Narrow spectral linewidth silicon photonic wavelength tunable laser diode for digital coherent communication system

Tomohiro Kita; Rui Tang; Hirohito Yamada

doi:10.1109/JSTQE.2016.2559418

Narrow spectral linewidth silicon photonic wavelength tunable laser diode for digital coherent communication system

Tomohiro Kita, Rui Tang, Hirohito Yamada

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

We demonstrated wavelength tunable laser diodes with Si-wire waveguide ring resonators as an external optical cavity. The footprint of the optical cavity including the semiconductor optical amplifier is as small as 0.8 mm × 0.6 mm which is less 1/10 of those made of silicon oxinitride material. Wavelength tuning range of approximately 55 nm was demonstrated, which covers entire L-band of the optical communication wavelength system. Furthermore, a spectral linewidth narrower than 100 kHz was obtained by optimizing the design of the external optical cavity. The optical nonlinearity of silicon is described and the influence on laser oscillation is also discussed.

Original language	English
Article number	7460878
Pages (from-to)	23-34
Number of pages	12
Journal	IEEE Journal of Selected Topics in Quantum Electronics
Volume	22
Issue number	6
DOIs	https://doi.org/10.1109/JSTQE.2016.2559418
Publication status	Published - 2016 Nov 1
Externally published	Yes

Keywords

Silicon photonics
resonator filters
semiconductor laser

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/JSTQE.2016.2559418

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abstract = "We demonstrated wavelength tunable laser diodes with Si-wire waveguide ring resonators as an external optical cavity. The footprint of the optical cavity including the semiconductor optical amplifier is as small as 0.8 mm × 0.6 mm which is less 1/10 of those made of silicon oxinitride material. Wavelength tuning range of approximately 55 nm was demonstrated, which covers entire L-band of the optical communication wavelength system. Furthermore, a spectral linewidth narrower than 100 kHz was obtained by optimizing the design of the external optical cavity. The optical nonlinearity of silicon is described and the influence on laser oscillation is also discussed.",

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author = "Tomohiro Kita and Rui Tang and Hirohito Yamada",

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AU - Kita, Tomohiro

AU - Tang, Rui

AU - Yamada, Hirohito

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Y1 - 2016/11/1

N2 - We demonstrated wavelength tunable laser diodes with Si-wire waveguide ring resonators as an external optical cavity. The footprint of the optical cavity including the semiconductor optical amplifier is as small as 0.8 mm × 0.6 mm which is less 1/10 of those made of silicon oxinitride material. Wavelength tuning range of approximately 55 nm was demonstrated, which covers entire L-band of the optical communication wavelength system. Furthermore, a spectral linewidth narrower than 100 kHz was obtained by optimizing the design of the external optical cavity. The optical nonlinearity of silicon is described and the influence on laser oscillation is also discussed.

AB - We demonstrated wavelength tunable laser diodes with Si-wire waveguide ring resonators as an external optical cavity. The footprint of the optical cavity including the semiconductor optical amplifier is as small as 0.8 mm × 0.6 mm which is less 1/10 of those made of silicon oxinitride material. Wavelength tuning range of approximately 55 nm was demonstrated, which covers entire L-band of the optical communication wavelength system. Furthermore, a spectral linewidth narrower than 100 kHz was obtained by optimizing the design of the external optical cavity. The optical nonlinearity of silicon is described and the influence on laser oscillation is also discussed.

KW - Silicon photonics

KW - resonator filters

KW - semiconductor laser

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Narrow spectral linewidth silicon photonic wavelength tunable laser diode for digital coherent communication system

Abstract

Keywords

ASJC Scopus subject areas

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