Abstract
This review describes our recent works on the preparation of Ni-alloy films deposited by electroless deposition as a diffusion barrier layer for ultra large-scale integration (ULSI) interconnects by using an all-wet process. In this process, we create a novel wet fabrication process including a self-assembled monolayer (SAM) as an attachment technique between diffusion barrier layer and a substrate. Our proposal process was applied to the substrates of SiO2/Si and both organic (methyl silsesquioxane) and inorganic (hydrogen silsesquioxane) low-k dielectrics. The key technique of this proposed process is using SAM as a catalyst trapping layer. The Ni-alloy films such as NiB were deposited on catalyzed SiO2 or low-k substrates. The electrolessly deposited NiB films were found to exhibit sufficient thermal stability and an acceptable barrier property for preventing Cu diffusion into the SiO2 and low-k dielectrics.
Original language | English |
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Pages (from-to) | 271-277 |
Number of pages | 7 |
Journal | Electrochimica Acta |
Volume | 53 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2007 Dec 1 |
Keywords
- Damascene process
- Diffusion barrier layer
- Electroless deposition
- Self-assembled monolayer
- ULSI
ASJC Scopus subject areas
- Chemical Engineering(all)
- Electrochemistry