Abstract
The nitrogen doping behavior of 4H-SiC was investigated by the top-seeded solution growth technique using Si-Ti solvent. Growth experiments were performed under a mixed gas of helium and nitrogen at atmospheric pressure at 1940°C, in which nitrogen content ranged between 0.17 and 0.5 vol%. The electrical property and structural quality of nitrogen-doped crystals were examined. The nitrogen doping level increased with the increase of nitrogen content in the growth furnace. The most heavily nitrogen-doped SiC with a concentration of 1.1×1020 cm-3 was obtained; however, stacking faults (SFs) were abruptly generated above a nitrogen concentration of 3.0×1019 cm-3. The lowest resistivity of approximately 0.010 Ω cm was obtained with SFs-free. Based on the both undoped and nitrogen-doped growth experimental results, the nitrogen incorporation behavior by employing our solution growth technique was discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 60-65 |
| Number of pages | 6 |
| Journal | Journal of Crystal Growth |
| Volume | 392 |
| DOIs | |
| Publication status | Published - 2014 Apr 15 |
| Externally published | Yes |
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Keywords
- A1. Doping
- A1. Solvents
- A2. Growth from solutions
- A2. Top seeded solution growth
- B1. Inorganic compounds
- B2. Semiconducting silicon compounds
ASJC Scopus subject areas
- Condensed Matter Physics
- Materials Chemistry
- Inorganic Chemistry
Cite this
Nitrogen doping of 4H-SiC by the top-seeded solution growth technique using Si-Ti solvent. / Kusunoki, Kazuhiko; Kamei, Kazuhito; Seki, Kazuaki; Harada, Shunta; Ujihara, Toru.
In: Journal of Crystal Growth, Vol. 392, 15.04.2014, p. 60-65.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Nitrogen doping of 4H-SiC by the top-seeded solution growth technique using Si-Ti solvent
AU - Kusunoki, Kazuhiko
AU - Kamei, Kazuhito
AU - Seki, Kazuaki
AU - Harada, Shunta
AU - Ujihara, Toru
PY - 2014/4/15
Y1 - 2014/4/15
N2 - The nitrogen doping behavior of 4H-SiC was investigated by the top-seeded solution growth technique using Si-Ti solvent. Growth experiments were performed under a mixed gas of helium and nitrogen at atmospheric pressure at 1940°C, in which nitrogen content ranged between 0.17 and 0.5 vol%. The electrical property and structural quality of nitrogen-doped crystals were examined. The nitrogen doping level increased with the increase of nitrogen content in the growth furnace. The most heavily nitrogen-doped SiC with a concentration of 1.1×1020 cm-3 was obtained; however, stacking faults (SFs) were abruptly generated above a nitrogen concentration of 3.0×1019 cm-3. The lowest resistivity of approximately 0.010 Ω cm was obtained with SFs-free. Based on the both undoped and nitrogen-doped growth experimental results, the nitrogen incorporation behavior by employing our solution growth technique was discussed.
AB - The nitrogen doping behavior of 4H-SiC was investigated by the top-seeded solution growth technique using Si-Ti solvent. Growth experiments were performed under a mixed gas of helium and nitrogen at atmospheric pressure at 1940°C, in which nitrogen content ranged between 0.17 and 0.5 vol%. The electrical property and structural quality of nitrogen-doped crystals were examined. The nitrogen doping level increased with the increase of nitrogen content in the growth furnace. The most heavily nitrogen-doped SiC with a concentration of 1.1×1020 cm-3 was obtained; however, stacking faults (SFs) were abruptly generated above a nitrogen concentration of 3.0×1019 cm-3. The lowest resistivity of approximately 0.010 Ω cm was obtained with SFs-free. Based on the both undoped and nitrogen-doped growth experimental results, the nitrogen incorporation behavior by employing our solution growth technique was discussed.
KW - A1. Doping
KW - A1. Solvents
KW - A2. Growth from solutions
KW - A2. Top seeded solution growth
KW - B1. Inorganic compounds
KW - B2. Semiconducting silicon compounds
UR - http://www.scopus.com/inward/record.url?scp=84894467346&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84894467346&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2014.01.044
DO - 10.1016/j.jcrysgro.2014.01.044
M3 - Article
AN - SCOPUS:84894467346
VL - 392
SP - 60
EP - 65
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
ER -