New buried channel FLASH memory cell with symmetrical source/drain structure for 64Mbit or beyond

H. Oda, S. Ueno, M. Inuishi, N. Tsubouchi

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Using the buried channel NMOSFET, the symmetrical source/drain structure for FLASH memory cell is developed. More channel hot electrons can be generated by using buried channel type NMOSFET, comparing with a conventional asymmetrical device. The result improved the injection efficiency of hot electrons, where high programming speed can be achieved.

Original languageEnglish
Pages (from-to)69-70
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
Publication statusPublished - 1994 Dec 1
EventProceedings of the 1994 Symposium on VLSI Technology - Honolulu, HI, USA
Duration: 1994 Jun 71994 Jun 9

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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