New in-situ optical probing method with an atomic scale resolution for thin film deposition

surface photo-interference (SPI)

Y. Nakamura, T. Yamashita, Masakazu Kobayashi, Y. Kato, A. Yoshikawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new in-situ optical probing method with an atomic-scale resolution in thin film deposition and/or heteroepitaxial growth is proposed in this paper. The new method is named surface photo-interference (SPI) because it is essentially concerned with a photo-interference in the deposited layer. The principle of the SPI is as follows; the complex refractive indices of the atomic or molecular layers, which alternately appear on top of the surface during film deposition and/or heteroepitaxy, greatly affect the total phase-shift of probing light during propagation in the epilayer, resulting in the change in the photo-interference signal intensity. The experimental setup of the method is very similar to that for another optical probing method called surface photo-absorption (SPA), but the principle is quite different between those two. One of the features of the SPI is that the experimental setup is quite simple and inexpensive though it is quite useful in real time monitoring of the thin film deposition.

Original languageEnglish
Title of host publicationProceedings of the IEEE/CPMT International Electronic Manufacturing Technology (IEMT) Symposium
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages387-390
Number of pages4
Publication statusPublished - 1995
Externally publishedYes
EventProceedings of the 1995 IEEE/CPMT 18th International Electronic Manufacturing Technology - Omiya, Jpn
Duration: 1995 Dec 41995 Dec 6

Other

OtherProceedings of the 1995 IEEE/CPMT 18th International Electronic Manufacturing Technology
CityOmiya, Jpn
Period95/12/495/12/6

Fingerprint

Thin films
Epitaxial growth
Light propagation
Epilayers
Signal interference
Phase shift
Refractive index
Monitoring

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Nakamura, Y., Yamashita, T., Kobayashi, M., Kato, Y., & Yoshikawa, A. (1995). New in-situ optical probing method with an atomic scale resolution for thin film deposition: surface photo-interference (SPI). In Proceedings of the IEEE/CPMT International Electronic Manufacturing Technology (IEMT) Symposium (pp. 387-390). Piscataway, NJ, United States: IEEE.

New in-situ optical probing method with an atomic scale resolution for thin film deposition : surface photo-interference (SPI). / Nakamura, Y.; Yamashita, T.; Kobayashi, Masakazu; Kato, Y.; Yoshikawa, A.

Proceedings of the IEEE/CPMT International Electronic Manufacturing Technology (IEMT) Symposium. Piscataway, NJ, United States : IEEE, 1995. p. 387-390.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nakamura, Y, Yamashita, T, Kobayashi, M, Kato, Y & Yoshikawa, A 1995, New in-situ optical probing method with an atomic scale resolution for thin film deposition: surface photo-interference (SPI). in Proceedings of the IEEE/CPMT International Electronic Manufacturing Technology (IEMT) Symposium. IEEE, Piscataway, NJ, United States, pp. 387-390, Proceedings of the 1995 IEEE/CPMT 18th International Electronic Manufacturing Technology, Omiya, Jpn, 95/12/4.
Nakamura Y, Yamashita T, Kobayashi M, Kato Y, Yoshikawa A. New in-situ optical probing method with an atomic scale resolution for thin film deposition: surface photo-interference (SPI). In Proceedings of the IEEE/CPMT International Electronic Manufacturing Technology (IEMT) Symposium. Piscataway, NJ, United States: IEEE. 1995. p. 387-390
Nakamura, Y. ; Yamashita, T. ; Kobayashi, Masakazu ; Kato, Y. ; Yoshikawa, A. / New in-situ optical probing method with an atomic scale resolution for thin film deposition : surface photo-interference (SPI). Proceedings of the IEEE/CPMT International Electronic Manufacturing Technology (IEMT) Symposium. Piscataway, NJ, United States : IEEE, 1995. pp. 387-390
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