Abstract
A cell concept appropriate to nonvolatile RAMs is introduced. It is based on the FLOTOX-type EEPROM (electrically erasable programmable ROM) cell to work as a dynamic RAM cell. Simulation and test device measurement results are presented.
Original language | English |
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Title of host publication | Digest of Technical Papers - Symposium on VLSI Technology |
Publisher | Japan Soc of Applied Physics |
Pages | 51-52 |
Number of pages | 2 |
Publication status | Published - 1987 |
Externally published | Yes |
Event | Dig Tech Pap Symp VLSI Technol 1987 - Karuizawa, Jpn Duration: 1987 May 22 → 1987 May 23 |
Other
Other | Dig Tech Pap Symp VLSI Technol 1987 |
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City | Karuizawa, Jpn |
Period | 87/5/22 → 87/5/23 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering