Nanoscale selective-area GaAs growth by nitrogen surface passivation and STM surface modification

Makoto Kasu, Toshiki Makimoto, Naoki Kobayashi

Research output: Contribution to journalArticle

Abstract

A new selective-area GaAs growth technique on a nanometer scale is demonstrated by a combination of nitrogen (N) -passivation mask formation, scanning tunneling microscopy (STM) pattern modification, and metalorganic molecular beam epitaxy. GaAs (001) surfaces are passivated with N radicals dissociated from N2 molecules, and are modified by STM on a nanometer scale. GaAs nanostructures are grown on the surfaces using trimethylgallium and tertiarybutylarsenic. An array of uniform 6-nm-high and 50 × 50-nm2 dots was formed on the STM-modified areas. The advantages of the technique are that size-controlled nanostructures can be fabricated in specific positions and that the nanostructures formed are free from contamination because all processes are performed in a vacuum.

Original languageEnglish
Pages (from-to)603-608
Number of pages6
JournalShinku/Journal of the Vacuum Society of Japan
Volume39
Issue number11
Publication statusPublished - 1996
Externally publishedYes

Fingerprint

Scanning tunneling microscopy
Passivation
passivity
Surface treatment
scanning tunneling microscopy
Nanostructures
Nitrogen
nitrogen
Molecular beam epitaxy
Masks
contamination
Contamination
molecular beam epitaxy
masks
Vacuum
vacuum
Molecules
gallium arsenide
molecules

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces

Cite this

Nanoscale selective-area GaAs growth by nitrogen surface passivation and STM surface modification. / Kasu, Makoto; Makimoto, Toshiki; Kobayashi, Naoki.

In: Shinku/Journal of the Vacuum Society of Japan, Vol. 39, No. 11, 1996, p. 603-608.

Research output: Contribution to journalArticle

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