Abstract
We report on a bottom-up manufacturing for high-k dielectric films using a novel nanomaterial, namely, a perovskite nanosheet (LaNb2O 7) derived from a layered perovskite by exfoliation. Solution-based layer-by-laver assembly of perovskite nanosheets is effective for room-temperature fabrication of high-k nanocapacitors, which are directly assembled on a SrRuO3 bottom electrode with an atomically sharp interface. These nanocapacitors exhibit high dielectric constants (k > 50) for thichiess down to 5 nm while eliminating problems resulting from the size effect. We also investigate dielectric properties of perovskite nanosheets with different compositions (LaNb2O7, La0.95Eu 0.05Nb2O7 and Eu0.56Ta 2O7) in order to study the influence of A- and B-site modifications on dielectric properties.
| Original language | English |
|---|---|
| Title of host publication | Proceedings - 2011 IMAPS/ACerS 7th International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2011 |
| Pages | 72-77 |
| Number of pages | 6 |
| Publication status | Published - 2011 |
| Externally published | Yes |
| Event | 7th International Conference on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2011 - San Diego, CA, United States Duration: 2011 Apr 5 → 2011 Apr 7 |
Other
| Other | 7th International Conference on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2011 |
|---|---|
| Country | United States |
| City | San Diego, CA |
| Period | 11/4/5 → 11/4/7 |
Fingerprint
Keywords
- High-k dielectrics
- Langmuir-blodgett deposition
- Layer-by-layer assembly
- Perovskite nanosheet
ASJC Scopus subject areas
- Ceramics and Composites
- Materials Chemistry
Cite this
New perovskite nanomaterials and their integrations into high-k dielectrics. / Osada, Minoru; Sasaki, Takayoshi.
Proceedings - 2011 IMAPS/ACerS 7th International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2011. 2011. p. 72-77.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - New perovskite nanomaterials and their integrations into high-k dielectrics
AU - Osada, Minoru
AU - Sasaki, Takayoshi
PY - 2011
Y1 - 2011
N2 - We report on a bottom-up manufacturing for high-k dielectric films using a novel nanomaterial, namely, a perovskite nanosheet (LaNb2O 7) derived from a layered perovskite by exfoliation. Solution-based layer-by-laver assembly of perovskite nanosheets is effective for room-temperature fabrication of high-k nanocapacitors, which are directly assembled on a SrRuO3 bottom electrode with an atomically sharp interface. These nanocapacitors exhibit high dielectric constants (k > 50) for thichiess down to 5 nm while eliminating problems resulting from the size effect. We also investigate dielectric properties of perovskite nanosheets with different compositions (LaNb2O7, La0.95Eu 0.05Nb2O7 and Eu0.56Ta 2O7) in order to study the influence of A- and B-site modifications on dielectric properties.
AB - We report on a bottom-up manufacturing for high-k dielectric films using a novel nanomaterial, namely, a perovskite nanosheet (LaNb2O 7) derived from a layered perovskite by exfoliation. Solution-based layer-by-laver assembly of perovskite nanosheets is effective for room-temperature fabrication of high-k nanocapacitors, which are directly assembled on a SrRuO3 bottom electrode with an atomically sharp interface. These nanocapacitors exhibit high dielectric constants (k > 50) for thichiess down to 5 nm while eliminating problems resulting from the size effect. We also investigate dielectric properties of perovskite nanosheets with different compositions (LaNb2O7, La0.95Eu 0.05Nb2O7 and Eu0.56Ta 2O7) in order to study the influence of A- and B-site modifications on dielectric properties.
KW - High-k dielectrics
KW - Langmuir-blodgett deposition
KW - Layer-by-layer assembly
KW - Perovskite nanosheet
UR - http://www.scopus.com/inward/record.url?scp=84877757599&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84877757599&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84877757599
SN - 0930815920
SN - 9780930815929
SP - 72
EP - 77
BT - Proceedings - 2011 IMAPS/ACerS 7th International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2011
ER -