Nanometer-scale switches using copper sulfide

T. Sakamoto; H. Sunamura; H. Kawaura; T. Hasegawa; T. Nakayama; M. Aonob

doi:10.1063/1.1572964

Nanometer-scale switches using copper sulfide

T. Sakamoto^*, H. Sunamura, H. Kawaura, T. Hasegawa, T. Nakayama, M. Aonob

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

491 Citations (Scopus)

Abstract

A discussion about the performance of a nanometer-scale switch that uses a copper sulfide film was presented. The nanometer-scale switch consists of a copper sulfide film, which was a chalcogenide semiconductor, sandwiched between copper and metal electrodes. It was found that these switches were advantageous for nan-volatile memory elements due to their simple structure, scalability and low voltage operations.

Original language	English
Pages (from-to)	3032-3034
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	18
DOIs	https://doi.org/10.1063/1.1572964
Publication status	Published - 2003 May 5
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1572964

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abstract = "A discussion about the performance of a nanometer-scale switch that uses a copper sulfide film was presented. The nanometer-scale switch consists of a copper sulfide film, which was a chalcogenide semiconductor, sandwiched between copper and metal electrodes. It was found that these switches were advantageous for nan-volatile memory elements due to their simple structure, scalability and low voltage operations.",

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AU - Sakamoto, T.

AU - Sunamura, H.

AU - Kawaura, H.

AU - Hasegawa, T.

AU - Nakayama, T.

AU - Aonob, M.

PY - 2003/5/5

Y1 - 2003/5/5

N2 - A discussion about the performance of a nanometer-scale switch that uses a copper sulfide film was presented. The nanometer-scale switch consists of a copper sulfide film, which was a chalcogenide semiconductor, sandwiched between copper and metal electrodes. It was found that these switches were advantageous for nan-volatile memory elements due to their simple structure, scalability and low voltage operations.

AB - A discussion about the performance of a nanometer-scale switch that uses a copper sulfide film was presented. The nanometer-scale switch consists of a copper sulfide film, which was a chalcogenide semiconductor, sandwiched between copper and metal electrodes. It was found that these switches were advantageous for nan-volatile memory elements due to their simple structure, scalability and low voltage operations.

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Nanometer-scale switches using copper sulfide

Abstract

ASJC Scopus subject areas

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