A scalabale pedestal cell technology has been successfully developed for the BST capacitor by introducing the damascene scheme into the pedestal electrode formation and by employing [Pt-Ir] alloy for coating the pedestal electrode. With a PVD-BST liner as the blanket nucleating layer and as the barrier layer against the destructive oxidant, the MOCVD-BST functions in prime condition on the storage node developed.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|Publication status||Published - 2000 Jan 1|
|Event||2000 Symposium on VLSI Technology - Honolulu, HI, USA|
Duration: 2000 Jun 13 → 2000 Jun 15
ASJC Scopus subject areas
- Electrical and Electronic Engineering