Narrow Spectral Linewidth of MBE-Grown GalnAs / AlInAs MQW Lasers in the 1.55 μm Range

Yuichi Matsushima, Katsuyuki Utaka, Kazuo Sakai

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

GalnAs-AlInAs multiquantum well (MQW) lasers were successfully fabricated by molecular beam epitaxy (MBE) on InP substrates. Room-temperature CW operation of ridge-type stripe MQW lasers was confirmed in the 1.55 μm wavelength range. Spectral behaviors of the MQW lasers were investigated from the standpoint of the linewidth and chirping characteristics for the first time. An obtained minimum value of the spectral linewidth was as narrow as 2.5 MHz at an output power of 10 mW in a diode with a cavity length of 750 μm. Small chirping characteristics were also confirmed, in which 1.5 A chirp width was observed at 1 GHz direct modulation with a modulation depth of 67 percent.

Original languageEnglish
Pages (from-to)1376-1380
Number of pages5
JournalIEEE Journal of Quantum Electronics
Volume25
Issue number6
DOIs
Publication statusPublished - 1989 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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