n-type control by sulfur ion implantation in homoepitaxial diamond films grown by chemical vapor deposition

Masataka Hasegawa, Daisuke Takeuchi, Sadanori Yamanaka, Masahiko Ogura, Hideyuki Watanabe, Naoto Kobayashi, Hideyo Okushi, Koji Kajimura

Research output: Contribution to journalArticle

63 Citations (Scopus)

Abstract

n-type control was achieved by sulfur-ion-implantation in homoepitaxial diamond (100) films grown by chemical vapor deposition (CVD) for the first time. Sulfur-implantation was carried out with energies of up to 400 keV at 400 °C. The activation energy of the conductivity was 0.19 - 0.33 eV depending on the conditions of ion implantation. A junction between this layer and a boron-doped p-type layer was fabricated by combining sulfur-implantation with gas-phase boron doping during CVD. The junction exhibited clear pn junction properties. The capacitance of the junction decreased with reverse bias voltage, which confirms that the depletion region of the junction was actually extended with the reverse bias voltage.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume38
Issue number12 B
Publication statusPublished - 1999
Externally publishedYes

Fingerprint

Diamond films
diamond films
Ion implantation
ion implantation
Chemical vapor deposition
sulfur
Sulfur
vapor deposition
Bias voltage
Boron
implantation
boron
Capacitance
Activation energy
Doping (additives)
electric potential
Gases
depletion
capacitance
diamonds

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

n-type control by sulfur ion implantation in homoepitaxial diamond films grown by chemical vapor deposition. / Hasegawa, Masataka; Takeuchi, Daisuke; Yamanaka, Sadanori; Ogura, Masahiko; Watanabe, Hideyuki; Kobayashi, Naoto; Okushi, Hideyo; Kajimura, Koji.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 38, No. 12 B, 1999.

Research output: Contribution to journalArticle

Hasegawa, M, Takeuchi, D, Yamanaka, S, Ogura, M, Watanabe, H, Kobayashi, N, Okushi, H & Kajimura, K 1999, 'n-type control by sulfur ion implantation in homoepitaxial diamond films grown by chemical vapor deposition', Japanese Journal of Applied Physics, Part 2: Letters, vol. 38, no. 12 B.
Hasegawa, Masataka ; Takeuchi, Daisuke ; Yamanaka, Sadanori ; Ogura, Masahiko ; Watanabe, Hideyuki ; Kobayashi, Naoto ; Okushi, Hideyo ; Kajimura, Koji. / n-type control by sulfur ion implantation in homoepitaxial diamond films grown by chemical vapor deposition. In: Japanese Journal of Applied Physics, Part 2: Letters. 1999 ; Vol. 38, No. 12 B.
@article{d020e75e8ed542c697b480729467e67e,
title = "n-type control by sulfur ion implantation in homoepitaxial diamond films grown by chemical vapor deposition",
abstract = "n-type control was achieved by sulfur-ion-implantation in homoepitaxial diamond (100) films grown by chemical vapor deposition (CVD) for the first time. Sulfur-implantation was carried out with energies of up to 400 keV at 400 °C. The activation energy of the conductivity was 0.19 - 0.33 eV depending on the conditions of ion implantation. A junction between this layer and a boron-doped p-type layer was fabricated by combining sulfur-implantation with gas-phase boron doping during CVD. The junction exhibited clear pn junction properties. The capacitance of the junction decreased with reverse bias voltage, which confirms that the depletion region of the junction was actually extended with the reverse bias voltage.",
author = "Masataka Hasegawa and Daisuke Takeuchi and Sadanori Yamanaka and Masahiko Ogura and Hideyuki Watanabe and Naoto Kobayashi and Hideyo Okushi and Koji Kajimura",
year = "1999",
language = "English",
volume = "38",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "12 B",

}

TY - JOUR

T1 - n-type control by sulfur ion implantation in homoepitaxial diamond films grown by chemical vapor deposition

AU - Hasegawa, Masataka

AU - Takeuchi, Daisuke

AU - Yamanaka, Sadanori

AU - Ogura, Masahiko

AU - Watanabe, Hideyuki

AU - Kobayashi, Naoto

AU - Okushi, Hideyo

AU - Kajimura, Koji

PY - 1999

Y1 - 1999

N2 - n-type control was achieved by sulfur-ion-implantation in homoepitaxial diamond (100) films grown by chemical vapor deposition (CVD) for the first time. Sulfur-implantation was carried out with energies of up to 400 keV at 400 °C. The activation energy of the conductivity was 0.19 - 0.33 eV depending on the conditions of ion implantation. A junction between this layer and a boron-doped p-type layer was fabricated by combining sulfur-implantation with gas-phase boron doping during CVD. The junction exhibited clear pn junction properties. The capacitance of the junction decreased with reverse bias voltage, which confirms that the depletion region of the junction was actually extended with the reverse bias voltage.

AB - n-type control was achieved by sulfur-ion-implantation in homoepitaxial diamond (100) films grown by chemical vapor deposition (CVD) for the first time. Sulfur-implantation was carried out with energies of up to 400 keV at 400 °C. The activation energy of the conductivity was 0.19 - 0.33 eV depending on the conditions of ion implantation. A junction between this layer and a boron-doped p-type layer was fabricated by combining sulfur-implantation with gas-phase boron doping during CVD. The junction exhibited clear pn junction properties. The capacitance of the junction decreased with reverse bias voltage, which confirms that the depletion region of the junction was actually extended with the reverse bias voltage.

UR - http://www.scopus.com/inward/record.url?scp=0033345746&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033345746&partnerID=8YFLogxK

M3 - Article

VL - 38

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 12 B

ER -