New measurement method of micro defects near the surface of Si wafers; optical shallow defect analyzer (OSDA)

Kazuo Takeda, Hidetsugu Ishida, Atsushi Hiraiwa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

To inspect quality of the surface region (the depth < 0.5μm) of Si wafer, where devices are to be fabricated, a new measurement method named Optical Shallow Defect Analyzer (OSDA) is developed. This method is based on light scattering at two wavelengths having different penetration depths in silicon. The system measures the depth distribution and the size distribution of defects near the surface by comparing intensities of the two scattered lights. The depth resolution of 0.1 μm, the high measuring throughput (total 6 inches φ surface area/1hr) and the minimum detectable defect size of 20 nm are achieved. The OSDA is a powerful measurement system for nondestructive quality check of silicon wafers. We first present the data of epitaxial grown-in defects in μm order thickness epitaxial layers about the defect densities, the size distribution and the depth distribution.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsJ. Michel, T. Kennedy, K. Wada, K. Thonke
PublisherMaterials Research Society
Pages37-42
Number of pages6
Volume442
Publication statusPublished - 1997
Externally publishedYes
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: 1996 Dec 21996 Dec 6

Other

OtherProceedings of the 1996 MRS Fall Meeting
CityBoston, MA, USA
Period96/12/296/12/6

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Takeda, K., Ishida, H., & Hiraiwa, A. (1997). New measurement method of micro defects near the surface of Si wafers; optical shallow defect analyzer (OSDA). In J. Michel, T. Kennedy, K. Wada, & K. Thonke (Eds.), Materials Research Society Symposium - Proceedings (Vol. 442, pp. 37-42). Materials Research Society.