New cell technology for the scalable BST capacitor using damascene-formed pedestal electrode with a [Pt-Ir] alloy coating

H. Itoh; Y. Tsunemine; A. Yutani; T. Okudaira; K. Kashihara; M. Inuishi; M. Yamamuka; T. Kawahara; T. Horikawa; T. Ohmori; S. Satoh

New cell technology for the scalable BST capacitor using damascene-formed pedestal electrode with a [Pt-Ir] alloy coating

H. Itoh, Y. Tsunemine, A. Yutani, T. Okudaira, K. Kashihara, M. Inuishi, M. Yamamuka, T. Kawahara, T. Horikawa, T. Ohmori, S. Satoh

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

A scalabale pedestal cell technology has been successfully developed for the BST capacitor by introducing the damascene scheme into the pedestal electrode formation and by employing [Pt-Ir] alloy for coating the pedestal electrode. With a PVD-BST liner as the blanket nucleating layer and as the barrier layer against the destructive oxidant, the MOCVD-BST functions in prime condition on the storage node developed.

Original language	English
Pages (from-to)	106-107
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
Publication status	Published - 2000 Jan 1
Externally published	Yes
Event	2000 Symposium on VLSI Technology - Honolulu, HI, USA Duration: 2000 Jun 13 → 2000 Jun 15

ASJC Scopus subject areas

Electrical and Electronic Engineering

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New cell technology for the scalable BST capacitor using damascene-formed pedestal electrode with a [Pt-Ir] alloy coating. / Itoh, H.; Tsunemine, Y.; Yutani, A.; Okudaira, T.; Kashihara, K.; Inuishi, M.; Yamamuka, M.; Kawahara, T.; Horikawa, T.; Ohmori, T.; Satoh, S.

In: Digest of Technical Papers - Symposium on VLSI Technology, 01.01.2000, p. 106-107.

Research output: Contribution to journal › Conference article › peer-review

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abstract = "A scalabale pedestal cell technology has been successfully developed for the BST capacitor by introducing the damascene scheme into the pedestal electrode formation and by employing [Pt-Ir] alloy for coating the pedestal electrode. With a PVD-BST liner as the blanket nucleating layer and as the barrier layer against the destructive oxidant, the MOCVD-BST functions in prime condition on the storage node developed.",

author = "H. Itoh and Y. Tsunemine and A. Yutani and T. Okudaira and K. Kashihara and M. Inuishi and M. Yamamuka and T. Kawahara and T. Horikawa and T. Ohmori and S. Satoh",

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journal = "Digest of Technical Papers - Symposium on VLSI Technology",

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note = "2000 Symposium on VLSI Technology ; Conference date: 13-06-2000 Through 15-06-2000",

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T1 - New cell technology for the scalable BST capacitor using damascene-formed pedestal electrode with a [Pt-Ir] alloy coating

AU - Itoh, H.

AU - Tsunemine, Y.

AU - Yutani, A.

AU - Okudaira, T.

AU - Kashihara, K.

AU - Inuishi, M.

AU - Yamamuka, M.

AU - Kawahara, T.

AU - Horikawa, T.

AU - Ohmori, T.

AU - Satoh, S.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - A scalabale pedestal cell technology has been successfully developed for the BST capacitor by introducing the damascene scheme into the pedestal electrode formation and by employing [Pt-Ir] alloy for coating the pedestal electrode. With a PVD-BST liner as the blanket nucleating layer and as the barrier layer against the destructive oxidant, the MOCVD-BST functions in prime condition on the storage node developed.

AB - A scalabale pedestal cell technology has been successfully developed for the BST capacitor by introducing the damascene scheme into the pedestal electrode formation and by employing [Pt-Ir] alloy for coating the pedestal electrode. With a PVD-BST liner as the blanket nucleating layer and as the barrier layer against the destructive oxidant, the MOCVD-BST functions in prime condition on the storage node developed.

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M3 - Conference article

AN - SCOPUS:0033683019

SP - 106

EP - 107

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

SN - 0743-1562

T2 - 2000 Symposium on VLSI Technology

Y2 - 13 June 2000 through 15 June 2000

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