Abstract
The nitrogen doping behavior of 4H-SiC was investigated by the top-seeded solution growth technique using Si-Ti solvent. Growth experiments were performed under a mixed gas of helium and nitrogen at atmospheric pressure at 1940°C, in which nitrogen content ranged between 0.17 and 0.5 vol%. The electrical property and structural quality of nitrogen-doped crystals were examined. The nitrogen doping level increased with the increase of nitrogen content in the growth furnace. The most heavily nitrogen-doped SiC with a concentration of 1.1×1020 cm-3 was obtained; however, stacking faults (SFs) were abruptly generated above a nitrogen concentration of 3.0×1019 cm-3. The lowest resistivity of approximately 0.010 Ω cm was obtained with SFs-free. Based on the both undoped and nitrogen-doped growth experimental results, the nitrogen incorporation behavior by employing our solution growth technique was discussed.
Original language | English |
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Pages (from-to) | 60-65 |
Number of pages | 6 |
Journal | Journal of Crystal Growth |
Volume | 392 |
DOIs | |
Publication status | Published - 2014 Apr 15 |
Externally published | Yes |
Keywords
- A1. Doping
- A1. Solvents
- A2. Growth from solutions
- A2. Top seeded solution growth
- B1. Inorganic compounds
- B2. Semiconducting silicon compounds
ASJC Scopus subject areas
- Condensed Matter Physics
- Materials Chemistry
- Inorganic Chemistry