Nanosecond fast switching processes observed in gapless-type, Ta2O5r-based atomic switches

Tohru Tsuruoka, Tsuyoshi Hasegawa, Masakazu Aono

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The switching speed of a Cu/Ta2O5/Pt atomic switch between a high-resistance (OFF) state and a low-resistance (ON) state was evaluated by transient current measurements under the application of a short voltage pulse. It was found that the SET time from the OFF state to the ON state decreased as low as 1 ns, and the RESET time from the ON state to the OFF state reached a few ns using moderate pulse amplitudes. The switching time depends strongly on the pulse amplitude and the cell resistance before applying a voltage pulse. This observation indicates that oxide-based atomic switches hold potential for fast-switching memory applications. It was also found that Cu nucleation on the Pt electrode is likely to the rate-limiting process determining the SET time and the REST time appears to be preferentially determined by thermochemical reaction.

Original languageEnglish
Title of host publicationMaterials and Technology for Nonvolatile Memories
EditorsGuohan Hu, Eisuke Tokumitsu, Yoshihisa Fujisaki, Panagiotis Dimitrakis
PublisherMaterials Research Society
Pages35-40
Number of pages6
ISBN (Electronic)9781605117065
DOIs
Publication statusPublished - 2015
Externally publishedYes
Event2014 MRS Fall Meeting - Boston, United States
Duration: 2014 Nov 302014 Dec 5

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1729
ISSN (Print)0272-9172

Other

Other2014 MRS Fall Meeting
CountryUnited States
CityBoston
Period14/11/3014/12/5

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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