Nano-device simulation from an atomistic view

N. Mori, G. Mil'Nikov, H. Minari, Y. Kamakura, T. Zushi, Takanobu Watanabe, M. Uematsu, K. M. Itoh, S. Uno, H. Tsuchiya

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    7 Citations (Scopus)

    Abstract

    Fluctuations of device characteristics due to random discrete dopant (RDD) distribution are numerically investigated in ultra-small Si nanowire transistors. Kinetic Monte Carlo process simulation is performed to obtain realistic RDD distributions, whose effects on the transport characteristics are then analyzed by using a non-equilibrium Green's function (NEGF) method. Fluctuations due to atomic disorder near the Si/SiO2 interface are also investigated by performing molecular dynamics oxidation simulation for realistic atomic structure models and NEGF device simulation for transport characteristics.

    Original languageEnglish
    Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
    DOIs
    Publication statusPublished - 2013
    Event2013 IEEE International Electron Devices Meeting, IEDM 2013 - Washington, DC
    Duration: 2013 Dec 92013 Dec 11

    Other

    Other2013 IEEE International Electron Devices Meeting, IEDM 2013
    CityWashington, DC
    Period13/12/913/12/11

    Fingerprint

    Green's function
    Doping (additives)
    Green's functions
    Nanowires
    Molecular dynamics
    Transistors
    simulation
    atomic structure
    Oxidation
    Kinetics
    nanowires
    transistors
    disorders
    molecular dynamics
    oxidation
    kinetics

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Condensed Matter Physics
    • Electronic, Optical and Magnetic Materials
    • Materials Chemistry

    Cite this

    Mori, N., Mil'Nikov, G., Minari, H., Kamakura, Y., Zushi, T., Watanabe, T., ... Tsuchiya, H. (2013). Nano-device simulation from an atomistic view. In Technical Digest - International Electron Devices Meeting, IEDM [6724564] https://doi.org/10.1109/IEDM.2013.6724564

    Nano-device simulation from an atomistic view. / Mori, N.; Mil'Nikov, G.; Minari, H.; Kamakura, Y.; Zushi, T.; Watanabe, Takanobu; Uematsu, M.; Itoh, K. M.; Uno, S.; Tsuchiya, H.

    Technical Digest - International Electron Devices Meeting, IEDM. 2013. 6724564.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Mori, N, Mil'Nikov, G, Minari, H, Kamakura, Y, Zushi, T, Watanabe, T, Uematsu, M, Itoh, KM, Uno, S & Tsuchiya, H 2013, Nano-device simulation from an atomistic view. in Technical Digest - International Electron Devices Meeting, IEDM., 6724564, 2013 IEEE International Electron Devices Meeting, IEDM 2013, Washington, DC, 13/12/9. https://doi.org/10.1109/IEDM.2013.6724564
    Mori N, Mil'Nikov G, Minari H, Kamakura Y, Zushi T, Watanabe T et al. Nano-device simulation from an atomistic view. In Technical Digest - International Electron Devices Meeting, IEDM. 2013. 6724564 https://doi.org/10.1109/IEDM.2013.6724564
    Mori, N. ; Mil'Nikov, G. ; Minari, H. ; Kamakura, Y. ; Zushi, T. ; Watanabe, Takanobu ; Uematsu, M. ; Itoh, K. M. ; Uno, S. ; Tsuchiya, H. / Nano-device simulation from an atomistic view. Technical Digest - International Electron Devices Meeting, IEDM. 2013.
    @inproceedings{532aee3f4f9c4714b8905c1028f45bd5,
    title = "Nano-device simulation from an atomistic view",
    abstract = "Fluctuations of device characteristics due to random discrete dopant (RDD) distribution are numerically investigated in ultra-small Si nanowire transistors. Kinetic Monte Carlo process simulation is performed to obtain realistic RDD distributions, whose effects on the transport characteristics are then analyzed by using a non-equilibrium Green's function (NEGF) method. Fluctuations due to atomic disorder near the Si/SiO2 interface are also investigated by performing molecular dynamics oxidation simulation for realistic atomic structure models and NEGF device simulation for transport characteristics.",
    author = "N. Mori and G. Mil'Nikov and H. Minari and Y. Kamakura and T. Zushi and Takanobu Watanabe and M. Uematsu and Itoh, {K. M.} and S. Uno and H. Tsuchiya",
    year = "2013",
    doi = "10.1109/IEDM.2013.6724564",
    language = "English",
    isbn = "9781479923076",
    booktitle = "Technical Digest - International Electron Devices Meeting, IEDM",

    }

    TY - GEN

    T1 - Nano-device simulation from an atomistic view

    AU - Mori, N.

    AU - Mil'Nikov, G.

    AU - Minari, H.

    AU - Kamakura, Y.

    AU - Zushi, T.

    AU - Watanabe, Takanobu

    AU - Uematsu, M.

    AU - Itoh, K. M.

    AU - Uno, S.

    AU - Tsuchiya, H.

    PY - 2013

    Y1 - 2013

    N2 - Fluctuations of device characteristics due to random discrete dopant (RDD) distribution are numerically investigated in ultra-small Si nanowire transistors. Kinetic Monte Carlo process simulation is performed to obtain realistic RDD distributions, whose effects on the transport characteristics are then analyzed by using a non-equilibrium Green's function (NEGF) method. Fluctuations due to atomic disorder near the Si/SiO2 interface are also investigated by performing molecular dynamics oxidation simulation for realistic atomic structure models and NEGF device simulation for transport characteristics.

    AB - Fluctuations of device characteristics due to random discrete dopant (RDD) distribution are numerically investigated in ultra-small Si nanowire transistors. Kinetic Monte Carlo process simulation is performed to obtain realistic RDD distributions, whose effects on the transport characteristics are then analyzed by using a non-equilibrium Green's function (NEGF) method. Fluctuations due to atomic disorder near the Si/SiO2 interface are also investigated by performing molecular dynamics oxidation simulation for realistic atomic structure models and NEGF device simulation for transport characteristics.

    UR - http://www.scopus.com/inward/record.url?scp=84894347864&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84894347864&partnerID=8YFLogxK

    U2 - 10.1109/IEDM.2013.6724564

    DO - 10.1109/IEDM.2013.6724564

    M3 - Conference contribution

    AN - SCOPUS:84894347864

    SN - 9781479923076

    BT - Technical Digest - International Electron Devices Meeting, IEDM

    ER -