MOVPE-GROWN InAs/InGaAs multiple-quantum-well lasers emitting at 2.33 μm

Tomonari Sato, Manabu Mitsuhara, Takaaki Kakitsuka, Yasuhiro Kondo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

We achieved an emission wavelength of 2.33 μm in an InAs/InGaAs multiple-quantum-well (MQW) laser grown by metalorganic vapor phase epitaxy. MQWs with flat interfaces and good thermal stability were obtained by decreasing the growth temperature to 500°C. The PL peak wavelengths of the MQWs were controlled from 1.93 to 2.47 μn by changing the thickness of the InAs wells. For a broad-area laser, the threshold current density was 1.52 kA/cm 2 and the output power was above 12 mW.

Original languageEnglish
Title of host publicationIPRM'07
Subtitle of host publicationIEEE 19th International Conference on Indium Phosphide and Related Materials - Conference Proceedings
Pages380-383
Number of pages4
DOIs
Publication statusPublished - 2007 Oct 2
Externally publishedYes
EventIPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials - Matsue, Japan
Duration: 2007 May 142007 May 18

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Conference

ConferenceIPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials
CountryJapan
CityMatsue
Period07/5/1407/5/18

Fingerprint

Quantum well lasers
Metallorganic vapor phase epitaxy
Semiconductor quantum wells
Threshold current density
Wavelength
Growth temperature
Thermodynamic stability
Lasers
indium arsenide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Sato, T., Mitsuhara, M., Kakitsuka, T., & Kondo, Y. (2007). MOVPE-GROWN InAs/InGaAs multiple-quantum-well lasers emitting at 2.33 μm. In IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials - Conference Proceedings (pp. 380-383). [4265960] (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2007.381203

MOVPE-GROWN InAs/InGaAs multiple-quantum-well lasers emitting at 2.33 μm. / Sato, Tomonari; Mitsuhara, Manabu; Kakitsuka, Takaaki; Kondo, Yasuhiro.

IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials - Conference Proceedings. 2007. p. 380-383 4265960 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sato, T, Mitsuhara, M, Kakitsuka, T & Kondo, Y 2007, MOVPE-GROWN InAs/InGaAs multiple-quantum-well lasers emitting at 2.33 μm. in IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials - Conference Proceedings., 4265960, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, pp. 380-383, IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials, Matsue, Japan, 07/5/14. https://doi.org/10.1109/ICIPRM.2007.381203
Sato T, Mitsuhara M, Kakitsuka T, Kondo Y. MOVPE-GROWN InAs/InGaAs multiple-quantum-well lasers emitting at 2.33 μm. In IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials - Conference Proceedings. 2007. p. 380-383. 4265960. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2007.381203
Sato, Tomonari ; Mitsuhara, Manabu ; Kakitsuka, Takaaki ; Kondo, Yasuhiro. / MOVPE-GROWN InAs/InGaAs multiple-quantum-well lasers emitting at 2.33 μm. IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials - Conference Proceedings. 2007. pp. 380-383 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).
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