MOSFETs on polished surfaces of polycrystalline diamond

K. Kitatani, H. Umezawa, K. Tsugawa, K. Ueyama, T. Ishikura, S. Yamashita, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    15 Citations (Scopus)

    Abstract

    MOSFETs on polished polycrystalline diamond surfaces have been fabricated. The best transconductance is 1.0mS/mm. The breakdown voltages of these FETs are over 200V, comparable to those reported in homoepitaxial diamond MESFETs. A polycrystalline diamond FET is a candidate for sensors in hard environment, due to its feasibility in large-area wafers.

    Original languageEnglish
    Pages (from-to)1831-1833
    Number of pages3
    JournalDiamond and Related Materials
    Volume8
    Issue number10
    Publication statusPublished - 1999 Oct

    Fingerprint

    Diamond
    Diamonds
    field effect transistors
    diamonds
    Field effect transistors
    Transconductance
    Electric breakdown
    transconductance
    electrical faults
    Sensors
    wafers
    sensors

    Keywords

    • Diamond
    • Hydrogen-terminated
    • MOSFET
    • Polycrystalline

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Materials Chemistry
    • Surfaces, Coatings and Films
    • Surfaces and Interfaces

    Cite this

    Kitatani, K., Umezawa, H., Tsugawa, K., Ueyama, K., Ishikura, T., Yamashita, S., & Kawarada, H. (1999). MOSFETs on polished surfaces of polycrystalline diamond. Diamond and Related Materials, 8(10), 1831-1833.

    MOSFETs on polished surfaces of polycrystalline diamond. / Kitatani, K.; Umezawa, H.; Tsugawa, K.; Ueyama, K.; Ishikura, T.; Yamashita, S.; Kawarada, Hiroshi.

    In: Diamond and Related Materials, Vol. 8, No. 10, 10.1999, p. 1831-1833.

    Research output: Contribution to journalArticle

    Kitatani, K, Umezawa, H, Tsugawa, K, Ueyama, K, Ishikura, T, Yamashita, S & Kawarada, H 1999, 'MOSFETs on polished surfaces of polycrystalline diamond', Diamond and Related Materials, vol. 8, no. 10, pp. 1831-1833.
    Kitatani K, Umezawa H, Tsugawa K, Ueyama K, Ishikura T, Yamashita S et al. MOSFETs on polished surfaces of polycrystalline diamond. Diamond and Related Materials. 1999 Oct;8(10):1831-1833.
    Kitatani, K. ; Umezawa, H. ; Tsugawa, K. ; Ueyama, K. ; Ishikura, T. ; Yamashita, S. ; Kawarada, Hiroshi. / MOSFETs on polished surfaces of polycrystalline diamond. In: Diamond and Related Materials. 1999 ; Vol. 8, No. 10. pp. 1831-1833.
    @article{be725ee2d9c34e638669cb1007d14c1e,
    title = "MOSFETs on polished surfaces of polycrystalline diamond",
    abstract = "MOSFETs on polished polycrystalline diamond surfaces have been fabricated. The best transconductance is 1.0mS/mm. The breakdown voltages of these FETs are over 200V, comparable to those reported in homoepitaxial diamond MESFETs. A polycrystalline diamond FET is a candidate for sensors in hard environment, due to its feasibility in large-area wafers.",
    keywords = "Diamond, Hydrogen-terminated, MOSFET, Polycrystalline",
    author = "K. Kitatani and H. Umezawa and K. Tsugawa and K. Ueyama and T. Ishikura and S. Yamashita and Hiroshi Kawarada",
    year = "1999",
    month = "10",
    language = "English",
    volume = "8",
    pages = "1831--1833",
    journal = "Diamond and Related Materials",
    issn = "0925-9635",
    publisher = "Elsevier BV",
    number = "10",

    }

    TY - JOUR

    T1 - MOSFETs on polished surfaces of polycrystalline diamond

    AU - Kitatani, K.

    AU - Umezawa, H.

    AU - Tsugawa, K.

    AU - Ueyama, K.

    AU - Ishikura, T.

    AU - Yamashita, S.

    AU - Kawarada, Hiroshi

    PY - 1999/10

    Y1 - 1999/10

    N2 - MOSFETs on polished polycrystalline diamond surfaces have been fabricated. The best transconductance is 1.0mS/mm. The breakdown voltages of these FETs are over 200V, comparable to those reported in homoepitaxial diamond MESFETs. A polycrystalline diamond FET is a candidate for sensors in hard environment, due to its feasibility in large-area wafers.

    AB - MOSFETs on polished polycrystalline diamond surfaces have been fabricated. The best transconductance is 1.0mS/mm. The breakdown voltages of these FETs are over 200V, comparable to those reported in homoepitaxial diamond MESFETs. A polycrystalline diamond FET is a candidate for sensors in hard environment, due to its feasibility in large-area wafers.

    KW - Diamond

    KW - Hydrogen-terminated

    KW - MOSFET

    KW - Polycrystalline

    UR - http://www.scopus.com/inward/record.url?scp=0032657947&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0032657947&partnerID=8YFLogxK

    M3 - Article

    VL - 8

    SP - 1831

    EP - 1833

    JO - Diamond and Related Materials

    JF - Diamond and Related Materials

    SN - 0925-9635

    IS - 10

    ER -