Nitridation of GaAs surfaces using nitrogen molecules cracked by a hot tungsten filament

Toshiki Makimoto*, Naoki Kobayashi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


We performed the nitridation of (001) GaAs surfaces using nitrogen molecules (N 2 ) cracked by a hot tungsten filament. After nitridation of a GaAs surface at 620°C for 90 min, the [110] RHEED pattern shows the mixed spotty pattern of GaAs and GaN, while the [110] RHEED pattern shows a streak pattern with the spacing of a GaAs lattice. The nitridation rate is independent of the substrate temperature below 530°C. Above 590°C, N 2 desorbs from the surface during nitridation. This desorption rate of N 2 from the nitrided GaAs surface is the smallest among those of column V molecules in InAs, InP, GaAs and GaP, due to the large standard heat of formation for GaN.

Original languageEnglish
Pages (from-to)403-406
Number of pages4
JournalApplied Surface Science
Publication statusPublished - 1996 Jul
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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