Nanometer-scale selective-area GaAs growth on nitrogen-passivated surfaces using STM and MOMBE

Makoto Kasu, Toshiki Makimoto, Naoki Kobayashi

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Abstract

A selective-area GaAs growth technique in a nanometer scale has been demonstrated by a combination of nitrogen (N)-passivation mask formation, ultra-high-vacuum scanning-tunneling-microscopy (STM) pattern modification, and metalorganic molecular beam epitaxy (MOMBE). GaAs(001) surfaces were passivated with N radicals dissociated from N2 molecules, and were modified by STM in a nanometer scale, and on the surface GaAs nanostructures were grown using trimethylgallium and tertiarybutylarsine. Uniform 6 nm-high, 50 × 50 nm2 dots were formed on the STM-modified areas, where the underlying GaAs layer appeared.

Original languageEnglish
Pages (from-to)589-591
Number of pages3
JournalJournal of Crystal Growth
Volume173
Issue number3-4
Publication statusPublished - 1997 Apr
Externally publishedYes

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ASJC Scopus subject areas

  • Condensed Matter Physics

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