Abstract
A 4-Mb SRAM memory cell has been successfully developed by using four-level polysilicon and two-level aluminum process technologies. Self-aligned contact with the pad polysilicon, silicide formation, thin polysilicon layer for high resistance, and implanted buried barrier technology were used to realize a small memory cell area (3.5 μm × 5.3 μm), low standby current (
| Original language | English |
|---|---|
| Pages (from-to) | 61-62 |
| Number of pages | 2 |
| Journal | Unknown Journal |
| Publication status | Published - 1989 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
New process technology for a 4 Mbit SRAM with polysilicon load resistor cell. / Yuzuriha, K.; Ichinose, K.; Mukai, T.; Kohno, Y.; Shimizu, M.; Inuishi, Masahide; Matsukawa, T.
In: Unknown Journal, 1989, p. 61-62.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - New process technology for a 4 Mbit SRAM with polysilicon load resistor cell
AU - Yuzuriha, K.
AU - Ichinose, K.
AU - Mukai, T.
AU - Kohno, Y.
AU - Shimizu, M.
AU - Inuishi, Masahide
AU - Matsukawa, T.
PY - 1989
Y1 - 1989
N2 - A 4-Mb SRAM memory cell has been successfully developed by using four-level polysilicon and two-level aluminum process technologies. Self-aligned contact with the pad polysilicon, silicide formation, thin polysilicon layer for high resistance, and implanted buried barrier technology were used to realize a small memory cell area (3.5 μm × 5.3 μm), low standby current (
AB - A 4-Mb SRAM memory cell has been successfully developed by using four-level polysilicon and two-level aluminum process technologies. Self-aligned contact with the pad polysilicon, silicide formation, thin polysilicon layer for high resistance, and implanted buried barrier technology were used to realize a small memory cell area (3.5 μm × 5.3 μm), low standby current (
UR - http://www.scopus.com/inward/record.url?scp=0024906248&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0024906248&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0024906248
SP - 61
EP - 62
JO - Nuclear Physics A
JF - Nuclear Physics A
SN - 0375-9474
ER -