Near-1.3-^m high-intensity photoluminescence at room temperature by inas/gaas multi-coupled quantum dots

Atsushi Tackeuchi, Yoshiaki Nakata, Shunichi Muto, Yoshihiro Sugiyama, Tsuguo Inata, Naoki Yokoyama

Research output: Contribution to journalArticle

50 Citations (Scopus)

Abstract

We propose a new quantum dot system called multi-coupled quantum dots. In this system, since quantum dots couple with adjacent dots, the photoexcited carriers tunnel into the larger quantum dots which have lower energy states. This energy relaxation results in narrower and stronger photoluminescence than with conventional quantum dots. InAs/GaAs self-organized multi-coupled quantum dots show strong photoluminescence near 1.3 /дп at room temperature, whose intensity is as large as in the well-known highly efficient InGaAs/GaAs quantum wells.

Original languageEnglish
Pages (from-to)L405-L407
JournalJapanese Journal of Applied Physics
Volume34
Issue number4
DOIs
Publication statusPublished - 1995
Externally publishedYes

Fingerprint

Semiconductor quantum dots
Photoluminescence
quantum dots
photoluminescence
room temperature
Temperature
Electron energy levels
Semiconductor quantum wells
tunnels
Tunnels
quantum wells
energy

Keywords

  • 1.3 pm
  • Photoluminescence
  • Quantum box
  • Quantum dot
  • Tunnel

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Near-1.3-^m high-intensity photoluminescence at room temperature by inas/gaas multi-coupled quantum dots. / Tackeuchi, Atsushi; Nakata, Yoshiaki; Muto, Shunichi; Sugiyama, Yoshihiro; Inata, Tsuguo; Yokoyama, Naoki.

In: Japanese Journal of Applied Physics, Vol. 34, No. 4, 1995, p. L405-L407.

Research output: Contribution to journalArticle

Tackeuchi, Atsushi ; Nakata, Yoshiaki ; Muto, Shunichi ; Sugiyama, Yoshihiro ; Inata, Tsuguo ; Yokoyama, Naoki. / Near-1.3-^m high-intensity photoluminescence at room temperature by inas/gaas multi-coupled quantum dots. In: Japanese Journal of Applied Physics. 1995 ; Vol. 34, No. 4. pp. L405-L407.
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