Nanovoid formation through the annealing of amorphous Al2O 3 and WO3 films

R. Nakamura, T. Shudo, Akihiko Hirata, M. Ishimaru, H. Nakajima

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

A high density of nanovoids between 2 and 13 nm in size was produced during the crystallization process when amorphous Al2O3 and WO3, which are 20-30% lower in density than their crystalline phases, were annealed. By contrast, no formation or growth of nanovoids was observed during the crystallization of amorphous TiO2, which has a density 2% lower than its crystalline phase. These results suggest that large differences in density between amorphous and crystalline oxides can be utilized to produce nanoporous structures.

Original languageEnglish
Pages (from-to)197-200
Number of pages4
JournalScripta Materialia
Volume64
Issue number2
DOIs
Publication statusPublished - 2011 Jan 1
Externally publishedYes

Fingerprint

Annealing
Crystallization
Crystalline materials
annealing
crystallization
Oxides
oxides

Keywords

  • Amorphous
  • Crystallization
  • Nanoporous
  • Oxides
  • TEM

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Nanovoid formation through the annealing of amorphous Al2O 3 and WO3 films. / Nakamura, R.; Shudo, T.; Hirata, Akihiko; Ishimaru, M.; Nakajima, H.

In: Scripta Materialia, Vol. 64, No. 2, 01.01.2011, p. 197-200.

Research output: Contribution to journalArticle

Nakamura, R. ; Shudo, T. ; Hirata, Akihiko ; Ishimaru, M. ; Nakajima, H. / Nanovoid formation through the annealing of amorphous Al2O 3 and WO3 films. In: Scripta Materialia. 2011 ; Vol. 64, No. 2. pp. 197-200.
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