Narrow spectral linewidth of MBE-grown GaInAs/AlInAs MQW lasers in the 1.55 μm range

Yuichi Matsushima, Katsuyuki Utaka, Kazuo Sakai

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GaInAs-AlInAs multi-quantum-well (MQW) lasers fabricated by molecular-beam epitaxy (MBE) on InP substrates are considered. Room-temperature CW operaton of ridge-type stripe MQW lasers was observed in the 1.55-μm wavelength range. Spectral behavior of the MQW lasers was investigated from the standpoint of the linewidth and chirping characteristics. The minimum value of the spectral linewidth was as narrow as 2.5 MHz at an outpower of 10 mW in a diode with a cavity length of 750 μm. Small chirping characteristics were also confirmed, in which 1.5-angstrom chirp width was observed at 1-GHz direct modulation with a modulation depth of 67%.

Original languageEnglish
Pages (from-to)1376-1380
Number of pages5
JournalIEEE Journal of Quantum Electronics
Issue number6
Publication statusPublished - 1989 Jun
Externally publishedYes


ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

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