New buried channel FLASH memory cell with symmetrical source/drain structure for 64Mbit or beyond

H. Oda; S. Ueno; M. Inuishi; N. Tsubouchi

New buried channel FLASH memory cell with symmetrical source/drain structure for 64Mbit or beyond

H. Oda^*, S. Ueno, M. Inuishi, N. Tsubouchi

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

Using the buried channel NMOSFET, the symmetrical source/drain structure for FLASH memory cell is developed. More channel hot electrons can be generated by using buried channel type NMOSFET, comparing with a conventional asymmetrical device. The result improved the injection efficiency of hot electrons, where high programming speed can be achieved.

Original language	English
Pages (from-to)	69-70
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
Publication status	Published - 1994 Dec 1
Externally published	Yes
Event	Proceedings of the 1994 Symposium on VLSI Technology - Honolulu, HI, USA Duration: 1994 Jun 7 → 1994 Jun 9

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

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title = "New buried channel FLASH memory cell with symmetrical source/drain structure for 64Mbit or beyond",

abstract = "Using the buried channel NMOSFET, the symmetrical source/drain structure for FLASH memory cell is developed. More channel hot electrons can be generated by using buried channel type NMOSFET, comparing with a conventional asymmetrical device. The result improved the injection efficiency of hot electrons, where high programming speed can be achieved.",

author = "H. Oda and S. Ueno and M. Inuishi and N. Tsubouchi",

year = "1994",

month = dec,

day = "1",

language = "English",

pages = "69--70",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1994 Symposium on VLSI Technology ; Conference date: 07-06-1994 Through 09-06-1994",

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TY - JOUR

T1 - New buried channel FLASH memory cell with symmetrical source/drain structure for 64Mbit or beyond

AU - Oda, H.

AU - Ueno, S.

AU - Inuishi, M.

AU - Tsubouchi, N.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - Using the buried channel NMOSFET, the symmetrical source/drain structure for FLASH memory cell is developed. More channel hot electrons can be generated by using buried channel type NMOSFET, comparing with a conventional asymmetrical device. The result improved the injection efficiency of hot electrons, where high programming speed can be achieved.

AB - Using the buried channel NMOSFET, the symmetrical source/drain structure for FLASH memory cell is developed. More channel hot electrons can be generated by using buried channel type NMOSFET, comparing with a conventional asymmetrical device. The result improved the injection efficiency of hot electrons, where high programming speed can be achieved.

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UR - http://www.scopus.com/inward/citedby.url?scp=0028594656&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0028594656

SN - 0743-1562

SP - 69

EP - 70

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

T2 - Proceedings of the 1994 Symposium on VLSI Technology

Y2 - 7 June 1994 through 9 June 1994

ER -

New buried channel FLASH memory cell with symmetrical source/drain structure for 64Mbit or beyond

Abstract

ASJC Scopus subject areas

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