N-AlGaN/p-InGaN/n-GaN heterojunction bipolar transistors for high power operation

Toshiki Makimoto, K. Kumakura, N. Kobayashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

15 Citations (Scopus)

Abstract

We have fabricated N-AlGaN/p-InGaN/n-GaN heterojunction bipolar transistors to evaluate their common-emitter current-voltage (I-V) characteristics at room temperature. The device has a Si-doped N-AlGaN emitter, a Mg-doped p-InGaN base, and a Si-doped n-GaN collector. The common-emitter I-V characteristics were observed up to a collector-emitter voltage of 70 V and a collector current of 14.5 mA. The breakdown voltage is as high as 100 V. The corresponding breakdown electric field is 2 × 10 6 V/cm, which is comparable to the expected one for GaN. This high breakdown electric field is ascribed to a less damaged p-InGaN and a wide bandgap of an n-GaN collector. Furthermore, the leakage path through the defects in InGaN layers is considered to be eliminated by filling them with wide bandgap AlGaN layers during the emitter growth.

Original languageEnglish
Title of host publicationPhysica Status Solidi C: Conferences
Pages95-98
Number of pages4
Edition1
DOIs
Publication statusPublished - 2002
Externally publishedYes
Event2nd International Workshop on Nitride Semiconductors, IWN 2002 - Aachen, Germany
Duration: 2002 Jul 222002 Jul 25

Other

Other2nd International Workshop on Nitride Semiconductors, IWN 2002
CountryGermany
CityAachen
Period02/7/2202/7/25

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Makimoto, T., Kumakura, K., & Kobayashi, N. (2002). N-AlGaN/p-InGaN/n-GaN heterojunction bipolar transistors for high power operation. In Physica Status Solidi C: Conferences (1 ed., pp. 95-98) https://doi.org/10.1002/pssc.200390125