Abstract
We demonstrated wavelength tunable laser diodes with Si-wire waveguide ring resonators as an external optical cavity. The footprint of the optical cavity including the semiconductor optical amplifier is as small as 0.8 mm × 0.6 mm which is less 1/10 of those made of silicon oxinitride material. Wavelength tuning range of approximately 55 nm was demonstrated, which covers entire L-band of the optical communication wavelength system. Furthermore, a spectral linewidth narrower than 100 kHz was obtained by optimizing the design of the external optical cavity. The optical nonlinearity of silicon is described and the influence on laser oscillation is also discussed.
| Original language | English |
|---|---|
| Article number | 7460878 |
| Journal | IEEE Journal on Selected Topics in Quantum Electronics |
| Volume | 22 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2016 Nov 1 |
| Externally published | Yes |
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Keywords
- resonator filters
- semiconductor laser
- Silicon photonics
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
Cite this
Narrow spectral linewidth silicon photonic wavelength tunable laser diode for digital coherent communication system. / Kita, Tomohiro; Tang, Rui; Yamada, Hirohito.
In: IEEE Journal on Selected Topics in Quantum Electronics, Vol. 22, No. 6, 7460878, 01.11.2016.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Narrow spectral linewidth silicon photonic wavelength tunable laser diode for digital coherent communication system
AU - Kita, Tomohiro
AU - Tang, Rui
AU - Yamada, Hirohito
PY - 2016/11/1
Y1 - 2016/11/1
N2 - We demonstrated wavelength tunable laser diodes with Si-wire waveguide ring resonators as an external optical cavity. The footprint of the optical cavity including the semiconductor optical amplifier is as small as 0.8 mm × 0.6 mm which is less 1/10 of those made of silicon oxinitride material. Wavelength tuning range of approximately 55 nm was demonstrated, which covers entire L-band of the optical communication wavelength system. Furthermore, a spectral linewidth narrower than 100 kHz was obtained by optimizing the design of the external optical cavity. The optical nonlinearity of silicon is described and the influence on laser oscillation is also discussed.
AB - We demonstrated wavelength tunable laser diodes with Si-wire waveguide ring resonators as an external optical cavity. The footprint of the optical cavity including the semiconductor optical amplifier is as small as 0.8 mm × 0.6 mm which is less 1/10 of those made of silicon oxinitride material. Wavelength tuning range of approximately 55 nm was demonstrated, which covers entire L-band of the optical communication wavelength system. Furthermore, a spectral linewidth narrower than 100 kHz was obtained by optimizing the design of the external optical cavity. The optical nonlinearity of silicon is described and the influence on laser oscillation is also discussed.
KW - resonator filters
KW - semiconductor laser
KW - Silicon photonics
UR - http://www.scopus.com/inward/record.url?scp=84980324598&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84980324598&partnerID=8YFLogxK
U2 - 10.1109/JSTQE.2016.2559418
DO - 10.1109/JSTQE.2016.2559418
M3 - Article
AN - SCOPUS:84980324598
VL - 22
JO - IEEE Journal of Selected Topics in Quantum Electronics
JF - IEEE Journal of Selected Topics in Quantum Electronics
SN - 1077-260X
IS - 6
M1 - 7460878
ER -