Using the buried channel NMOSFET, the symmetrical source/drain structure for FLASH memory cell is developed. More channel hot electrons can be generated by using buried channel type NMOSFET, comparing with a conventional asymmetrical device. The result improved the injection efficiency of hot electrons, where high programming speed can be achieved.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|Publication status||Published - 1994 Dec 1|
|Event||Proceedings of the 1994 Symposium on VLSI Technology - Honolulu, HI, USA|
Duration: 1994 Jun 7 → 1994 Jun 9
ASJC Scopus subject areas
- Electrical and Electronic Engineering