Nanoscale patterning and selective growth of GaAs surfaces by ultra-high vacuum scanning tunneling microscopy

Makoto Kasu, Toshiki Makimoto, Naoki Kobayashi

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

After amorphous-like N-passivated GaAs surfaces with a low defect density are obtained as a mask layer for selective growth, nanometer scale patterning of the surfaces is achieved using ultra-high vacuum scanning tunneling microscopy to selectively depassivate surface N atoms. After patterning, GaAs dots with well-controlled size (typically 6 nm high and 50 x 50 nm2) can be successfully grown using trimethylgallium and tertiarybutylarsine in the specific area where the underlying GaAs layer appeared.

Original languageEnglish
Pages (from-to)3821-3826
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume36
Issue number6 SUPPL. B
Publication statusPublished - 1997 Jun 1
Externally publishedYes

Keywords

  • GaN
  • MOMBE
  • Passivation
  • Quantum dots
  • STM
  • Selective growth

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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