Nanoscale patterning and selective growth of GaAs surfaces by ultra-high vacuum scanning tunneling microscopy

Makoto Kasu, Toshiki Makimoto, Naoki Kobayashi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

After amorphous-like N-passivated GaAs surfaces with a low defect density are obtained as a mask layer for selective growth, nanometer scale patterning of the surfaces is achieved using ultra-high vacuum scanning tunneling microscopy to selectively depassivate surface N atoms. After patterning, GaAs dots with well-controlled size (typically 6 nm high and 50 x 50 nm2) can be successfully grown using trimethylgallium and tertiarybutylarsine in the specific area where the underlying GaAs layer appeared.

Original languageEnglish
Pages (from-to)3821-3826
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume36
Issue number6 SUPPL. B
Publication statusPublished - 1997 Jun
Externally publishedYes

Fingerprint

Ultrahigh vacuum
Scanning tunneling microscopy
ultrahigh vacuum
scanning tunneling microscopy
Defect density
Masks
masks
Atoms
defects
atoms

Keywords

  • GaN
  • MOMBE
  • Passivation
  • Quantum dots
  • Selective growth
  • STM

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

@article{5557595789834d68a99d8612f495c283,
title = "Nanoscale patterning and selective growth of GaAs surfaces by ultra-high vacuum scanning tunneling microscopy",
abstract = "After amorphous-like N-passivated GaAs surfaces with a low defect density are obtained as a mask layer for selective growth, nanometer scale patterning of the surfaces is achieved using ultra-high vacuum scanning tunneling microscopy to selectively depassivate surface N atoms. After patterning, GaAs dots with well-controlled size (typically 6 nm high and 50 x 50 nm2) can be successfully grown using trimethylgallium and tertiarybutylarsine in the specific area where the underlying GaAs layer appeared.",
keywords = "GaN, MOMBE, Passivation, Quantum dots, Selective growth, STM",
author = "Makoto Kasu and Toshiki Makimoto and Naoki Kobayashi",
year = "1997",
month = "6",
language = "English",
volume = "36",
pages = "3821--3826",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "6 SUPPL. B",

}

TY - JOUR

T1 - Nanoscale patterning and selective growth of GaAs surfaces by ultra-high vacuum scanning tunneling microscopy

AU - Kasu, Makoto

AU - Makimoto, Toshiki

AU - Kobayashi, Naoki

PY - 1997/6

Y1 - 1997/6

N2 - After amorphous-like N-passivated GaAs surfaces with a low defect density are obtained as a mask layer for selective growth, nanometer scale patterning of the surfaces is achieved using ultra-high vacuum scanning tunneling microscopy to selectively depassivate surface N atoms. After patterning, GaAs dots with well-controlled size (typically 6 nm high and 50 x 50 nm2) can be successfully grown using trimethylgallium and tertiarybutylarsine in the specific area where the underlying GaAs layer appeared.

AB - After amorphous-like N-passivated GaAs surfaces with a low defect density are obtained as a mask layer for selective growth, nanometer scale patterning of the surfaces is achieved using ultra-high vacuum scanning tunneling microscopy to selectively depassivate surface N atoms. After patterning, GaAs dots with well-controlled size (typically 6 nm high and 50 x 50 nm2) can be successfully grown using trimethylgallium and tertiarybutylarsine in the specific area where the underlying GaAs layer appeared.

KW - GaN

KW - MOMBE

KW - Passivation

KW - Quantum dots

KW - Selective growth

KW - STM

UR - http://www.scopus.com/inward/record.url?scp=3643113743&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3643113743&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:3643113743

VL - 36

SP - 3821

EP - 3826

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 6 SUPPL. B

ER -