Nitridation of GaAs surfaces using nitrogen molecules cracked by a hot tungsten filament

Toshiki Makimoto; Naoki Kobayashi

doi:10.1016/0169-4332(96)00308-X

Nitridation of GaAs surfaces using nitrogen molecules cracked by a hot tungsten filament

Toshiki Makimoto^*, Naoki Kobayashi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We performed the nitridation of (001) GaAs surfaces using nitrogen molecules (N ₂ ) cracked by a hot tungsten filament. After nitridation of a GaAs surface at 620°C for 90 min, the [110] RHEED pattern shows the mixed spotty pattern of GaAs and GaN, while the [110] RHEED pattern shows a streak pattern with the spacing of a GaAs lattice. The nitridation rate is independent of the substrate temperature below 530°C. Above 590°C, N ₂ desorbs from the surface during nitridation. This desorption rate of N ₂ from the nitrided GaAs surface is the smallest among those of column V molecules in InAs, InP, GaAs and GaP, due to the large standard heat of formation for GaN.

Original language	English
Pages (from-to)	403-406
Number of pages	4
Journal	Applied Surface Science
Volume	100-101
DOIs	https://doi.org/10.1016/0169-4332(96)00308-X
Publication status	Published - 1996 Jul
Externally published	Yes

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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title = "Nitridation of GaAs surfaces using nitrogen molecules cracked by a hot tungsten filament",

abstract = " We performed the nitridation of (001) GaAs surfaces using nitrogen molecules (N 2 ) cracked by a hot tungsten filament. After nitridation of a GaAs surface at 620°C for 90 min, the [110] RHEED pattern shows the mixed spotty pattern of GaAs and GaN, while the [110] RHEED pattern shows a streak pattern with the spacing of a GaAs lattice. The nitridation rate is independent of the substrate temperature below 530°C. Above 590°C, N 2 desorbs from the surface during nitridation. This desorption rate of N 2 from the nitrided GaAs surface is the smallest among those of column V molecules in InAs, InP, GaAs and GaP, due to the large standard heat of formation for GaN. ",

author = "Toshiki Makimoto and Naoki Kobayashi",

year = "1996",

month = jul,

doi = "10.1016/0169-4332(96)00308-X",

language = "English",

volume = "100-101",

pages = "403--406",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

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TY - JOUR

T1 - Nitridation of GaAs surfaces using nitrogen molecules cracked by a hot tungsten filament

AU - Makimoto, Toshiki

AU - Kobayashi, Naoki

PY - 1996/7

Y1 - 1996/7

N2 - We performed the nitridation of (001) GaAs surfaces using nitrogen molecules (N 2 ) cracked by a hot tungsten filament. After nitridation of a GaAs surface at 620°C for 90 min, the [110] RHEED pattern shows the mixed spotty pattern of GaAs and GaN, while the [110] RHEED pattern shows a streak pattern with the spacing of a GaAs lattice. The nitridation rate is independent of the substrate temperature below 530°C. Above 590°C, N 2 desorbs from the surface during nitridation. This desorption rate of N 2 from the nitrided GaAs surface is the smallest among those of column V molecules in InAs, InP, GaAs and GaP, due to the large standard heat of formation for GaN.

AB - We performed the nitridation of (001) GaAs surfaces using nitrogen molecules (N 2 ) cracked by a hot tungsten filament. After nitridation of a GaAs surface at 620°C for 90 min, the [110] RHEED pattern shows the mixed spotty pattern of GaAs and GaN, while the [110] RHEED pattern shows a streak pattern with the spacing of a GaAs lattice. The nitridation rate is independent of the substrate temperature below 530°C. Above 590°C, N 2 desorbs from the surface during nitridation. This desorption rate of N 2 from the nitrided GaAs surface is the smallest among those of column V molecules in InAs, InP, GaAs and GaP, due to the large standard heat of formation for GaN.

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DO - 10.1016/0169-4332(96)00308-X

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JO - Applied Surface Science

JF - Applied Surface Science

ER -

Nitridation of GaAs surfaces using nitrogen molecules cracked by a hot tungsten filament

Abstract

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