Near EF electronic structure of heavily boron-doped superconducting diamond

H. Okazaki*, T. Yokoya, J. Nakamura, N. Yamada, T. Nakamura, T. Muro, Y. Tamenori, T. Matsushita, Y. Takata, T. Tokushima, S. Shin, Y. Takano, M. Nagao, T. Takenouchi, H. Kawarada, T. Oguchi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES) of a heavily boron-doped superconducting diamond film (Tc=7.2 K) in order to study the electronic structure near the Fermi level (EF). Careful determination of measured momentum space that across Γ point in the Brillouin zone (BZ) and increase of an energy resolution provide further spectroscopic evidence that EF is located at the highly dispersive diamond-like bands, indicating that holes at the top of the diamond-like valence band play an essential role for the conducting properties of the heavily boron-doped superconducting diamond for this boron-doping region (effective carrier concentration of 1.6%). The SXARPES intensities at EF were also mapped out over BZ to obtain experimental Fermi surface sheets and compared with calculations. Crown

Original languageEnglish
Pages (from-to)2978-2981
Number of pages4
JournalJournal of Physics and Chemistry of Solids
Issue number12
Publication statusPublished - 2008 Dec


  • C. Photoelectron spectroscopy
  • D. Electronic structure
  • D. Fermi surface
  • D. Superconductivity

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics


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