Nitrogen doping of 4H-SiC by the top-seeded solution growth technique using Si-Ti solvent

Kazuhiko Kusunoki, Kazuhito Kamei, Kazuaki Seki, Shunta Harada, Toru Ujihara

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

The nitrogen doping behavior of 4H-SiC was investigated by the top-seeded solution growth technique using Si-Ti solvent. Growth experiments were performed under a mixed gas of helium and nitrogen at atmospheric pressure at 1940°C, in which nitrogen content ranged between 0.17 and 0.5 vol%. The electrical property and structural quality of nitrogen-doped crystals were examined. The nitrogen doping level increased with the increase of nitrogen content in the growth furnace. The most heavily nitrogen-doped SiC with a concentration of 1.1×1020 cm-3 was obtained; however, stacking faults (SFs) were abruptly generated above a nitrogen concentration of 3.0×1019 cm-3. The lowest resistivity of approximately 0.010 Ω cm was obtained with SFs-free. Based on the both undoped and nitrogen-doped growth experimental results, the nitrogen incorporation behavior by employing our solution growth technique was discussed.

Original languageEnglish
Pages (from-to)60-65
Number of pages6
JournalJournal of Crystal Growth
Volume392
DOIs
Publication statusPublished - 2014 Apr 15
Externally publishedYes

Fingerprint

Nitrogen
Doping (additives)
nitrogen
Stacking faults
crystal defects
Helium
doped crystals
Atmospheric pressure
furnaces
atmospheric pressure
Electric properties
Furnaces
Gases
helium
electrical properties
Crystals
electrical resistivity
gases

Keywords

  • A1. Doping
  • A1. Solvents
  • A2. Growth from solutions
  • A2. Top seeded solution growth
  • B1. Inorganic compounds
  • B2. Semiconducting silicon compounds

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Nitrogen doping of 4H-SiC by the top-seeded solution growth technique using Si-Ti solvent. / Kusunoki, Kazuhiko; Kamei, Kazuhito; Seki, Kazuaki; Harada, Shunta; Ujihara, Toru.

In: Journal of Crystal Growth, Vol. 392, 15.04.2014, p. 60-65.

Research output: Contribution to journalArticle

Kusunoki, Kazuhiko ; Kamei, Kazuhito ; Seki, Kazuaki ; Harada, Shunta ; Ujihara, Toru. / Nitrogen doping of 4H-SiC by the top-seeded solution growth technique using Si-Ti solvent. In: Journal of Crystal Growth. 2014 ; Vol. 392. pp. 60-65.
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