Nitridation of GaAs surfaces using nitrogen through a hot tungsten filament

Toshiki Makimoto*, Naoki Kobayashi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

38 Citations (Scopus)


This letter reports the nitridation of GaAs surfaces using N2 through a hot tungsten filament. After nitridation, GaAs cap layers were grown by molecular beam epitaxy to form GaAs/GaN/GaAs structures. For these structures, we determine the sheet nitrogen atom concentration by secondary ion mass spectrometry analysis. The sheet nitrogen atom concentration is proportional to the square root of the N2 pressure, indicating that N2 molecules are decomposed into nitrogen atoms to adsorb on the GaAs surfaces. The activation energy of this decomposition process is 3.6±0.4 eV.

Original languageEnglish
Pages (from-to)548
Number of pages1
JournalApplied Physics Letters
Publication statusPublished - 1995
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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