Nanometer-scale selective-area GaAs growth on nitrogen-passivated surfaces using STM and MOMBE

Makoto Kasu, Toshiki Makimoto, Naoki Kobayashi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A selective-area GaAs growth technique in a nanometer scale has been demonstrated by a combination of nitrogen (N)-passivation mask formation, ultra-high-vacuum scanning-tunneling-microscopy (STM) pattern modification, and metalorganic molecular beam epitaxy (MOMBE). GaAs(001) surfaces were passivated with N radicals dissociated from N2 molecules, and were modified by STM in a nanometer scale, and on the surface GaAs nanostructures were grown using trimethylgallium and tertiarybutylarsine. Uniform 6 nm-high, 50 × 50 nm2 dots were formed on the STM-modified areas, where the underlying GaAs layer appeared.

Original languageEnglish
Pages (from-to)589-591
Number of pages3
JournalJournal of Crystal Growth
Volume173
Issue number3-4
Publication statusPublished - 1997 Apr
Externally publishedYes

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Scanning tunneling microscopy
Molecular beam epitaxy
scanning tunneling microscopy
Nitrogen
molecular beam epitaxy
nitrogen
Ultrahigh vacuum
Passivation
ultrahigh vacuum
passivity
Masks
Nanostructures
masks
Molecules
gallium arsenide
molecules

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Nanometer-scale selective-area GaAs growth on nitrogen-passivated surfaces using STM and MOMBE. / Kasu, Makoto; Makimoto, Toshiki; Kobayashi, Naoki.

In: Journal of Crystal Growth, Vol. 173, No. 3-4, 04.1997, p. 589-591.

Research output: Contribution to journalArticle

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