Abstract
A scalabale pedestal cell technology has been successfully developed for the BST capacitor by introducing the damascene scheme into the pedestal electrode formation and by employing [Pt-Ir] alloy for coating the pedestal electrode. With a PVD-BST liner as the blanket nucleating layer and as the barrier layer against the destructive oxidant, the MOCVD-BST functions in prime condition on the storage node developed.
Original language | English |
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Pages (from-to) | 106-107 |
Number of pages | 2 |
Journal | Digest of Technical Papers - Symposium on VLSI Technology |
Publication status | Published - 2000 |
Externally published | Yes |
Event | 2000 Symposium on VLSI Technology - Honolulu, HI, USA Duration: 2000 Jun 13 → 2000 Jun 15 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering