Nanosecond excitonic spin relaxation in cubic GaN

Atsushi Tackeuchi, Hirotaka Otake, Yusuke Ogawa, Takafumi Ushiyama, Taisuke Fujita, Fumiyoshi Takano, Hiro Akinaga

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    19 Citations (Scopus)


    The excitonic spin relaxation process in cubic GaN is observed by spin-dependent pump and probe reflectance measurements with subpicosecond time resolution. The spin polarization presents at temperatures lower than 100 K. The spin relaxation times at 15-75 K are found to be longer than 5 ns and short spin relaxation times on the picosecond order are not present. Although these long spin relaxation times are in striking contrast to the subpicosecond spin relaxation of A -band free excitons in hexagonal GaN, they are consistent with the dependence that spin relaxation time becomes longer for wider-band gap zinc blende semiconductors.

    Original languageEnglish
    Article number162114
    JournalApplied Physics Letters
    Issue number16
    Publication statusPublished - 2006 Apr 17


    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Tackeuchi, A., Otake, H., Ogawa, Y., Ushiyama, T., Fujita, T., Takano, F., & Akinaga, H. (2006). Nanosecond excitonic spin relaxation in cubic GaN. Applied Physics Letters, 88(16), [162114].