New perovskite nanomaterials and their integrations into high-k dielectrics

Minoru Osada; Takayoshi Sasaki

New perovskite nanomaterials and their integrations into high-k dielectrics

Minoru Osada, Takayoshi Sasaki

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report on a bottom-up manufacturing for high-k dielectric films using a novel nanomaterial, namely, a perovskite nanosheet (LaNb₂O ₇) derived from a layered perovskite by exfoliation. Solution-based layer-by-laver assembly of perovskite nanosheets is effective for room-temperature fabrication of high-k nanocapacitors, which are directly assembled on a SrRuO₃ bottom electrode with an atomically sharp interface. These nanocapacitors exhibit high dielectric constants (k > 50) for thichiess down to 5 nm while eliminating problems resulting from the size effect. We also investigate dielectric properties of perovskite nanosheets with different compositions (LaNb₂O₇, La_0.95Eu _0.05Nb₂O₇ and Eu_0.56Ta ₂O₇) in order to study the influence of A- and B-site modifications on dielectric properties.

Original language	English
Title of host publication	Proceedings - 2011 IMAPS/ACerS 7th International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2011
Pages	72-77
Number of pages	6
Publication status	Published - 2011
Externally published	Yes
Event	7th International Conference on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2011 - San Diego, CA, United States Duration: 2011 Apr 5 → 2011 Apr 7

Other

Other	7th International Conference on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2011
Country	United States
City	San Diego, CA
Period	11/4/5 → 11/4/7

Keywords

High-k dielectrics
Langmuir-blodgett deposition
Layer-by-layer assembly
Perovskite nanosheet

ASJC Scopus subject areas

Ceramics and Composites
Materials Chemistry

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Cite this

Osada, M & Sasaki, T 2011, New perovskite nanomaterials and their integrations into high-k dielectrics. in Proceedings - 2011 IMAPS/ACerS 7th International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2011. pp. 72-77, 7th International Conference on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2011, San Diego, CA, United States, 11/4/5.

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abstract = "We report on a bottom-up manufacturing for high-k dielectric films using a novel nanomaterial, namely, a perovskite nanosheet (LaNb2O 7) derived from a layered perovskite by exfoliation. Solution-based layer-by-laver assembly of perovskite nanosheets is effective for room-temperature fabrication of high-k nanocapacitors, which are directly assembled on a SrRuO3 bottom electrode with an atomically sharp interface. These nanocapacitors exhibit high dielectric constants (k > 50) for thichiess down to 5 nm while eliminating problems resulting from the size effect. We also investigate dielectric properties of perovskite nanosheets with different compositions (LaNb2O7, La0.95Eu 0.05Nb2O7 and Eu0.56Ta 2O7) in order to study the influence of A- and B-site modifications on dielectric properties.",

keywords = "High-k dielectrics, Langmuir-blodgett deposition, Layer-by-layer assembly, Perovskite nanosheet",

author = "Minoru Osada and Takayoshi Sasaki",

year = "2011",

language = "English",

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note = "7th International Conference on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2011 ; Conference date: 05-04-2011 Through 07-04-2011",

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AU - Osada, Minoru

AU - Sasaki, Takayoshi

PY - 2011

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N2 - We report on a bottom-up manufacturing for high-k dielectric films using a novel nanomaterial, namely, a perovskite nanosheet (LaNb2O 7) derived from a layered perovskite by exfoliation. Solution-based layer-by-laver assembly of perovskite nanosheets is effective for room-temperature fabrication of high-k nanocapacitors, which are directly assembled on a SrRuO3 bottom electrode with an atomically sharp interface. These nanocapacitors exhibit high dielectric constants (k > 50) for thichiess down to 5 nm while eliminating problems resulting from the size effect. We also investigate dielectric properties of perovskite nanosheets with different compositions (LaNb2O7, La0.95Eu 0.05Nb2O7 and Eu0.56Ta 2O7) in order to study the influence of A- and B-site modifications on dielectric properties.

AB - We report on a bottom-up manufacturing for high-k dielectric films using a novel nanomaterial, namely, a perovskite nanosheet (LaNb2O 7) derived from a layered perovskite by exfoliation. Solution-based layer-by-laver assembly of perovskite nanosheets is effective for room-temperature fabrication of high-k nanocapacitors, which are directly assembled on a SrRuO3 bottom electrode with an atomically sharp interface. These nanocapacitors exhibit high dielectric constants (k > 50) for thichiess down to 5 nm while eliminating problems resulting from the size effect. We also investigate dielectric properties of perovskite nanosheets with different compositions (LaNb2O7, La0.95Eu 0.05Nb2O7 and Eu0.56Ta 2O7) in order to study the influence of A- and B-site modifications on dielectric properties.

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