Ni Impurity Effect on the Transport Properties and Carrier Concentration of Bi2212

Yuta Kiguchi, Takuya Nakazawa, Azusa Matsuda

    Research output: Contribution to journalConference article

    1 Citation (Scopus)

    Abstract

    In typical hole-doped high-Tc cuprates, the optimum doping is achieved at the doping level p ∼ 0.16 (= p opt ). However impurity dopings sometimes alters p opt value. In this sense, p opt ∼ 0.16 is thought not to be universal. Here, we studied the doping dependence of T c and some transport characteristics for several Ni impurity doped Bi 2 Sr 2 CaCu 2 O 8+δ single crystals. Doping levels were precisely determined by thermoelectric measurements and oxygen contents δ. We found that 1. Ni valence is almost same as Cu, 2. p opt shifts toward higher doping, 3. pseudogap opening temperature T is not affected by Ni impurity. The results are consistent with the model that the shift in p opt is due to the doping dependent pair breaking effect. This means that the shift is superficial and the essential universality p opt ∼ 0.16 is impurity doped regime.

    Original languageEnglish
    Pages (from-to)54-57
    Number of pages4
    JournalPhysics Procedia
    Volume58
    DOIs
    Publication statusPublished - 2013 Jan 1
    Event26th International Symposium on Superconductivity, ISS 2013 - Tokyo, Japan
    Duration: 2013 Nov 182013 Nov 20

    Fingerprint

    transport properties
    impurities
    shift
    cuprates
    valence
    single crystals
    oxygen
    temperature

    Keywords

    • Bi2212
    • Cuprate superdonductor
    • Impurity effect
    • Resistivity
    • Thermoelectric power

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

    Cite this

    Ni Impurity Effect on the Transport Properties and Carrier Concentration of Bi2212. / Kiguchi, Yuta; Nakazawa, Takuya; Matsuda, Azusa.

    In: Physics Procedia, Vol. 58, 01.01.2013, p. 54-57.

    Research output: Contribution to journalConference article

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    AU - Matsuda, Azusa

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    N2 - In typical hole-doped high-Tc cuprates, the optimum doping is achieved at the doping level p ∼ 0.16 (= p opt ). However impurity dopings sometimes alters p opt value. In this sense, p opt ∼ 0.16 is thought not to be universal. Here, we studied the doping dependence of T c and some transport characteristics for several Ni impurity doped Bi 2 Sr 2 CaCu 2 O 8+δ single crystals. Doping levels were precisely determined by thermoelectric measurements and oxygen contents δ. We found that 1. Ni valence is almost same as Cu, 2. p opt shifts toward higher doping, 3. pseudogap opening temperature T ∗ is not affected by Ni impurity. The results are consistent with the model that the shift in p opt is due to the doping dependent pair breaking effect. This means that the shift is superficial and the essential universality p opt ∼ 0.16 is impurity doped regime.

    AB - In typical hole-doped high-Tc cuprates, the optimum doping is achieved at the doping level p ∼ 0.16 (= p opt ). However impurity dopings sometimes alters p opt value. In this sense, p opt ∼ 0.16 is thought not to be universal. Here, we studied the doping dependence of T c and some transport characteristics for several Ni impurity doped Bi 2 Sr 2 CaCu 2 O 8+δ single crystals. Doping levels were precisely determined by thermoelectric measurements and oxygen contents δ. We found that 1. Ni valence is almost same as Cu, 2. p opt shifts toward higher doping, 3. pseudogap opening temperature T ∗ is not affected by Ni impurity. The results are consistent with the model that the shift in p opt is due to the doping dependent pair breaking effect. This means that the shift is superficial and the essential universality p opt ∼ 0.16 is impurity doped regime.

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