Nano-structure Ge formed in thin film SiO2 using ion implantation

J. R. Phillips, Olof C. Hellman, Naoto Kobayashi, Yunosuke Makita, Hajime Shibata, A. Yamada, P. Fons, Yushin Tsai, Shigeru Niki, Masataka Hasegawa, Tsutomu Iida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

The preparation of amorphous insulating films containing nanometer-scaled structures of semiconductors has attracted increased attention since the observation of room temperature emission of light from films containing indirect-bandgap semiconductors such as Ge and Si. While most experimental reports on these Si and Ge nano-scale structures have been based on thin films created using sputter-deposition, in this study we have used conventional ion implantation of Ge to create the non-equilibrium mixture of materials that, upon annealing, develops a nano-crystallite phase embedded in the amorphous matrix. The presence of clusters that are difficult to image in TEM, in addition to microcrystallites, is an issue of interest since the source of light emission is still controversial. The second phase is formed from excess amounts of the semiconductor, in this case added by implantation. In this paper the formation and size distribution of the Ge nano-structures was characterized using Raman scattering and transmission electron microscopy (TEM). Similarly to reported sputtered film results, Raman spectra suggest Ge clusters that are not well formed crystallites may be present for anneals at low temperatures and in unannealed films. For annealing temperatures exceeding 600°C, a mixture of amorphous-like clustering and nano-crystallites may result, depending on the volume fraction of Ge. For low dose samples it was found that temperature and time of annealing could be used to manipulate the nucleation behavior of the nano-crystallites.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsAnthony F. Garito, Alex K-Y. Jen, Charles Y-C. Lee, Larry R. Dalton
Place of PublicationPittsburgh, PA, United States
PublisherPubl by Materials Research Society
Pages475-480
Number of pages6
Volume316
ISBN (Print)1558992154
Publication statusPublished - 1994
Externally publishedYes
EventProceedings of the MRS 1993 Fall Meeting - Boston, MA, USA
Duration: 1993 Nov 291993 Dec 3

Other

OtherProceedings of the MRS 1993 Fall Meeting
CityBoston, MA, USA
Period93/11/2993/12/3

Fingerprint

Ion implantation
Crystallites
Thin films
Annealing
Semiconductor materials
Raman scattering
Transmission electron microscopy
Temperature
Sputter deposition
Light emission
Volume fraction
Energy gap
Nucleation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Phillips, J. R., Hellman, O. C., Kobayashi, N., Makita, Y., Shibata, H., Yamada, A., ... Iida, T. (1994). Nano-structure Ge formed in thin film SiO2 using ion implantation. In A. F. Garito, A. K-Y. Jen, C. Y-C. Lee, & L. R. Dalton (Eds.), Materials Research Society Symposium Proceedings (Vol. 316, pp. 475-480). Pittsburgh, PA, United States: Publ by Materials Research Society.

Nano-structure Ge formed in thin film SiO2 using ion implantation. / Phillips, J. R.; Hellman, Olof C.; Kobayashi, Naoto; Makita, Yunosuke; Shibata, Hajime; Yamada, A.; Fons, P.; Tsai, Yushin; Niki, Shigeru; Hasegawa, Masataka; Iida, Tsutomu.

Materials Research Society Symposium Proceedings. ed. / Anthony F. Garito; Alex K-Y. Jen; Charles Y-C. Lee; Larry R. Dalton. Vol. 316 Pittsburgh, PA, United States : Publ by Materials Research Society, 1994. p. 475-480.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Phillips, JR, Hellman, OC, Kobayashi, N, Makita, Y, Shibata, H, Yamada, A, Fons, P, Tsai, Y, Niki, S, Hasegawa, M & Iida, T 1994, Nano-structure Ge formed in thin film SiO2 using ion implantation. in AF Garito, AK-Y Jen, CY-C Lee & LR Dalton (eds), Materials Research Society Symposium Proceedings. vol. 316, Publ by Materials Research Society, Pittsburgh, PA, United States, pp. 475-480, Proceedings of the MRS 1993 Fall Meeting, Boston, MA, USA, 93/11/29.
Phillips JR, Hellman OC, Kobayashi N, Makita Y, Shibata H, Yamada A et al. Nano-structure Ge formed in thin film SiO2 using ion implantation. In Garito AF, Jen AK-Y, Lee CY-C, Dalton LR, editors, Materials Research Society Symposium Proceedings. Vol. 316. Pittsburgh, PA, United States: Publ by Materials Research Society. 1994. p. 475-480
Phillips, J. R. ; Hellman, Olof C. ; Kobayashi, Naoto ; Makita, Yunosuke ; Shibata, Hajime ; Yamada, A. ; Fons, P. ; Tsai, Yushin ; Niki, Shigeru ; Hasegawa, Masataka ; Iida, Tsutomu. / Nano-structure Ge formed in thin film SiO2 using ion implantation. Materials Research Society Symposium Proceedings. editor / Anthony F. Garito ; Alex K-Y. Jen ; Charles Y-C. Lee ; Larry R. Dalton. Vol. 316 Pittsburgh, PA, United States : Publ by Materials Research Society, 1994. pp. 475-480
@inproceedings{eb05065de1874c06b2d364a057d9e787,
title = "Nano-structure Ge formed in thin film SiO2 using ion implantation",
abstract = "The preparation of amorphous insulating films containing nanometer-scaled structures of semiconductors has attracted increased attention since the observation of room temperature emission of light from films containing indirect-bandgap semiconductors such as Ge and Si. While most experimental reports on these Si and Ge nano-scale structures have been based on thin films created using sputter-deposition, in this study we have used conventional ion implantation of Ge to create the non-equilibrium mixture of materials that, upon annealing, develops a nano-crystallite phase embedded in the amorphous matrix. The presence of clusters that are difficult to image in TEM, in addition to microcrystallites, is an issue of interest since the source of light emission is still controversial. The second phase is formed from excess amounts of the semiconductor, in this case added by implantation. In this paper the formation and size distribution of the Ge nano-structures was characterized using Raman scattering and transmission electron microscopy (TEM). Similarly to reported sputtered film results, Raman spectra suggest Ge clusters that are not well formed crystallites may be present for anneals at low temperatures and in unannealed films. For annealing temperatures exceeding 600°C, a mixture of amorphous-like clustering and nano-crystallites may result, depending on the volume fraction of Ge. For low dose samples it was found that temperature and time of annealing could be used to manipulate the nucleation behavior of the nano-crystallites.",
author = "Phillips, {J. R.} and Hellman, {Olof C.} and Naoto Kobayashi and Yunosuke Makita and Hajime Shibata and A. Yamada and P. Fons and Yushin Tsai and Shigeru Niki and Masataka Hasegawa and Tsutomu Iida",
year = "1994",
language = "English",
isbn = "1558992154",
volume = "316",
pages = "475--480",
editor = "Garito, {Anthony F.} and Jen, {Alex K-Y.} and Lee, {Charles Y-C.} and Dalton, {Larry R.}",
booktitle = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",

}

TY - GEN

T1 - Nano-structure Ge formed in thin film SiO2 using ion implantation

AU - Phillips, J. R.

AU - Hellman, Olof C.

AU - Kobayashi, Naoto

AU - Makita, Yunosuke

AU - Shibata, Hajime

AU - Yamada, A.

AU - Fons, P.

AU - Tsai, Yushin

AU - Niki, Shigeru

AU - Hasegawa, Masataka

AU - Iida, Tsutomu

PY - 1994

Y1 - 1994

N2 - The preparation of amorphous insulating films containing nanometer-scaled structures of semiconductors has attracted increased attention since the observation of room temperature emission of light from films containing indirect-bandgap semiconductors such as Ge and Si. While most experimental reports on these Si and Ge nano-scale structures have been based on thin films created using sputter-deposition, in this study we have used conventional ion implantation of Ge to create the non-equilibrium mixture of materials that, upon annealing, develops a nano-crystallite phase embedded in the amorphous matrix. The presence of clusters that are difficult to image in TEM, in addition to microcrystallites, is an issue of interest since the source of light emission is still controversial. The second phase is formed from excess amounts of the semiconductor, in this case added by implantation. In this paper the formation and size distribution of the Ge nano-structures was characterized using Raman scattering and transmission electron microscopy (TEM). Similarly to reported sputtered film results, Raman spectra suggest Ge clusters that are not well formed crystallites may be present for anneals at low temperatures and in unannealed films. For annealing temperatures exceeding 600°C, a mixture of amorphous-like clustering and nano-crystallites may result, depending on the volume fraction of Ge. For low dose samples it was found that temperature and time of annealing could be used to manipulate the nucleation behavior of the nano-crystallites.

AB - The preparation of amorphous insulating films containing nanometer-scaled structures of semiconductors has attracted increased attention since the observation of room temperature emission of light from films containing indirect-bandgap semiconductors such as Ge and Si. While most experimental reports on these Si and Ge nano-scale structures have been based on thin films created using sputter-deposition, in this study we have used conventional ion implantation of Ge to create the non-equilibrium mixture of materials that, upon annealing, develops a nano-crystallite phase embedded in the amorphous matrix. The presence of clusters that are difficult to image in TEM, in addition to microcrystallites, is an issue of interest since the source of light emission is still controversial. The second phase is formed from excess amounts of the semiconductor, in this case added by implantation. In this paper the formation and size distribution of the Ge nano-structures was characterized using Raman scattering and transmission electron microscopy (TEM). Similarly to reported sputtered film results, Raman spectra suggest Ge clusters that are not well formed crystallites may be present for anneals at low temperatures and in unannealed films. For annealing temperatures exceeding 600°C, a mixture of amorphous-like clustering and nano-crystallites may result, depending on the volume fraction of Ge. For low dose samples it was found that temperature and time of annealing could be used to manipulate the nucleation behavior of the nano-crystallites.

UR - http://www.scopus.com/inward/record.url?scp=0028320155&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028320155&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0028320155

SN - 1558992154

VL - 316

SP - 475

EP - 480

BT - Materials Research Society Symposium Proceedings

A2 - Garito, Anthony F.

A2 - Jen, Alex K-Y.

A2 - Lee, Charles Y-C.

A2 - Dalton, Larry R.

PB - Publ by Materials Research Society

CY - Pittsburgh, PA, United States

ER -