Abstract
This paper proposes new applications of a sinusoidally driven InGaAsP electroabsorption modulator to an inline optical gate for a 2R (reshape and retiming) repeater in optical amplifier systems, an n:1 optical demultiplexer in time division multiplexing systems, and an optical switching. Small polarization dependence of the modulator is essentially important for in-line use. By utilizing the monotonic increase of the extinction ratio with increasing the applied voltage, the electroabsorption modulator driven by large-signal sinusoidal voltage can produce a time domain square-shaped gate function with variable gate width. Furthermore, amplified spontaneous emission noise of optical amplifier systems can be reduced in both time and wavelength domains at off-state of the modulator, due to a noninterferometric wide wavelength operation of the modulator. Experimental results for a 2R repeater, an n:1 (n = 4, 8) optical demultiplexer, and optical gates for switching are also demonstrated for the first time at over 10-Gb/s repetition rate.
| Original language | English |
|---|---|
| Pages (from-to) | 1912-1918 |
| Number of pages | 7 |
| Journal | Journal of Lightwave Technology |
| Volume | 10 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 1992 Dec |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics
Cite this
New applications of a sinusoidally driven InGaAsP electroabsorption modulator to in-line optical gates with ASE noise reduction effect. / Suzuki, Masatoshi; Tanaka, Hideaki; Edagawa, Noboru; Matsushima, Yuichi.
In: Journal of Lightwave Technology, Vol. 10, No. 12, 12.1992, p. 1912-1918.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - New applications of a sinusoidally driven InGaAsP electroabsorption modulator to in-line optical gates with ASE noise reduction effect
AU - Suzuki, Masatoshi
AU - Tanaka, Hideaki
AU - Edagawa, Noboru
AU - Matsushima, Yuichi
PY - 1992/12
Y1 - 1992/12
N2 - This paper proposes new applications of a sinusoidally driven InGaAsP electroabsorption modulator to an inline optical gate for a 2R (reshape and retiming) repeater in optical amplifier systems, an n:1 optical demultiplexer in time division multiplexing systems, and an optical switching. Small polarization dependence of the modulator is essentially important for in-line use. By utilizing the monotonic increase of the extinction ratio with increasing the applied voltage, the electroabsorption modulator driven by large-signal sinusoidal voltage can produce a time domain square-shaped gate function with variable gate width. Furthermore, amplified spontaneous emission noise of optical amplifier systems can be reduced in both time and wavelength domains at off-state of the modulator, due to a noninterferometric wide wavelength operation of the modulator. Experimental results for a 2R repeater, an n:1 (n = 4, 8) optical demultiplexer, and optical gates for switching are also demonstrated for the first time at over 10-Gb/s repetition rate.
AB - This paper proposes new applications of a sinusoidally driven InGaAsP electroabsorption modulator to an inline optical gate for a 2R (reshape and retiming) repeater in optical amplifier systems, an n:1 optical demultiplexer in time division multiplexing systems, and an optical switching. Small polarization dependence of the modulator is essentially important for in-line use. By utilizing the monotonic increase of the extinction ratio with increasing the applied voltage, the electroabsorption modulator driven by large-signal sinusoidal voltage can produce a time domain square-shaped gate function with variable gate width. Furthermore, amplified spontaneous emission noise of optical amplifier systems can be reduced in both time and wavelength domains at off-state of the modulator, due to a noninterferometric wide wavelength operation of the modulator. Experimental results for a 2R repeater, an n:1 (n = 4, 8) optical demultiplexer, and optical gates for switching are also demonstrated for the first time at over 10-Gb/s repetition rate.
UR - http://www.scopus.com/inward/record.url?scp=0026977472&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0026977472&partnerID=8YFLogxK
U2 - 10.1109/50.202817
DO - 10.1109/50.202817
M3 - Article
AN - SCOPUS:0026977472
VL - 10
SP - 1912
EP - 1918
JO - Journal of Lightwave Technology
JF - Journal of Lightwave Technology
SN - 0733-8724
IS - 12
ER -