Narrow spectral linewidth of MBE-grown GaInAs/AlInAs MQW lasers in the 1.55 μm range

Yuichi Matsushima, Katsuyuki Utaka, Kazuo Sakai

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

GaInAs-AlInAs multi-quantum-well (MQW) lasers fabricated by molecular-beam epitaxy (MBE) on InP substrates are considered. Room-temperature CW operaton of ridge-type stripe MQW lasers was observed in the 1.55-μm wavelength range. Spectral behavior of the MQW lasers was investigated from the standpoint of the linewidth and chirping characteristics. The minimum value of the spectral linewidth was as narrow as 2.5 MHz at an outpower of 10 mW in a diode with a cavity length of 750 μm. Small chirping characteristics were also confirmed, in which 1.5-angstrom chirp width was observed at 1-GHz direct modulation with a modulation depth of 67%.

Original languageEnglish
Pages (from-to)1376-1380
Number of pages5
JournalIEEE Journal of Quantum Electronics
Volume25
Issue number6
DOIs
Publication statusPublished - 1989 Jun
Externally publishedYes

Fingerprint

Quantum well lasers
quantum well lasers
Molecular beam epitaxy
Linewidth
molecular beam epitaxy
Modulation
modulation
chirp
ridges
Diodes
diodes
Wavelength
cavities
room temperature
Substrates
wavelengths
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Narrow spectral linewidth of MBE-grown GaInAs/AlInAs MQW lasers in the 1.55 μm range. / Matsushima, Yuichi; Utaka, Katsuyuki; Sakai, Kazuo.

In: IEEE Journal of Quantum Electronics, Vol. 25, No. 6, 06.1989, p. 1376-1380.

Research output: Contribution to journalArticle

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