A selective-area GaAs growth technique in a nanometer scale has been demonstrated by a combination of nitrogen (N)-passivation mask formation, ultra-high-vacuum scanning-tunneling-microscopy (STM) pattern modification, and metalorganic molecular beam epitaxy (MOMBE). GaAs(001) surfaces were passivated with N radicals dissociated from N2 molecules, and were modified by STM in a nanometer scale, and on the surface GaAs nanostructures were grown using trimethylgallium and tertiarybutylarsine. Uniform 6 nm-high, 50 × 50 nm2 dots were formed on the STM-modified areas, where the underlying GaAs layer appeared.
|Number of pages||3|
|Journal||Journal of Crystal Growth|
|Publication status||Published - 1997 Apr|
ASJC Scopus subject areas
- Condensed Matter Physics