New performance indicators of metal-oxide-semiconductor field-effect transistors for high-frequency power-conscious design

Kosuke Katayama, Minoru Fujishima

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

With the progress of complementary metal-oxide-semiconductor (CMOS) process technology, it is possible to apply CMOS devices to millimeterwave amplifier design. However, the power consumption of the system becomes higher in proportion to its target frequency. Moreover, CMOS devices are biased at a point where the device achieves the highest gain and consumes much power. In order to reduce the power consumption without any compromise, we introduce two types of indicator. One works towards achieving the highest gain with the lowest power consumption. The other works towards achieving the highest linearity with consideration of the power consumption. In this work, we have shown the effectiveness of those indicators by applying measured data of the fabricated metal-oxide-semiconductor field-effect transistors (MOSFETs) to cascade common-source amplifiers.

Original languageEnglish
Article number02BC02
JournalJapanese Journal of Applied Physics
Volume51
Issue number2 PART 2
DOIs
Publication statusPublished - 2012 Feb
Externally publishedYes

Fingerprint

MOSFET devices
metal oxide semiconductors
Electric power utilization
field effect transistors
CMOS
MOS devices
high gain
semiconductor devices
amplifier design
linearity
proportion
cascades
amplifiers
Metals

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

New performance indicators of metal-oxide-semiconductor field-effect transistors for high-frequency power-conscious design. / Katayama, Kosuke; Fujishima, Minoru.

In: Japanese Journal of Applied Physics, Vol. 51, No. 2 PART 2, 02BC02, 02.2012.

Research output: Contribution to journalArticle

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