Abstract
A cell concept appropriate to nonvolatile RAMs is introduced. It is based on the FLOTOX-type EEPROM (electrically erasable programmable ROM) cell to work as a dynamic RAM cell. Simulation and test device measurement results are presented.
| Original language | English |
|---|---|
| Title of host publication | Digest of Technical Papers - Symposium on VLSI Technology |
| Publisher | Japan Soc of Applied Physics |
| Pages | 51-52 |
| Number of pages | 2 |
| Publication status | Published - 1987 |
| Externally published | Yes |
| Event | Dig Tech Pap Symp VLSI Technol 1987 - Karuizawa, Jpn Duration: 1987 May 22 → 1987 May 23 |
Other
| Other | Dig Tech Pap Symp VLSI Technol 1987 |
|---|---|
| City | Karuizawa, Jpn |
| Period | 87/5/22 → 87/5/23 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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Cite this
Terada, Y., Kobayashi, K., Nakayama, T., Arima, H., & Yoshihara, T. (1987). NEW ARCHITECTURE OF NVRAM. In Digest of Technical Papers - Symposium on VLSI Technology (pp. 51-52). Japan Soc of Applied Physics.