NEW ARCHITECTURE OF NVRAM.

Yasushi Terada; Kazuo Kobayashi; Takeshi Nakayama; Hideaki Arima; Tsutomu Yoshihara

NEW ARCHITECTURE OF NVRAM.

Yasushi Terada, Kazuo Kobayashi, Takeshi Nakayama, Hideaki Arima, Tsutomu Yoshihara

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A cell concept appropriate to nonvolatile RAMs is introduced. It is based on the FLOTOX-type EEPROM (electrically erasable programmable ROM) cell to work as a dynamic RAM cell. Simulation and test device measurement results are presented.

Original language	English
Title of host publication	Digest of Technical Papers - Symposium on VLSI Technology
Publisher	Japan Soc of Applied Physics
Pages	51-52
Number of pages	2
Publication status	Published - 1987
Externally published	Yes
Event	Dig Tech Pap Symp VLSI Technol 1987 - Karuizawa, Jpn Duration: 1987 May 22 → 1987 May 23

Other

Other	Dig Tech Pap Symp VLSI Technol 1987
City	Karuizawa, Jpn
Period	87/5/22 → 87/5/23

ASJC Scopus subject areas

Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'NEW ARCHITECTURE OF NVRAM.'. Together they form a unique fingerprint.

Cite this

@inproceedings{9c18649d0c4543fa8d91fdbcf25c0e8e,

title = "NEW ARCHITECTURE OF NVRAM.",

abstract = "A cell concept appropriate to nonvolatile RAMs is introduced. It is based on the FLOTOX-type EEPROM (electrically erasable programmable ROM) cell to work as a dynamic RAM cell. Simulation and test device measurement results are presented.",

author = "Yasushi Terada and Kazuo Kobayashi and Takeshi Nakayama and Hideaki Arima and Tsutomu Yoshihara",

year = "1987",

language = "English",

pages = "51--52",

booktitle = "Digest of Technical Papers - Symposium on VLSI Technology",

publisher = "Japan Soc of Applied Physics",

note = "Dig Tech Pap Symp VLSI Technol 1987 ; Conference date: 22-05-1987 Through 23-05-1987",

}

TY - GEN

T1 - NEW ARCHITECTURE OF NVRAM.

AU - Terada, Yasushi

AU - Kobayashi, Kazuo

AU - Nakayama, Takeshi

AU - Arima, Hideaki

AU - Yoshihara, Tsutomu

PY - 1987

Y1 - 1987

N2 - A cell concept appropriate to nonvolatile RAMs is introduced. It is based on the FLOTOX-type EEPROM (electrically erasable programmable ROM) cell to work as a dynamic RAM cell. Simulation and test device measurement results are presented.

AB - A cell concept appropriate to nonvolatile RAMs is introduced. It is based on the FLOTOX-type EEPROM (electrically erasable programmable ROM) cell to work as a dynamic RAM cell. Simulation and test device measurement results are presented.

UR - http://www.scopus.com/inward/record.url?scp=0023539465&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0023539465&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0023539465

SP - 51

EP - 52

BT - Digest of Technical Papers - Symposium on VLSI Technology

PB - Japan Soc of Applied Physics

T2 - Dig Tech Pap Symp VLSI Technol 1987

Y2 - 22 May 1987 through 23 May 1987

ER -