NEW TYPE InGaAs/InP HETEROSTRUCTURE AVALANCHE PHOTODIODE WITH BUFFER LAYER.

Yuichi Matsushima, K. Sakai, Y. Noda

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

A new type heterostructure avalanche photodiode (HAPD) is proposed and successfully fabricated by liquid phase epitaxy and Zn-diffusion. The HAPD has been made from a successively grown wafer which consists of In//0//. //5//3Ga//0//. //4//7As light absorption layer, InGaAsP buffer layers and InP avalanche multiplication layer on n-InP substrate. Dark current density of 1 multiplied by 10** minus **4Acm** minus **2 at 0. 9 V//B is achieved. When illuminating with 1. 15 mu m light, the diode has a maximum multiplication gain of 880 and an external quantum efficiency of 40%. The quantum efficiency is markedly improved than that of previously reported HAPD.

Original languageEnglish
Pages (from-to)179-181
Number of pages3
JournalElectron device letters
VolumeEDL-2
Issue number7
Publication statusPublished - 1981 Jul
Externally publishedYes

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Avalanche photodiodes
Buffer layers
Heterojunctions
Quantum efficiency
Liquid phase epitaxy
Dark currents
Light absorption
Diodes
Current density
Substrates

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Matsushima, Y., Sakai, K., & Noda, Y. (1981). NEW TYPE InGaAs/InP HETEROSTRUCTURE AVALANCHE PHOTODIODE WITH BUFFER LAYER. Electron device letters, EDL-2(7), 179-181.

NEW TYPE InGaAs/InP HETEROSTRUCTURE AVALANCHE PHOTODIODE WITH BUFFER LAYER. / Matsushima, Yuichi; Sakai, K.; Noda, Y.

In: Electron device letters, Vol. EDL-2, No. 7, 07.1981, p. 179-181.

Research output: Contribution to journalArticle

Matsushima, Y, Sakai, K & Noda, Y 1981, 'NEW TYPE InGaAs/InP HETEROSTRUCTURE AVALANCHE PHOTODIODE WITH BUFFER LAYER.', Electron device letters, vol. EDL-2, no. 7, pp. 179-181.
Matsushima, Yuichi ; Sakai, K. ; Noda, Y. / NEW TYPE InGaAs/InP HETEROSTRUCTURE AVALANCHE PHOTODIODE WITH BUFFER LAYER. In: Electron device letters. 1981 ; Vol. EDL-2, No. 7. pp. 179-181.
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