MOVPE growth and photoluminescence of wurtzite InN

T. Matsuoka, H. Okamoto, H. Takahata, T. Mitate, S. Mizuno, Y. Uchiyama, Toshiki Makimoto

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

The crystallographic relationship between InN and its interfaces with GaN and sapphire was investigated using selected area diffraction patterns obtained with a transmission electron microscope, and was confirmed using X-ray diffraction pole figures. The lattice of InN grown on a GaN template corresponded to that of the GaN in the c-plane, while that of InN grown directly on sapphire was rotated with respect to the sapphire by 30°. The polarity of InN was investigated using convergent-beam electron diffraction. The InN had the same N-polarity along the growth direction as that reported for Molecular beam epitaxy growth. The growth conditions for high-quality InN with photoluminescence (PL) at room temperature, and no metal indium inclusions are described. The dependence of PL characteristics on the growth conditions was investigated. The PL peak was observed to shift to higher energies as the growth temperature rose. However, it is noteworthy that hardly any PL peak shift was observed with the measurement temperature. From the data reported up to now, uncooled and high-power operation laser diodes for optical communications systems can be expected.

Original languageEnglish
Pages (from-to)139-144
Number of pages6
JournalJournal of Crystal Growth
Volume269
Issue number1
DOIs
Publication statusPublished - 2004 Aug 15
Externally publishedYes

Fingerprint

Metallorganic vapor phase epitaxy
wurtzite
Aluminum Oxide
Photoluminescence
Sapphire
photoluminescence
sapphire
polarity
Indium
Growth temperature
Optical communication
Molecular beam epitaxy
Electron diffraction
Temperature measurement
Diffraction patterns
shift
Semiconductor lasers
Poles
Communication systems
Electron microscopes

Keywords

  • A1. Optical absorption
  • A3. Vapor-phase epitaxy
  • B1. InN
  • B2. III-V Semiconductors

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Matsuoka, T., Okamoto, H., Takahata, H., Mitate, T., Mizuno, S., Uchiyama, Y., & Makimoto, T. (2004). MOVPE growth and photoluminescence of wurtzite InN. Journal of Crystal Growth, 269(1), 139-144. https://doi.org/10.1016/j.jcrysgro.2004.05.057

MOVPE growth and photoluminescence of wurtzite InN. / Matsuoka, T.; Okamoto, H.; Takahata, H.; Mitate, T.; Mizuno, S.; Uchiyama, Y.; Makimoto, Toshiki.

In: Journal of Crystal Growth, Vol. 269, No. 1, 15.08.2004, p. 139-144.

Research output: Contribution to journalArticle

Matsuoka, T, Okamoto, H, Takahata, H, Mitate, T, Mizuno, S, Uchiyama, Y & Makimoto, T 2004, 'MOVPE growth and photoluminescence of wurtzite InN', Journal of Crystal Growth, vol. 269, no. 1, pp. 139-144. https://doi.org/10.1016/j.jcrysgro.2004.05.057
Matsuoka T, Okamoto H, Takahata H, Mitate T, Mizuno S, Uchiyama Y et al. MOVPE growth and photoluminescence of wurtzite InN. Journal of Crystal Growth. 2004 Aug 15;269(1):139-144. https://doi.org/10.1016/j.jcrysgro.2004.05.057
Matsuoka, T. ; Okamoto, H. ; Takahata, H. ; Mitate, T. ; Mizuno, S. ; Uchiyama, Y. ; Makimoto, Toshiki. / MOVPE growth and photoluminescence of wurtzite InN. In: Journal of Crystal Growth. 2004 ; Vol. 269, No. 1. pp. 139-144.
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