TY - GEN
T1 - Multilayered shear wave resonator consisting of c-axis tilted ZnO films
AU - Morisato, Naoki
AU - Takayanagi, Shinji
AU - Yanagitani, Takahiko
AU - Matsukawa, Mami
AU - Watanabe, Yoshiaki
PY - 2009
Y1 - 2009
N2 - Multilayer resonator consisting of six layered ZnO films was fabricated using RF magnetron sputtering. To prevent degradation of crystalline orientation, SiO2 buffer layers were inserted between each ZnO layer. The influences of the method for SiO2 deposition on the crystalline orientation also have been investigated. Crystalline orientation of the c-axis tilted ZnO films were confirmed by XRD pole figure analysis and SEM images. In the sixth order mode shear mode resonant frequency, high efficient shear mode excitation with relatively suppressed extensional mode excitation was observed. More extensional mode suppression is expected by increasing the number of the layer.
AB - Multilayer resonator consisting of six layered ZnO films was fabricated using RF magnetron sputtering. To prevent degradation of crystalline orientation, SiO2 buffer layers were inserted between each ZnO layer. The influences of the method for SiO2 deposition on the crystalline orientation also have been investigated. Crystalline orientation of the c-axis tilted ZnO films were confirmed by XRD pole figure analysis and SEM images. In the sixth order mode shear mode resonant frequency, high efficient shear mode excitation with relatively suppressed extensional mode excitation was observed. More extensional mode suppression is expected by increasing the number of the layer.
KW - C-axis-tilted ZnO films
KW - Electromechanical coupling coefficient
KW - Multilayered resonator
KW - RF magnetron sputtering method
KW - Thickness shear mode
UR - http://www.scopus.com/inward/record.url?scp=77952874243&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77952874243&partnerID=8YFLogxK
U2 - 10.1109/ULTSYM.2009.5441444
DO - 10.1109/ULTSYM.2009.5441444
M3 - Conference contribution
AN - SCOPUS:77952874243
SN - 9781424443895
T3 - Proceedings - IEEE Ultrasonics Symposium
SP - 2162
EP - 2165
BT - 2009 IEEE International Ultrasonics Symposium and Short Courses, IUS 2009
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2009 IEEE International Ultrasonics Symposium, IUS 2009
Y2 - 20 September 2009 through 23 September 2009
ER -