Narrow spectral linewidth of MBE-grown GaInAs/AlInAs MQW lasers in 1.55 μm range

Yuichi Matsushima, Katsuyuki Utaka, Kazuo Sakai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The spectral behavior of ridge-type GaInAs/AlInAs multi-quantum-well (MQW) lasers made by molecular beam epitaxy (MBE), which are capable of CW operation at room temperature, is reported. The wafers were grown by conventional metal-source MBE on Sn-doped (100) InP substrates. The n-type MQW active layer was composed of ten GaInAs wells and nine AlInAs barriers. The spectral linewidth was evaluated by a delayed self-homodyne scheme with a 3-km optical fiber. The measurements were carried out at 5°C stabilized within ±0.01°C. The minimum linewidth of 3.6 MHz was achieved at an output power of 7 mW. The effect of cavity length on the linewidth was also confirmed. At an output of 5 mW, a linewidth of about 3 MHz was obtained for a diode with a 750-μm cavity length. The results indicate that the MBE-grown wafers have good uniformity A small dynamic spectral linewidth (called chirping) is also demonstrated.

Original languageEnglish
Title of host publicationConf Dig 11th IEEE Int Semicond Laser Conf
Place of PublicationNew York, NY, USA
PublisherPubl by IEEE
Pages194-195
Number of pages2
Publication statusPublished - 1988
Externally publishedYes

Fingerprint

Quantum well lasers
Molecular beam epitaxy
Linewidth
Semiconductor quantum wells
Optical fibers
Diodes
Substrates
Metals
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Matsushima, Y., Utaka, K., & Sakai, K. (1988). Narrow spectral linewidth of MBE-grown GaInAs/AlInAs MQW lasers in 1.55 μm range. In Conf Dig 11th IEEE Int Semicond Laser Conf (pp. 194-195). New York, NY, USA: Publ by IEEE.

Narrow spectral linewidth of MBE-grown GaInAs/AlInAs MQW lasers in 1.55 μm range. / Matsushima, Yuichi; Utaka, Katsuyuki; Sakai, Kazuo.

Conf Dig 11th IEEE Int Semicond Laser Conf. New York, NY, USA : Publ by IEEE, 1988. p. 194-195.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Matsushima, Y, Utaka, K & Sakai, K 1988, Narrow spectral linewidth of MBE-grown GaInAs/AlInAs MQW lasers in 1.55 μm range. in Conf Dig 11th IEEE Int Semicond Laser Conf. Publ by IEEE, New York, NY, USA, pp. 194-195.
Matsushima Y, Utaka K, Sakai K. Narrow spectral linewidth of MBE-grown GaInAs/AlInAs MQW lasers in 1.55 μm range. In Conf Dig 11th IEEE Int Semicond Laser Conf. New York, NY, USA: Publ by IEEE. 1988. p. 194-195
Matsushima, Yuichi ; Utaka, Katsuyuki ; Sakai, Kazuo. / Narrow spectral linewidth of MBE-grown GaInAs/AlInAs MQW lasers in 1.55 μm range. Conf Dig 11th IEEE Int Semicond Laser Conf. New York, NY, USA : Publ by IEEE, 1988. pp. 194-195
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