Nano-scalc smoothing of double layer porous Si substrates for detaching and fabricating low cost, high efficiency monocrystalline thin film Si solar cell by zone heating recrystallization

Chiaki Takazawa, Makoto Fujita, Kei Hasegawa, Anatolli Lukianov, Xiaomei Zhang, Suguru Noda, Manabu Ihara

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    A fabrication process of monocrystalline thin films for Si solar cells was developed that uses epitaxial growth and layer transfer process for low fabrication cost and high photoelectric conversion efficiency. Fabrication of high crystalline epitaxial thin films requires controlling the surface roughness and pore size of the seed layer in nano-level, double layer porous Si (DLPS). By using this zone heating recrystallization (ZHR) method, in which the top surface of DLPS is selectively annealed by scanning upper lamp heater, we successfully reduced the surface roughness and pore size. By using the rapid vapor deposition (RVD) method, we fabricated an epitaxial monocrystalline Si thin film in 1 mm on the ZHR-treated DLPS and then easily detached this thin film from the substrate. The crystal distortion of epitaxial Si thin films can be controlled by using ZHR to smooth and change only the top surface of DLPS.

    Original languageEnglish
    Title of host publicationPhotovoltaics for the 21st Century 12
    PublisherElectrochemical Society Inc.
    Pages11-23
    Number of pages13
    Volume75
    Edition31
    ISBN (Electronic)9781607685395
    DOIs
    Publication statusPublished - 2016 Jan 1
    EventSymposium on Photovoltaics for the 21st Century 12 - PRiME 2016/230th ECS Meeting - Honolulu, United States
    Duration: 2016 Oct 22016 Oct 7

    Other

    OtherSymposium on Photovoltaics for the 21st Century 12 - PRiME 2016/230th ECS Meeting
    CountryUnited States
    CityHonolulu
    Period16/10/216/10/7

    Fingerprint

    Solar cells
    Heating
    Thin films
    Substrates
    Costs
    Fabrication
    Pore size
    Surface roughness
    Vapor deposition
    Epitaxial films
    Epitaxial layers
    Electric lamps
    Epitaxial growth
    Conversion efficiency
    Seed
    Crystalline materials
    Scanning
    Crystals

    ASJC Scopus subject areas

    • Engineering(all)

    Cite this

    Takazawa, C., Fujita, M., Hasegawa, K., Lukianov, A., Zhang, X., Noda, S., & Ihara, M. (2016). Nano-scalc smoothing of double layer porous Si substrates for detaching and fabricating low cost, high efficiency monocrystalline thin film Si solar cell by zone heating recrystallization. In Photovoltaics for the 21st Century 12 (31 ed., Vol. 75, pp. 11-23). Electrochemical Society Inc.. https://doi.org/10.1149/07S31.0011ecst

    Nano-scalc smoothing of double layer porous Si substrates for detaching and fabricating low cost, high efficiency monocrystalline thin film Si solar cell by zone heating recrystallization. / Takazawa, Chiaki; Fujita, Makoto; Hasegawa, Kei; Lukianov, Anatolli; Zhang, Xiaomei; Noda, Suguru; Ihara, Manabu.

    Photovoltaics for the 21st Century 12. Vol. 75 31. ed. Electrochemical Society Inc., 2016. p. 11-23.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Takazawa, C, Fujita, M, Hasegawa, K, Lukianov, A, Zhang, X, Noda, S & Ihara, M 2016, Nano-scalc smoothing of double layer porous Si substrates for detaching and fabricating low cost, high efficiency monocrystalline thin film Si solar cell by zone heating recrystallization. in Photovoltaics for the 21st Century 12. 31 edn, vol. 75, Electrochemical Society Inc., pp. 11-23, Symposium on Photovoltaics for the 21st Century 12 - PRiME 2016/230th ECS Meeting, Honolulu, United States, 16/10/2. https://doi.org/10.1149/07S31.0011ecst
    Takazawa C, Fujita M, Hasegawa K, Lukianov A, Zhang X, Noda S et al. Nano-scalc smoothing of double layer porous Si substrates for detaching and fabricating low cost, high efficiency monocrystalline thin film Si solar cell by zone heating recrystallization. In Photovoltaics for the 21st Century 12. 31 ed. Vol. 75. Electrochemical Society Inc. 2016. p. 11-23 https://doi.org/10.1149/07S31.0011ecst
    Takazawa, Chiaki ; Fujita, Makoto ; Hasegawa, Kei ; Lukianov, Anatolli ; Zhang, Xiaomei ; Noda, Suguru ; Ihara, Manabu. / Nano-scalc smoothing of double layer porous Si substrates for detaching and fabricating low cost, high efficiency monocrystalline thin film Si solar cell by zone heating recrystallization. Photovoltaics for the 21st Century 12. Vol. 75 31. ed. Electrochemical Society Inc., 2016. pp. 11-23
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    abstract = "A fabrication process of monocrystalline thin films for Si solar cells was developed that uses epitaxial growth and layer transfer process for low fabrication cost and high photoelectric conversion efficiency. Fabrication of high crystalline epitaxial thin films requires controlling the surface roughness and pore size of the seed layer in nano-level, double layer porous Si (DLPS). By using this zone heating recrystallization (ZHR) method, in which the top surface of DLPS is selectively annealed by scanning upper lamp heater, we successfully reduced the surface roughness and pore size. By using the rapid vapor deposition (RVD) method, we fabricated an epitaxial monocrystalline Si thin film in 1 mm on the ZHR-treated DLPS and then easily detached this thin film from the substrate. The crystal distortion of epitaxial Si thin films can be controlled by using ZHR to smooth and change only the top surface of DLPS.",
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    AU - Fujita, Makoto

    AU - Hasegawa, Kei

    AU - Lukianov, Anatolli

    AU - Zhang, Xiaomei

    AU - Noda, Suguru

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