n-type control by sulfur ion implantation in homoepitaxial diamond films grown by chemical vapor deposition

Masataka Hasegawa, Daisuke Takeuchi, Sadanori Yamanaka, Masahiko Ogura, Hideyuki Watanabe, Naoto Kobayashi, Hideyo Okushi, Koji Kajimura

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65 Citations (Scopus)

Abstract

n-type control was achieved by sulfur-ion-implantation in homoepitaxial diamond (100) films grown by chemical vapor deposition (CVD) for the first time. Sulfur-implantation was carried out with energies of up to 400 keV at 400 °C. The activation energy of the conductivity was 0.19 - 0.33 eV depending on the conditions of ion implantation. A junction between this layer and a boron-doped p-type layer was fabricated by combining sulfur-implantation with gas-phase boron doping during CVD. The junction exhibited clear pn junction properties. The capacitance of the junction decreased with reverse bias voltage, which confirms that the depletion region of the junction was actually extended with the reverse bias voltage.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume38
Issue number12 B
Publication statusPublished - 1999
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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