TY - GEN
T1 - Nanosecond fast switching processes observed in gapless-type, Ta2O5r-based atomic switches
AU - Tsuruoka, Tohru
AU - Hasegawa, Tsuyoshi
AU - Aono, Masakazu
N1 - Funding Information:
The authors would like to thank A. Ohi and T. Ohki for their assistance of the fabrication of the cell integrated into the CPW structure. This work was supported in part by the IKetani Science and Technology Foundation and JSPS KAKENHI Grant No. 24350278.
Publisher Copyright:
© 2015 Materials Research Society.
PY - 2015
Y1 - 2015
N2 - The switching speed of a Cu/Ta2O5/Pt atomic switch between a high-resistance (OFF) state and a low-resistance (ON) state was evaluated by transient current measurements under the application of a short voltage pulse. It was found that the SET time from the OFF state to the ON state decreased as low as 1 ns, and the RESET time from the ON state to the OFF state reached a few ns using moderate pulse amplitudes. The switching time depends strongly on the pulse amplitude and the cell resistance before applying a voltage pulse. This observation indicates that oxide-based atomic switches hold potential for fast-switching memory applications. It was also found that Cu nucleation on the Pt electrode is likely to the rate-limiting process determining the SET time and the REST time appears to be preferentially determined by thermochemical reaction.
AB - The switching speed of a Cu/Ta2O5/Pt atomic switch between a high-resistance (OFF) state and a low-resistance (ON) state was evaluated by transient current measurements under the application of a short voltage pulse. It was found that the SET time from the OFF state to the ON state decreased as low as 1 ns, and the RESET time from the ON state to the OFF state reached a few ns using moderate pulse amplitudes. The switching time depends strongly on the pulse amplitude and the cell resistance before applying a voltage pulse. This observation indicates that oxide-based atomic switches hold potential for fast-switching memory applications. It was also found that Cu nucleation on the Pt electrode is likely to the rate-limiting process determining the SET time and the REST time appears to be preferentially determined by thermochemical reaction.
UR - http://www.scopus.com/inward/record.url?scp=84964680226&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84964680226&partnerID=8YFLogxK
U2 - 10.1557/opl.2015.93
DO - 10.1557/opl.2015.93
M3 - Conference contribution
AN - SCOPUS:84964680226
T3 - Materials Research Society Symposium Proceedings
SP - 35
EP - 40
BT - Materials and Technology for Nonvolatile Memories
A2 - Hu, Guohan
A2 - Tokumitsu, Eisuke
A2 - Fujisaki, Yoshihisa
A2 - Dimitrakis, Panagiotis
PB - Materials Research Society
T2 - 2014 MRS Fall Meeting
Y2 - 30 November 2014 through 5 December 2014
ER -