Nitridation of GaAs surfaces using nitrogen molecules cracked by a hot tungsten filament

Toshiki Makimoto, Naoki Kobayashi

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We performed the nitridation of (001) GaAs surfaces using nitrogen molecules (N2) cracked by a hot tungsten filament. After nitridation of a GaAs surface at 620°C for 90 min, the [110] RHEED pattern shows the mixed spotty pattern of GaAs and GaN, while the [110] RHEED pattern shows a streak pattern with the spacing of a GaAs lattice. The nitridation rate is independent of the substrate temperature below 530°C. Above 590°C, N2 desorbs from the surface during nitridation. This desorption rate of N2 from the nitrided GaAs surface is the smallest among those of column V molecules in InAs, InP, GaAs and GaP, due to the large standard heat of formation for GaN.

Original languageEnglish
Pages (from-to)403-406
Number of pages4
JournalApplied Surface Science
Volume100-101
DOIs
Publication statusPublished - 1996 Jul
Externally publishedYes

Fingerprint

Tungsten
Nitridation
filaments
tungsten
Nitrogen
nitrogen
Reflection high energy electron diffraction
Molecules
molecules
heat of formation
Desorption
desorption
spacing
gallium arsenide
Substrates
Temperature
temperature

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Nitridation of GaAs surfaces using nitrogen molecules cracked by a hot tungsten filament. / Makimoto, Toshiki; Kobayashi, Naoki.

In: Applied Surface Science, Vol. 100-101, 07.1996, p. 403-406.

Research output: Contribution to journalArticle

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