NEW ARCHITECTURE OF NVRAM.

Yasushi Terada, Kazuo Kobayashi, Takeshi Nakayama, Hideaki Arima, Tsutomu Yoshihara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A cell concept appropriate to nonvolatile RAMs is introduced. It is based on the FLOTOX-type EEPROM (electrically erasable programmable ROM) cell to work as a dynamic RAM cell. Simulation and test device measurement results are presented.

Original languageEnglish
Title of host publicationDigest of Technical Papers - Symposium on VLSI Technology
PublisherJapan Soc of Applied Physics
Pages51-52
Number of pages2
Publication statusPublished - 1987
Externally publishedYes
EventDig Tech Pap Symp VLSI Technol 1987 - Karuizawa, Jpn
Duration: 1987 May 221987 May 23

Other

OtherDig Tech Pap Symp VLSI Technol 1987
CityKaruizawa, Jpn
Period87/5/2287/5/23

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Terada, Y., Kobayashi, K., Nakayama, T., Arima, H., & Yoshihara, T. (1987). NEW ARCHITECTURE OF NVRAM. In Digest of Technical Papers - Symposium on VLSI Technology (pp. 51-52). Japan Soc of Applied Physics.