MOVPE growth of InGaAsP using TBA and TBP with extremely low V/III ratio

M. Horita, M. Suzuki, Yuichi Matsushima

Research output: Contribution to journalArticle

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Abstract

MOVPE growth of InGaAsP using tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) was successfully performed with extremely low V/III ratios. The detailed V/III ratio dependence of electrical properties of InP and InGaAs and optical properties of InGaAsP is discussed. Electrical and optical properties of the epitaxial layers grown with extremely low V/III ratios were investigated for the first time. Featureless surface morphology was obtained for InP grown with V/III ratio of as low as 3. Even with such a low V/III ratio, good electrical properties, net carrier concentrations of less than 1 × 1015 cm-3 and electron Hall mobilities of higher than 30,000 cm2/V · s at 77 K, were achieved. For both InP and InGaAs grown with low V/III ratios of 1-5, the growth rates were almost the same as those with higher V/III ratios of more than 30. Good electrical properties of InGaAs were also confirmed. InGaAsP epitaxial layers with λg = 1.18-1.67 μm were grown with V/III ratios of 1-10. It was clarified experimentally that a lower V/III ratio gave a higher incorporation efficiency of phosphorus in the growth of InGaAsP using TBA and TBP. The photoluminescence intensities and full widths at half maximum at room temperature of InGaAsP/InP double hetero-structures were as good as those grown using AsH3 and PH3.

Original languageEnglish
Pages (from-to)123-128
Number of pages6
JournalJournal of Crystal Growth
Volume124
Issue number1-4
DOIs
Publication statusPublished - 1992 Nov 1
Externally publishedYes

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Metallorganic vapor phase epitaxy
Electric properties
electrical properties
Epitaxial layers
Optical properties
optical properties
Hall mobility
Full width at half maximum
Phosphorus
Surface morphology
Carrier concentration
phosphorus
Photoluminescence
photoluminescence
Electrons
room temperature
electrons
Temperature

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

MOVPE growth of InGaAsP using TBA and TBP with extremely low V/III ratio. / Horita, M.; Suzuki, M.; Matsushima, Yuichi.

In: Journal of Crystal Growth, Vol. 124, No. 1-4, 01.11.1992, p. 123-128.

Research output: Contribution to journalArticle

Horita, M. ; Suzuki, M. ; Matsushima, Yuichi. / MOVPE growth of InGaAsP using TBA and TBP with extremely low V/III ratio. In: Journal of Crystal Growth. 1992 ; Vol. 124, No. 1-4. pp. 123-128.
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