Abstract
The discovery of a new poly(3,4-ethylenedioxythiophene) (PEDOT) composite with unique memory characteristics has led to the demonstration of durable Organic ElectroChemical Transistors (OECT) based memory devices. The composites of PEDOT with polytetrahydrofuran undergo a structural collapse during electrochemical reduction that requires approximately 800 mV overpotential to re-open and is thus hindering the re-oxidation of the composite. This effect causes the composite at intermediate potentials to be able to have two different oxidation states and thereby resistances, depending on the "on" or "off " switching potential applied prior to the intermediate potential. Notably, this hysteresis is lasting over time and no drift has been observed. Impedance spectroscopy, in-situ UV-Vis spectroscopy, conductivity measurement, in-situ electrochemical quartz crystal microbalance, and differential scanning calorimetry were used to confirm and explain the switching memory phenomena. The OECT platform was used to validate the PEDOT:PTHF as a one-pot memory source-drain material where a threefold increase in drain current was observed between "off " and "on" mode of the transistor after modulation of the Ag/AgCl gate.
| Original language | English |
|---|---|
| Article number | 014903 |
| Journal | APL Materials |
| Volume | 3 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2015 Jan 1 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Materials Science(all)
- Engineering(all)
Cite this
New one-pot poly(3,4-ethylenedioxythiophene) : Poly(tetrahydrofuran) memory material for facile fabrication of memory organic electrochemical transistors. / Winther Jensen, Bjorn; Kolodziejczyk, Bartlomiej; Winther-Jensen, Orawan.
In: APL Materials, Vol. 3, No. 1, 014903, 01.01.2015.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - New one-pot poly(3,4-ethylenedioxythiophene)
T2 - Poly(tetrahydrofuran) memory material for facile fabrication of memory organic electrochemical transistors
AU - Winther Jensen, Bjorn
AU - Kolodziejczyk, Bartlomiej
AU - Winther-Jensen, Orawan
PY - 2015/1/1
Y1 - 2015/1/1
N2 - The discovery of a new poly(3,4-ethylenedioxythiophene) (PEDOT) composite with unique memory characteristics has led to the demonstration of durable Organic ElectroChemical Transistors (OECT) based memory devices. The composites of PEDOT with polytetrahydrofuran undergo a structural collapse during electrochemical reduction that requires approximately 800 mV overpotential to re-open and is thus hindering the re-oxidation of the composite. This effect causes the composite at intermediate potentials to be able to have two different oxidation states and thereby resistances, depending on the "on" or "off " switching potential applied prior to the intermediate potential. Notably, this hysteresis is lasting over time and no drift has been observed. Impedance spectroscopy, in-situ UV-Vis spectroscopy, conductivity measurement, in-situ electrochemical quartz crystal microbalance, and differential scanning calorimetry were used to confirm and explain the switching memory phenomena. The OECT platform was used to validate the PEDOT:PTHF as a one-pot memory source-drain material where a threefold increase in drain current was observed between "off " and "on" mode of the transistor after modulation of the Ag/AgCl gate.
AB - The discovery of a new poly(3,4-ethylenedioxythiophene) (PEDOT) composite with unique memory characteristics has led to the demonstration of durable Organic ElectroChemical Transistors (OECT) based memory devices. The composites of PEDOT with polytetrahydrofuran undergo a structural collapse during electrochemical reduction that requires approximately 800 mV overpotential to re-open and is thus hindering the re-oxidation of the composite. This effect causes the composite at intermediate potentials to be able to have two different oxidation states and thereby resistances, depending on the "on" or "off " switching potential applied prior to the intermediate potential. Notably, this hysteresis is lasting over time and no drift has been observed. Impedance spectroscopy, in-situ UV-Vis spectroscopy, conductivity measurement, in-situ electrochemical quartz crystal microbalance, and differential scanning calorimetry were used to confirm and explain the switching memory phenomena. The OECT platform was used to validate the PEDOT:PTHF as a one-pot memory source-drain material where a threefold increase in drain current was observed between "off " and "on" mode of the transistor after modulation of the Ag/AgCl gate.
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UR - http://www.scopus.com/inward/citedby.url?scp=84908627935&partnerID=8YFLogxK
U2 - 10.1063/1.4900889
DO - 10.1063/1.4900889
M3 - Article
VL - 3
JO - APL Materials
JF - APL Materials
SN - 2166-532X
IS - 1
M1 - 014903
ER -