Abstract
This review describes our recent works on the preparation of Ni-alloy films deposited by electroless deposition as a diffusion barrier layer for ultra large-scale integration (ULSI) interconnects by using an all-wet process. In this process, we create a novel wet fabrication process including a self-assembled monolayer (SAM) as an attachment technique between diffusion barrier layer and a substrate. Our proposal process was applied to the substrates of SiO2/Si and both organic (methyl silsesquioxane) and inorganic (hydrogen silsesquioxane) low-k dielectrics. The key technique of this proposed process is using SAM as a catalyst trapping layer. The Ni-alloy films such as NiB were deposited on catalyzed SiO2 or low-k substrates. The electrolessly deposited NiB films were found to exhibit sufficient thermal stability and an acceptable barrier property for preventing Cu diffusion into the SiO2 and low-k dielectrics.
| Original language | English |
|---|---|
| Pages (from-to) | 271-277 |
| Number of pages | 7 |
| Journal | Electrochimica Acta |
| Volume | 53 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2007 Dec 1 |
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Keywords
- Damascene process
- Diffusion barrier layer
- Electroless deposition
- Self-assembled monolayer
- ULSI
ASJC Scopus subject areas
- Chemical Engineering(all)
- Analytical Chemistry
- Electrochemistry
Cite this
New formation process of plating thin films on several substrates by means of self-assembled monolayer (SAM) process. / Osaka, Tetsuya; Yoshino, Masahiro.
In: Electrochimica Acta, Vol. 53, No. 2, 01.12.2007, p. 271-277.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - New formation process of plating thin films on several substrates by means of self-assembled monolayer (SAM) process
AU - Osaka, Tetsuya
AU - Yoshino, Masahiro
PY - 2007/12/1
Y1 - 2007/12/1
N2 - This review describes our recent works on the preparation of Ni-alloy films deposited by electroless deposition as a diffusion barrier layer for ultra large-scale integration (ULSI) interconnects by using an all-wet process. In this process, we create a novel wet fabrication process including a self-assembled monolayer (SAM) as an attachment technique between diffusion barrier layer and a substrate. Our proposal process was applied to the substrates of SiO2/Si and both organic (methyl silsesquioxane) and inorganic (hydrogen silsesquioxane) low-k dielectrics. The key technique of this proposed process is using SAM as a catalyst trapping layer. The Ni-alloy films such as NiB were deposited on catalyzed SiO2 or low-k substrates. The electrolessly deposited NiB films were found to exhibit sufficient thermal stability and an acceptable barrier property for preventing Cu diffusion into the SiO2 and low-k dielectrics.
AB - This review describes our recent works on the preparation of Ni-alloy films deposited by electroless deposition as a diffusion barrier layer for ultra large-scale integration (ULSI) interconnects by using an all-wet process. In this process, we create a novel wet fabrication process including a self-assembled monolayer (SAM) as an attachment technique between diffusion barrier layer and a substrate. Our proposal process was applied to the substrates of SiO2/Si and both organic (methyl silsesquioxane) and inorganic (hydrogen silsesquioxane) low-k dielectrics. The key technique of this proposed process is using SAM as a catalyst trapping layer. The Ni-alloy films such as NiB were deposited on catalyzed SiO2 or low-k substrates. The electrolessly deposited NiB films were found to exhibit sufficient thermal stability and an acceptable barrier property for preventing Cu diffusion into the SiO2 and low-k dielectrics.
KW - Damascene process
KW - Diffusion barrier layer
KW - Electroless deposition
KW - Self-assembled monolayer
KW - ULSI
UR - http://www.scopus.com/inward/record.url?scp=35148821894&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=35148821894&partnerID=8YFLogxK
U2 - 10.1016/j.electacta.2007.04.004
DO - 10.1016/j.electacta.2007.04.004
M3 - Article
AN - SCOPUS:35148821894
VL - 53
SP - 271
EP - 277
JO - Electrochimica Acta
JF - Electrochimica Acta
SN - 0013-4686
IS - 2
ER -