Nano-scalc smoothing of double layer porous Si substrates for detaching and fabricating low cost, high efficiency monocrystalline thin film Si solar cell by zone heating recrystallization

Chiaki Takazawa, Makoto Fujita, Kei Hasegawa, Anatolli Lukianov, Xiaomei Zhang, Suguru Noda, Manabu Ihara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A fabrication process of monocrystalline thin films for Si solar cells was developed that uses epitaxial growth and layer transfer process for low fabrication cost and high photoelectric conversion efficiency. Fabrication of high crystalline epitaxial thin films requires controlling the surface roughness and pore size of the seed layer in nano-level, double layer porous Si (DLPS). By using this zone heating recrystallization (ZHR) method, in which the top surface of DLPS is selectively annealed by scanning upper lamp heater, we successfully reduced the surface roughness and pore size. By using the rapid vapor deposition (RVD) method, we fabricated an epitaxial monocrystalline Si thin film in 1 mm on the ZHR-treated DLPS and then easily detached this thin film from the substrate. The crystal distortion of epitaxial Si thin films can be controlled by using ZHR to smooth and change only the top surface of DLPS.

Original languageEnglish
Title of host publicationPhotovoltaics for the 21st Century 12
EditorsM. Tao, J.-Y. Lee, P. J. Kulesza, H. S. Jung, T. Miyasaka, S. Hayase, H. Segawa, J. Fenton, M. J. Ko, R. Subramanian, J.-J. Lee, N. G. Park, J. H. Noh, H. Hamada
PublisherElectrochemical Society Inc.
Pages11-23
Number of pages13
Edition31
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2016
EventSymposium on Photovoltaics for the 21st Century 12 - PRiME 2016/230th ECS Meeting - Honolulu, United States
Duration: 2016 Oct 22016 Oct 7

Publication series

NameECS Transactions
Number31
Volume75
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

OtherSymposium on Photovoltaics for the 21st Century 12 - PRiME 2016/230th ECS Meeting
CountryUnited States
CityHonolulu
Period16/10/216/10/7

ASJC Scopus subject areas

  • Engineering(all)

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