Nitridation of GaAs surfaces using nitrogen through a hot tungsten filament

Toshiki Makimoto; Naoki Kobayashi

doi:10.1063/1.115184

Nitridation of GaAs surfaces using nitrogen through a hot tungsten filament

Toshiki Makimoto^*, Naoki Kobayashi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

This letter reports the nitridation of GaAs surfaces using N₂ through a hot tungsten filament. After nitridation, GaAs cap layers were grown by molecular beam epitaxy to form GaAs/GaN/GaAs structures. For these structures, we determine the sheet nitrogen atom concentration by secondary ion mass spectrometry analysis. The sheet nitrogen atom concentration is proportional to the square root of the N₂ pressure, indicating that N₂ molecules are decomposed into nitrogen atoms to adsorb on the GaAs surfaces. The activation energy of this decomposition process is 3.6±0.4 eV.

Original language	English
Pages (from-to)	548
Number of pages	1
Journal	Applied Physics Letters
Volume	67
DOIs	https://doi.org/10.1063/1.115184
Publication status	Published - 1995
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.115184

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title = "Nitridation of GaAs surfaces using nitrogen through a hot tungsten filament",

abstract = "This letter reports the nitridation of GaAs surfaces using N2 through a hot tungsten filament. After nitridation, GaAs cap layers were grown by molecular beam epitaxy to form GaAs/GaN/GaAs structures. For these structures, we determine the sheet nitrogen atom concentration by secondary ion mass spectrometry analysis. The sheet nitrogen atom concentration is proportional to the square root of the N2 pressure, indicating that N2 molecules are decomposed into nitrogen atoms to adsorb on the GaAs surfaces. The activation energy of this decomposition process is 3.6±0.4 eV.",

author = "Toshiki Makimoto and Naoki Kobayashi",

year = "1995",

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pages = "548",

journal = "Applied Physics Letters",

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AU - Makimoto, Toshiki

AU - Kobayashi, Naoki

PY - 1995

Y1 - 1995

N2 - This letter reports the nitridation of GaAs surfaces using N2 through a hot tungsten filament. After nitridation, GaAs cap layers were grown by molecular beam epitaxy to form GaAs/GaN/GaAs structures. For these structures, we determine the sheet nitrogen atom concentration by secondary ion mass spectrometry analysis. The sheet nitrogen atom concentration is proportional to the square root of the N2 pressure, indicating that N2 molecules are decomposed into nitrogen atoms to adsorb on the GaAs surfaces. The activation energy of this decomposition process is 3.6±0.4 eV.

AB - This letter reports the nitridation of GaAs surfaces using N2 through a hot tungsten filament. After nitridation, GaAs cap layers were grown by molecular beam epitaxy to form GaAs/GaN/GaAs structures. For these structures, we determine the sheet nitrogen atom concentration by secondary ion mass spectrometry analysis. The sheet nitrogen atom concentration is proportional to the square root of the N2 pressure, indicating that N2 molecules are decomposed into nitrogen atoms to adsorb on the GaAs surfaces. The activation energy of this decomposition process is 3.6±0.4 eV.

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DO - 10.1063/1.115184

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JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Nitridation of GaAs surfaces using nitrogen through a hot tungsten filament

Abstract

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