New dielectric nanomaterials fabricated from nanosheet technique

M. Osada, T. Sasaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We present a novel procedure for fabricating high-k nanodielectrics by using of perovskite nanosheet (Ca 2-xSr xNb 3O 10) as a building block. We synthesized Ca 2-xSr xNb 3O 10 nanosheets by delaminating layered perovskites (KCa 2-xSr xNb 3O 10), and fabricated multilayer nanofilms on atomically flat SrRuO 3and Pt substrates by Langmuir-Blodgett method. Various microscopy techniques showed highly ordered lamellar structures, and electron energy loss spectroscopy revealed no detectable interdiffusion and strains at the interface between the layers and substrate. These nanofilms showed both high dielectric constant (>200) and low leakage current (< 10 -7 A/cm 2) even in films less than 5 nm thick. Our work thus provides a new recipe for designing nanodielectrics desirable for future high-k devices.

Original languageEnglish
Title of host publicationECS Transactions
Pages3-8
Number of pages6
Volume45
Edition3
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting - Seattle, WA, United States
Duration: 2012 May 62012 May 10

Other

Other5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting
CountryUnited States
CitySeattle, WA
Period12/5/612/5/10

Fingerprint

Nanosheets
Nanostructured materials
Interdiffusion (solids)
Lamellar structures
Electron energy loss spectroscopy
Substrates
Leakage currents
Perovskite
Microscopic examination
Multilayers
Permittivity

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Osada, M., & Sasaki, T. (2012). New dielectric nanomaterials fabricated from nanosheet technique. In ECS Transactions (3 ed., Vol. 45, pp. 3-8) https://doi.org/10.1149/1.3700866

New dielectric nanomaterials fabricated from nanosheet technique. / Osada, M.; Sasaki, T.

ECS Transactions. Vol. 45 3. ed. 2012. p. 3-8.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Osada, M & Sasaki, T 2012, New dielectric nanomaterials fabricated from nanosheet technique. in ECS Transactions. 3 edn, vol. 45, pp. 3-8, 5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting, Seattle, WA, United States, 12/5/6. https://doi.org/10.1149/1.3700866
Osada M, Sasaki T. New dielectric nanomaterials fabricated from nanosheet technique. In ECS Transactions. 3 ed. Vol. 45. 2012. p. 3-8 https://doi.org/10.1149/1.3700866
Osada, M. ; Sasaki, T. / New dielectric nanomaterials fabricated from nanosheet technique. ECS Transactions. Vol. 45 3. ed. 2012. pp. 3-8
@inproceedings{d2c2596d7df84f718388804cb6ad000c,
title = "New dielectric nanomaterials fabricated from nanosheet technique",
abstract = "We present a novel procedure for fabricating high-k nanodielectrics by using of perovskite nanosheet (Ca 2-xSr xNb 3O 10) as a building block. We synthesized Ca 2-xSr xNb 3O 10 nanosheets by delaminating layered perovskites (KCa 2-xSr xNb 3O 10), and fabricated multilayer nanofilms on atomically flat SrRuO 3and Pt substrates by Langmuir-Blodgett method. Various microscopy techniques showed highly ordered lamellar structures, and electron energy loss spectroscopy revealed no detectable interdiffusion and strains at the interface between the layers and substrate. These nanofilms showed both high dielectric constant (>200) and low leakage current (< 10 -7 A/cm 2) even in films less than 5 nm thick. Our work thus provides a new recipe for designing nanodielectrics desirable for future high-k devices.",
author = "M. Osada and T. Sasaki",
year = "2012",
doi = "10.1149/1.3700866",
language = "English",
isbn = "9781566779555",
volume = "45",
pages = "3--8",
booktitle = "ECS Transactions",
edition = "3",

}

TY - GEN

T1 - New dielectric nanomaterials fabricated from nanosheet technique

AU - Osada, M.

AU - Sasaki, T.

PY - 2012

Y1 - 2012

N2 - We present a novel procedure for fabricating high-k nanodielectrics by using of perovskite nanosheet (Ca 2-xSr xNb 3O 10) as a building block. We synthesized Ca 2-xSr xNb 3O 10 nanosheets by delaminating layered perovskites (KCa 2-xSr xNb 3O 10), and fabricated multilayer nanofilms on atomically flat SrRuO 3and Pt substrates by Langmuir-Blodgett method. Various microscopy techniques showed highly ordered lamellar structures, and electron energy loss spectroscopy revealed no detectable interdiffusion and strains at the interface between the layers and substrate. These nanofilms showed both high dielectric constant (>200) and low leakage current (< 10 -7 A/cm 2) even in films less than 5 nm thick. Our work thus provides a new recipe for designing nanodielectrics desirable for future high-k devices.

AB - We present a novel procedure for fabricating high-k nanodielectrics by using of perovskite nanosheet (Ca 2-xSr xNb 3O 10) as a building block. We synthesized Ca 2-xSr xNb 3O 10 nanosheets by delaminating layered perovskites (KCa 2-xSr xNb 3O 10), and fabricated multilayer nanofilms on atomically flat SrRuO 3and Pt substrates by Langmuir-Blodgett method. Various microscopy techniques showed highly ordered lamellar structures, and electron energy loss spectroscopy revealed no detectable interdiffusion and strains at the interface between the layers and substrate. These nanofilms showed both high dielectric constant (>200) and low leakage current (< 10 -7 A/cm 2) even in films less than 5 nm thick. Our work thus provides a new recipe for designing nanodielectrics desirable for future high-k devices.

UR - http://www.scopus.com/inward/record.url?scp=84869054971&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84869054971&partnerID=8YFLogxK

U2 - 10.1149/1.3700866

DO - 10.1149/1.3700866

M3 - Conference contribution

AN - SCOPUS:84869054971

SN - 9781566779555

VL - 45

SP - 3

EP - 8

BT - ECS Transactions

ER -