Near EF electronic structure of heavily boron-doped superconducting diamond

H. Okazaki, T. Yokoya, J. Nakamura, N. Yamada, T. Nakamura, T. Muro, Y. Tamenori, T. Matsushita, Y. Takata, T. Tokushima, S. Shin, Y. Takano, M. Nagao, T. Takenouchi, Hiroshi Kawarada, T. Oguchi

    Research output: Contribution to journalArticle

    7 Citations (Scopus)

    Abstract

    We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES) of a heavily boron-doped superconducting diamond film (Tc=7.2 K) in order to study the electronic structure near the Fermi level (EF). Careful determination of measured momentum space that across Γ point in the Brillouin zone (BZ) and increase of an energy resolution provide further spectroscopic evidence that EF is located at the highly dispersive diamond-like bands, indicating that holes at the top of the diamond-like valence band play an essential role for the conducting properties of the heavily boron-doped superconducting diamond for this boron-doping region (effective carrier concentration of 1.6%). The SXARPES intensities at EF were also mapped out over BZ to obtain experimental Fermi surface sheets and compared with calculations. Crown

    Original languageEnglish
    Pages (from-to)2978-2981
    Number of pages4
    JournalJournal of Physics and Chemistry of Solids
    Volume69
    Issue number12
    DOIs
    Publication statusPublished - 2008 Dec

    Fingerprint

    Diamond
    Boron
    Electronic structure
    Diamonds
    boron
    diamonds
    Photoelectron spectroscopy
    electronic structure
    Brillouin zones
    photoelectric emission
    X rays
    Superconducting films
    Fermi surface
    Diamond films
    Valence bands
    Fermi level
    diamond films
    spectroscopy
    Fermi surfaces
    Carrier concentration

    Keywords

    • C. Photoelectron spectroscopy
    • D. Electronic structure
    • D. Fermi surface
    • D. Superconductivity

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Chemistry(all)
    • Materials Science(all)

    Cite this

    Okazaki, H., Yokoya, T., Nakamura, J., Yamada, N., Nakamura, T., Muro, T., ... Oguchi, T. (2008). Near EF electronic structure of heavily boron-doped superconducting diamond. Journal of Physics and Chemistry of Solids, 69(12), 2978-2981. https://doi.org/10.1016/j.jpcs.2008.06.006

    Near EF electronic structure of heavily boron-doped superconducting diamond. / Okazaki, H.; Yokoya, T.; Nakamura, J.; Yamada, N.; Nakamura, T.; Muro, T.; Tamenori, Y.; Matsushita, T.; Takata, Y.; Tokushima, T.; Shin, S.; Takano, Y.; Nagao, M.; Takenouchi, T.; Kawarada, Hiroshi; Oguchi, T.

    In: Journal of Physics and Chemistry of Solids, Vol. 69, No. 12, 12.2008, p. 2978-2981.

    Research output: Contribution to journalArticle

    Okazaki, H, Yokoya, T, Nakamura, J, Yamada, N, Nakamura, T, Muro, T, Tamenori, Y, Matsushita, T, Takata, Y, Tokushima, T, Shin, S, Takano, Y, Nagao, M, Takenouchi, T, Kawarada, H & Oguchi, T 2008, 'Near EF electronic structure of heavily boron-doped superconducting diamond', Journal of Physics and Chemistry of Solids, vol. 69, no. 12, pp. 2978-2981. https://doi.org/10.1016/j.jpcs.2008.06.006
    Okazaki, H. ; Yokoya, T. ; Nakamura, J. ; Yamada, N. ; Nakamura, T. ; Muro, T. ; Tamenori, Y. ; Matsushita, T. ; Takata, Y. ; Tokushima, T. ; Shin, S. ; Takano, Y. ; Nagao, M. ; Takenouchi, T. ; Kawarada, Hiroshi ; Oguchi, T. / Near EF electronic structure of heavily boron-doped superconducting diamond. In: Journal of Physics and Chemistry of Solids. 2008 ; Vol. 69, No. 12. pp. 2978-2981.
    @article{0c0af7ef14834cc29a10e4a2f85ad04d,
    title = "Near EF electronic structure of heavily boron-doped superconducting diamond",
    abstract = "We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES) of a heavily boron-doped superconducting diamond film (Tc=7.2 K) in order to study the electronic structure near the Fermi level (EF). Careful determination of measured momentum space that across Γ point in the Brillouin zone (BZ) and increase of an energy resolution provide further spectroscopic evidence that EF is located at the highly dispersive diamond-like bands, indicating that holes at the top of the diamond-like valence band play an essential role for the conducting properties of the heavily boron-doped superconducting diamond for this boron-doping region (effective carrier concentration of 1.6{\%}). The SXARPES intensities at EF were also mapped out over BZ to obtain experimental Fermi surface sheets and compared with calculations. Crown",
    keywords = "C. Photoelectron spectroscopy, D. Electronic structure, D. Fermi surface, D. Superconductivity",
    author = "H. Okazaki and T. Yokoya and J. Nakamura and N. Yamada and T. Nakamura and T. Muro and Y. Tamenori and T. Matsushita and Y. Takata and T. Tokushima and S. Shin and Y. Takano and M. Nagao and T. Takenouchi and Hiroshi Kawarada and T. Oguchi",
    year = "2008",
    month = "12",
    doi = "10.1016/j.jpcs.2008.06.006",
    language = "English",
    volume = "69",
    pages = "2978--2981",
    journal = "Journal of Physics and Chemistry of Solids",
    issn = "0022-3697",
    publisher = "Elsevier Limited",
    number = "12",

    }

    TY - JOUR

    T1 - Near EF electronic structure of heavily boron-doped superconducting diamond

    AU - Okazaki, H.

    AU - Yokoya, T.

    AU - Nakamura, J.

    AU - Yamada, N.

    AU - Nakamura, T.

    AU - Muro, T.

    AU - Tamenori, Y.

    AU - Matsushita, T.

    AU - Takata, Y.

    AU - Tokushima, T.

    AU - Shin, S.

    AU - Takano, Y.

    AU - Nagao, M.

    AU - Takenouchi, T.

    AU - Kawarada, Hiroshi

    AU - Oguchi, T.

    PY - 2008/12

    Y1 - 2008/12

    N2 - We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES) of a heavily boron-doped superconducting diamond film (Tc=7.2 K) in order to study the electronic structure near the Fermi level (EF). Careful determination of measured momentum space that across Γ point in the Brillouin zone (BZ) and increase of an energy resolution provide further spectroscopic evidence that EF is located at the highly dispersive diamond-like bands, indicating that holes at the top of the diamond-like valence band play an essential role for the conducting properties of the heavily boron-doped superconducting diamond for this boron-doping region (effective carrier concentration of 1.6%). The SXARPES intensities at EF were also mapped out over BZ to obtain experimental Fermi surface sheets and compared with calculations. Crown

    AB - We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES) of a heavily boron-doped superconducting diamond film (Tc=7.2 K) in order to study the electronic structure near the Fermi level (EF). Careful determination of measured momentum space that across Γ point in the Brillouin zone (BZ) and increase of an energy resolution provide further spectroscopic evidence that EF is located at the highly dispersive diamond-like bands, indicating that holes at the top of the diamond-like valence band play an essential role for the conducting properties of the heavily boron-doped superconducting diamond for this boron-doping region (effective carrier concentration of 1.6%). The SXARPES intensities at EF were also mapped out over BZ to obtain experimental Fermi surface sheets and compared with calculations. Crown

    KW - C. Photoelectron spectroscopy

    KW - D. Electronic structure

    KW - D. Fermi surface

    KW - D. Superconductivity

    UR - http://www.scopus.com/inward/record.url?scp=57049116159&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=57049116159&partnerID=8YFLogxK

    U2 - 10.1016/j.jpcs.2008.06.006

    DO - 10.1016/j.jpcs.2008.06.006

    M3 - Article

    VL - 69

    SP - 2978

    EP - 2981

    JO - Journal of Physics and Chemistry of Solids

    JF - Journal of Physics and Chemistry of Solids

    SN - 0022-3697

    IS - 12

    ER -