New process technology for a 4 Mbit SRAM with polysilicon load resistor cell

K. Yuzuriha, K. Ichinose, T. Mukai, Y. Kohno, M. Shimizu, Masahide Inuishi, T. Matsukawa

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A 4-Mb SRAM memory cell has been successfully developed by using four-level polysilicon and two-level aluminum process technologies. Self-aligned contact with the pad polysilicon, silicide formation, thin polysilicon layer for high resistance, and implanted buried barrier technology were used to realize a small memory cell area (3.5 μm × 5.3 μm), low standby current (

Original languageEnglish
Pages (from-to)61-62
Number of pages2
JournalUnknown Journal
Publication statusPublished - 1989
Externally publishedYes

Fingerprint

Static random access storage
Polysilicon
resistors
Resistors
high resistance
low currents
cells
Data storage equipment
electric contacts
aluminum
Aluminum

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Yuzuriha, K., Ichinose, K., Mukai, T., Kohno, Y., Shimizu, M., Inuishi, M., & Matsukawa, T. (1989). New process technology for a 4 Mbit SRAM with polysilicon load resistor cell. Unknown Journal, 61-62.

New process technology for a 4 Mbit SRAM with polysilicon load resistor cell. / Yuzuriha, K.; Ichinose, K.; Mukai, T.; Kohno, Y.; Shimizu, M.; Inuishi, Masahide; Matsukawa, T.

In: Unknown Journal, 1989, p. 61-62.

Research output: Contribution to journalArticle

Yuzuriha, K, Ichinose, K, Mukai, T, Kohno, Y, Shimizu, M, Inuishi, M & Matsukawa, T 1989, 'New process technology for a 4 Mbit SRAM with polysilicon load resistor cell', Unknown Journal, pp. 61-62.
Yuzuriha K, Ichinose K, Mukai T, Kohno Y, Shimizu M, Inuishi M et al. New process technology for a 4 Mbit SRAM with polysilicon load resistor cell. Unknown Journal. 1989;61-62.
Yuzuriha, K. ; Ichinose, K. ; Mukai, T. ; Kohno, Y. ; Shimizu, M. ; Inuishi, Masahide ; Matsukawa, T. / New process technology for a 4 Mbit SRAM with polysilicon load resistor cell. In: Unknown Journal. 1989 ; pp. 61-62.
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