MULTIMICROELECTRODE FABRICATED BY SILICON DRY ETCHING.

Kohro Takahashi, Shuichi Shoji, Tadayuki Matsuo

Research output: Contribution to journalArticle

Abstract

In neurophysiology, it is important to record neural impulses from the central neural system simultaneously. For this purpose, a silicon substrate which forms a multimicroelectrode was fabricated and a precise fabrication of a 10 mu m thick microelectrode with a 30 mu m wide tip was achieved by using Si dry etching. The high-quality insulation of the electrode in a physiological solution was obtained by using Ta and high-temperature CVD Si//3N//4. However, Ta itself is not adequate for the recording site because it is oxidized easily in an electrolyte causing the increase of the electrode impedance. Platinum-black was electroplated on the titanium surface in order to stabilize and reduce the electrode impedance. The interelectrode crosstalk between electrodes and signal attenuation due to parasitic capacitances were 0. 4% and 4. 4%, respectively.

Original languageEnglish
Pages (from-to)86-92
Number of pages7
JournalElectronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
Volume70
Issue number4
Publication statusPublished - 1987 Apr
Externally publishedYes

Fingerprint

Dry etching
etching
Silicon
Electrodes
electrodes
silicon
neurophysiology
platinum black
Neurophysiology
impedance
Microelectrodes
Crosstalk
crosstalk
insulation
impulses
Insulation
Platinum
Chemical vapor deposition
Capacitance
titanium

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

MULTIMICROELECTRODE FABRICATED BY SILICON DRY ETCHING. / Takahashi, Kohro; Shoji, Shuichi; Matsuo, Tadayuki.

In: Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi), Vol. 70, No. 4, 04.1987, p. 86-92.

Research output: Contribution to journalArticle

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