A polycrystalline diamond FET is a candidate for sensors in hard environment, due to its feasibility in large-area wafers.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Mechanical Engineering
- Materials Chemistry
- Electrical and Electronic Engineering