Nitridation of GaAs surfaces using nitrogen through a hot tungsten filament

Toshiki Makimoto, Naoki Kobayashi

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

This letter reports the nitridation of GaAs surfaces using N2 through a hot tungsten filament. After nitridation, GaAs cap layers were grown by molecular beam epitaxy to form GaAs/GaN/GaAs structures. For these structures, we determine the sheet nitrogen atom concentration by secondary ion mass spectrometry analysis. The sheet nitrogen atom concentration is proportional to the square root of the N2 pressure, indicating that N2 molecules are decomposed into nitrogen atoms to adsorb on the GaAs surfaces. The activation energy of this decomposition process is 3.6±0.4 eV.

Original languageEnglish
Pages (from-to)548
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
Publication statusPublished - 1995
Externally publishedYes

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nitrogen atoms
atom concentration
filaments
tungsten
nitrogen
caps
secondary ion mass spectrometry
molecular beam epitaxy
activation energy
decomposition
molecules

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Nitridation of GaAs surfaces using nitrogen through a hot tungsten filament. / Makimoto, Toshiki; Kobayashi, Naoki.

In: Applied Physics Letters, Vol. 67, 1995, p. 548.

Research output: Contribution to journalArticle

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